Semiconductor device with bioFET and biometric sensors
The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.
1. A method for fabricating a semiconductor device, comprising:
forming a gate electrode on a first side of a semiconductor substrate;
forming a channel region between source and drain regions within the semiconductor substrate;
forming a piezoelectric sensor region with a piezoelectric material on a second side of the semiconductor substrate, wherein the second side is substantially parallel and opposite to the first side;
forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region;
forming a sensing well on the channel region; and
binding capture reagents on the sensing well.
2. The method of claim 1 , wherein the forming the piezoelectric sensor region comprises:
depositing an isolation layer on the second side;
depositing a first electrode on the isolation layer;
depositing the piezoelectric material on the first electrode; and
depositing a second electrode on the piezoelectric material.
3. The method of claim 1 , wherein the forming the piezoelectric sensor region comprises forming an array of piezoelectric sensor regions with the piezoelectric material.
4. The method of claim 1 , wherein the forming the piezoelectric sensor region comprises:
depositing a first electrode on the second side;
forming an array of piezoelectric regions with the piezoelectric material on the first electrode; and
depositing an insulating layer between adjacent piezoelectric regions of the array of piezoelectric regions.
5. The method of claim 1 , wherein the forming the piezoelectric sensor region comprises:
depositing a layer of conductive material on the second side; and
etching the layer of conductive material to simultaneously form a bottom electrode of the piezoelectric sensor region on a first region of the second side and the temperature sensing electrode on a second region of the second side.
6. The method of claim 1 , wherein the forming the sensing well comprises:
depositing an isolation layer on the second side;
etching a portion of the isolation layer overlying the channel region to form an opening on the channel region;
blanket depositing an insulating layer on the isolation layer, the channel region, and sidewalls of the opening; and
etching the insulating layer to simultaneously form the sensing well on a first region of the second side and a sensing layer on a second region of the second side.
7. The method of claim 1 , further comprising depositing a coupling layer on the piezoelectric sensor region.
8. The method of claim 1 , further comprising forming a contact opening between the piezoelectric sensor region and the sensing well after the forming of the piezoelectric sensor region and the sensing well.
9. The method of claim 1 , further comprising:
forming an interconnect structure prior to the forming of the piezoelectric sensor region and the sensing well; and
forming a contact opening on the interconnect structure and between the piezoelectric sensor region and the sensing well after the forming of the piezoelectric sensor region and the sensing well.
10. The method of claim 1 , further comprising forming an interconnect structure prior to the forming of the piezoelectric sensor region and the sensing well; and
forming a heater during the forming of the interconnect structure.
11. A method for fabricating a semiconductor device, comprising:
forming a bioFET sensor on a carrier substrate, wherein the forming the bioFET sensor comprises:
forming a gate electrode on a first side of a semiconductor substrate disposed on the carrier substrate, and
forming a channel region between source and drain regions within the semiconductor substrate; and
forming a biometric sensor on the carrier substrate, wherein the forming the biometric sensor comprises:
forming a piezoelectric sensor region with a piezoelectric material on a second side of the semiconductor substrate, wherein the second side is substantially parallel and opposite to the first side; and
depositing a sensing layer on the piezoelectric sensor region.
12. The method of claim 11 , further comprising simultaneously forming a temperature sensor electrode on a first region of the second side and a bottom electrode of the piezoelectric sensor region on a second region of the second side.
13. The method of claim 11 , further comprising simultaneously forming the sensing layer on a first region of the second side and a sensing well of the bioFET sensor on a second region of the second side.
14. The method of claim 11 , wherein the forming the piezoelectric sensor region comprises forming an array of piezoelectric sensor regions with the piezoelectric material.
15. The method of claim 11 , wherein the forming the piezoelectric sensor region comprises:
depositing a first electrode on the second side;
depositing an array of piezoelectric regions with the piezoelectric material on the first electrode; and
depositing an array of second electrodes on the array of piezoelectric regions.
16. The method of claim 15 , wherein the forming the biometric sensor comprises:
coupling the first electrode to a ground voltage; and
coupling the array of second electrodes to an array of voltage sources.
17. A method, comprising:
forming a gate electrode on a first side of a semiconductor substrate;
forming source and drain regions within the semiconductor substrate with a channel region disposed between the source and drain regions;
forming a piezoelectric sensor region with a piezoelectric material on a second side of the semiconductor substrate, wherein the second side is substantially parallel and opposite to the first side; and
depositing a sensing layer on the piezoelectric sensor region.
18. The method of claim 17 , further comprising forming a contact region within the semiconductor substrate between the piezoelectric sensor region and the gate electrode.
19. The method of claim 17 , further comprising forming an array of cavities under the piezoelectric sensor region.
20. The method of claim 17 , wherein the forming the piezoelectric sensor region comprises forming an array of fingerprint sensing regions.