Semiconductor device with bioFET and biometric sensors
The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.
1. A semiconductor device, comprising:
a substrate;
a gate electrode disposed on a first side of the substrate;
source and drain regions disposed within the substrate;
a channel region disposed between the source and drain regions;
a piezoelectric sensor disposed on a second side of the substrate, wherein the second side of the substrate is substantially parallel and opposite to the first side of the substrate; and
a temperature sensor disposed on the second side of the substrate.
2. The semiconductor device of claim 1 , wherein the piezoelectric sensor comprises:
a first electrode disposed on the second side of the substrate;
a piezoelectric material layer disposed on the first electrode; and
a second electrode disposed on the piezoelectric material layer.
3. The semiconductor device of claim 1 , wherein the piezoelectric sensor comprises an array of piezoelectric sensor regions.
4. The semiconductor device of claim 1 , wherein the piezoelectric sensor comprises:
an isolation layer disposed on the second side of the substrate; and
a piezoelectric material layer disposed on the isolation layer.
5. The semiconductor device of claim 1 , wherein the temperature sensor comprises a sensing electrode disposed on the second side of the substrate.
6. The semiconductor device of claim 1 , further comprising a sensing well with capture reagents disposed on the channel region.
7. The semiconductor device of claim 1 , further comprising a coupling layer disposed on the piezoelectric sensor.
8. The semiconductor device of claim 1 , further comprising a cover plate disposed on the piezoelectric sensor.
9. The semiconductor device of claim 1 , further comprising an array of resonators under the piezoelectric sensor.
10. The semiconductor device of claim 1 , further comprising a resistive heater disposed on the first side of the substrate.
11. A semiconductor device, comprising:
a substrate;
a bioFET sensor, comprising:
a gate electrode disposed on a first side of the substrate, and
a channel region disposed between source and drain regions within the substrate; and
a biometric sensor, comprising:
an array of piezoelectric sensor regions disposed over a second side of the substrate, wherein the second side of the substrate is substantially parallel and opposite to the first side of the substrate; and
a sensing layer disposed on the array of piezoelectric sensor regions.
12. The semiconductor device of claim 11 , further comprising a temperature sensor electrode disposed over the second side of the substrate.
13. The semiconductor device of claim 12 , further comprising an insulating layer disposed on the second side of the substrate, wherein the temperature sensor electrode is disposed on a first portion of the insulating layer and the array of piezoelectric sensor regions are disposed on a second portion of the insulating layer.
14. The semiconductor device of claim 13 , wherein the first and second portions of the insulating layer are separated from each other by the bioFET sensor.
15. The semiconductor device of claim 11 , wherein the array of piezoelectric sensor regions comprises:
an array of first electrodes disposed on the second side of the substrate;
an array of piezoelectric material layers disposed on the array of first electrodes; and
an array of second electrodes disposed on the array of piezoelectric material layers.
16. The semiconductor device of claim 11 , wherein the bioFET sensor comprises a sensing well with capture reagents disposed on the channel region.
17. A semiconductor device, comprising:
a gate electrode disposed on a first side of a semiconductor substrate;
a channel region disposed between source and drain regions within the semiconductor substrate;
a piezoelectric sensor region disposed on a second side of the semiconductor substrate, wherein the second side is substantially parallel and opposite to the first side;
a temperature sensing electrode disposed on the second side of the semiconductor substrate;
a sensing well disposed on the channel region; and
capture reagents bound to the sensing well.
18. The semiconductor device of claim 17 , further comprising a contact opening between the piezoelectric sensor region and the sensing well.
19. The semiconductor device of claim 17 , further comprising an array of cavities under the piezoelectric sensor region.
20. The semiconductor device of claim 17 , wherein the piezoelectric sensor region comprises an array of piezoelectric sensor regions configured to detect a fingerprint pattern.