Semiconductor device and selective heating thereof
One or more semiconductor devices and array arrangements and methods of formation are provided. A semiconductor device includes an ion sensing device and a heating element proximate the ion sensing device. The ion sensing device has an active region, including a source, a drain, and a channel, the channel situated between the source and the drain. The ion sensing device also has an ion sensing film situated over the channel, and an ion sensing region over the ion sensing film. Responsive to a temperature sensed by a thermal sensor proximate the ion sensing device, the heating element is selectively activated to alter a temperature of the ion sensing region to promote desired operation of the semiconductor device, such as to function as a bio sensor. Multiple semiconductor devices can be formed into an array.
1. A semiconductor device, comprising:
an ion sensing device, comprising:
an active region comprising a source, a drain and a channel situated between the source and the drain;
a gate situated over a first surface of the active region;
an ion sensing film situated over a second surface of the active region diametrically opposing the first surface; and
an ion sensing region situated over the ion sensing film, wherein the active region and the gate are embedded within a dielectric layer; and
a heating element proximate the ion sensing device.
2. The semiconductor device of claim 1 , comprising:
a thermal sensor proximate at least one of the ion sensing device or the heating element.
3. The semiconductor device of claim 1 , comprising a conductive line connected to the heating element and configured to apply a current to the heating element.
4. The semiconductor device of claim 1 , the heating element in contact with a surface of the dielectric layer.
5. The semiconductor device of claim 1 , the ion sensing device comprising an ion sensing field effective transistor, a nanowire, or a MOSFET.
6. The semiconductor device of claim 1 , the heating element comprising a resistor.
7. The semiconductor device of claim 1 , the heating element comprising at least one of metal or polysilicon.
8. The semiconductor device of claim 1 , the ion sensing region comprising a bio-solution.
9. The semiconductor device of claim 1 , the ion sensing region comprising a cubic dimension of between about 0.5 μm 3 to about 1.5 μm 3 .
10. The semiconductor device of claim 1 , the ion sensing film comprising at least one of HfO 2 , Ta 2 O 5 , or SiO 2 .
11. The semiconductor device of claim 1 , wherein the ion sensing region caps the ion sensing film.
12. The semiconductor device of claim 1 , wherein the heating element is not in contact with the active region.
13. A method of forming a semiconductor device comprising:
acquiring a composite structure comprising a dielectric layer and a field effect transistor (FET) embedded within the dielectric layer;
forming a conductive layer on the dielectric layer, wherein an active region of the FET is disposed between a gate of the FET and a surface of the dielectric layer upon which the conductive layer is formed;
patterning the conductive layer to define a heating element;
etching the dielectric layer to form an opening that extends from the surface of the dielectric layer to the active region of the FET; and
forming an ion sensing film within the opening.
14. The method of claim 13 , comprising:
forming a passivation layer over the heating element, the heating element in contact with the dielectric layer and the passivation layer.
15. The method of claim 14 , comprising:
forming a second opening in the passivation layer over the ion sensing film; and
forming an ion sensing region of an ion sensing device within the second opening.
16. An array, comprising:
a first ion sensing device;
a first heating element proximate the first ion sensing device;
a second ion sensing device;
a second heating element proximate the second ion sensing device; and
a thermal sensor situated between the first ion sensing device and the second ion sensing device.
17. The array of claim 16 , the first ion sensing device, comprising;
a first active region comprising a first source, a first drain, and a first channel situated between the first source and the first drain;
a first ion sensing film situated over the first channel; and
a first ion sensing region situated over the first ion sensing film.
18. The array of claim 17 , the second ion sensing device, comprising:
a second active region comprising a second source, a second drain, and a second channel situated between the second source and the second drain;
a second ion sensing film situated over the second channel; and
a second ion sensing region situated over the second ion sensing film.
19. The array of claim 16 , at least one of the first heating element or the second heating element comprising a resistor.
20. The array of claim 16 , the thermal sensor configured to cause at least one of a first current to flow through the first heating element at a first time to promote a first temperature at the first ion sensing device, a second current to flow through the first heating element at a second time to promote a second temperature at the first ion sensing device, or a third current to flow through the first heating element at a third time to promote a third temperature at the first ion sensing device.