Post-grind die backside power delivery
Disclosed is a die. The die may include a material layer, a plurality of vias, and a plurality of metal channels. The material layer may have a top side and a backside. The top side may include a plurality of pad connections. The plurality of vias may extend through the material layer from the top side to the backside. The plurality of metal channels may be in contact with the backside. Each of the plurality of metal channels may be in electrical communication with at least one of the plurality of pad connections and at least one of the plurality of vias.
1. A method of manufacturing a die, the method comprising:
receiving a material layer having top side and a backside;
forming a plurality of holes in the material layer;
forming a plurality of vias, each of the plurality of vias corresponding to one of the plurality of holes; and
forming a plurality of metal channels on the backside of the material layer, each of the plurality of metal channels electrically connecting a corresponding subset of the plurality of vias.
2. The method of claim 1 , further comprising grinding the backside of the material layer until the material layer is a predetermined thickness.
3. The method of claim 1 , further comprising applying a mask to the backside of the material layer prior to forming the plurality of metal channels, the mask defining a location and shape for each of the plurality of metal channels.
4. The method of claim 1 , wherein forming the plurality of metal channels includes sputter coating or spin coating the backside with a metal.
5. The method of claim 1 , further comprising separating the material layer from a wafer.
6. The method of claim 1 , further comprising forming a second die proximate the die.
7. A method of manufacturing a microelectronics package, the method comprising:
forming a substrate;
forming a first die and a second die, wherein forming each of the first die and the second die comprises:
plurality of holes in a material layer having a top side and a backside,
forming a plurality of vias, each of the plurality of vias corresponding to one of the plurality of holes, and
forming a plurality of metal channels on the backside of the material layer, each of the plurality of metal channels electrically connecting a corresponding subset of the plurality of vias;
embedding, at least partially, the first die into the substrate;
stacking the second die on top of the first die; and
electrically coupling the first die to the second die via a plurality of pad connections.
8. The method of claim 7 , wherein forming the first die and the second die further comprises grinding the backside of the material layer until the material layer is a predetermined thickness.
9. The method of claim 7 , wherein forming the first die and the second die further comprises applying a mask to the backside of the material layer prior to forming the plurality of metal channels, the mask defining a location and shape for each of the plurality of metal channels.
10. The method of claim 7 , further comprising attaching a third die to the substrate and electrically coupling the third die to the first die.
11. The method of claim 7 , further comprising attaching a third die to the substrate and electrically coupling the third die to the second die.
12. The method of claim 7 , further comprising attaching a third die to the substrate and electrically coupling the third die to the first die and the second die.
13. A method of manufacturing a die, the method comprising:
receiving a material layer having top side and a backside;
forming a plurality of holes in the material layer;
forming a plurality of vias, each of the plurality of vias corresponding to one of the plurality of holes;
forming a first metal layer on the backside of the material layer, the metal layer electrically connecting a corresponding first subset of the plurality of vias;
forming a passive layer adjacent the first metal layer; and
forming a second metal layer on the passive layer, the second metal layer electrically connecting a corresponding second subset of the plurality of vias.
14. The method of claim 13 , further comprising grinding the backside of the material layer until the material layer is a predetermined thickness.
15. The method of claim 13 , further comprising applying a mask to the backside of the material layer prior to forming the first metal layer, the mask defining a location for each of the first plurality second subset of the plurality of vias to pass through the first metal layer.
16. The method of claim 13 , further comprising separating the material layer from a wafer.
17. The method of claim 13 , further comprising forming a second die proximate the die.
18. The method of claim 13 , further comprising grinding the first metal layer or the second metal layer to increase surface roughness.
19. A method of manufacturing a microelectronics package, the method comprising:
forming a substrate;
forming a first die and a second die, wherein forming each of the first die and the second die comprises:
plurality of holes in a material layer having a top side and a backside,
forming a plurality of vias, each of the plurality of vias corresponding to one of the plurality of holes,
forming a first metal layer on the backside of the material layer, the first metal layer electrically connecting a corresponding first subset of the plurality of vias,
forming a passive layer adjacent the first metal layer, and
forming a second metal layer on a side of the passive layer, the second metal layer electrically connecting a corresponding second subset of the plurality of vias;
embedding, at least partially, the first die into the substrate;
stacking the second die on top of the first die; and
electrically coupling the first die to the second die via a plurality of pad connections.
20. The method of claim 19 , wherein forming the first die and the second die further comprises grinding the backside of the material layer until the material layer is a predetermined thickness.
21. The method of claim 19 , wherein forming the first die and the second die further comprises applying a mask to the backside of the material layer prior to forming the first metal layer, the mask defining a location for each of the first plurality second subset of the plurality of vias to pass through the first metal layer.
22. The method of claim 19 , wherein forming the first die and the second die further comprises separating the material layer from a wafer.
23. The method of claim 19 , further comprising attaching a third die to the substrate and electrically coupling the third die to the first die.
24. The method of claim 19 , further comprising attaching a third die to the substrate and electrically coupling the third die to the second die.
25. The method of claim 19 , further comprising attaching a third die to the substrate and electrically coupling the third die to the first die and the second die.