System-in-packages including a bridge die

1. A system-in-package comprising:

a redistributed line (RDL) structure comprising a first RDL pattern;

a first semiconductor chip disposed on the RDL structure such that a first chip pad of the first semiconductor chip electrically connected to the first RDL pattern;

a second semiconductor chip stacked on the first semiconductor chip such that the second semiconductor chip protrudes past a side surface of the first semiconductor chip, wherein a second chip pad which is disposed on the protrusion of the second semiconductor chip;

a bridge die disposed on the RDL structure to support the protrusion of the second semiconductor chip, wherein the bridge die comprises a body penetrated by a first through via, wherein the first through via electrically connects the second chip pad to the first RDL pattern, and

a dummy bump disposed between the first and second semiconductor chips to support the second semiconductor chip,

wherein the second semiconductor chip further comprises a dummy bonding pad disposed on a surface of the second semiconductor chip; and

wherein the dummy bump is bonded to the dummy bonding pad.

2. The system-in-package of claim 1 , wherein:

the second semiconductor chip comprises a memory semiconductor chip configured to store data; and

the first semiconductor chip is a system-on-chip (SoC) configured to receive the data stored in the memory semiconductor chip through a first electrical path comprising the second chip pad, the first through via, the first RDL pattern, and the first chip pad.

3. The system-in-package of claim 1 , wherein the bridge die further comprises:

a first post bump disposed on a top surface of the body and electrically connected to the first through via, wherein the first post bump has a diameter greater than a diameter of the first through via; and

a via pad disposed on a bottom surface of the body opposite to the first post bump and electrically connected to the first through via, wherein the via pad has a diameter greater than the diameter of the first through via.

4. The system-in-package of claim 3 , further comprising:

a first inner connector electrically connecting the via pad to the first RDL pattern; and

a second inner connector electrically connecting the first post bump to the second chip pad.

5. The system-in-package of claim 4 , wherein the dummy bump is spaced apart from the second inner connector.

6. The system-in-package of claim 4 , further comprising an adhesive layer disposed between the first and second semiconductor chips and spaced apart from the second inner connector, wherein the adhesive layer is configured to support the second semiconductor chip.

7. The system-in-package of claim 3 , wherein:

the second semiconductor chip further comprises a third chip pad disposed on the protrusion and spaced apart from the second chip pad;

the RDL structure further comprises a second RDL pattern which is spaced apart from the first RDL pattern and is electrically connected to a first outer connector; and

the bridge die further comprises a second through via which is spaced apart from the first through via and electrically connects the third chip pad to the first outer connector through the second RDL pattern and a second post bump electrically connected to the second through via.

8. The system-in-package of claim 7 , wherein the first outer connector, the second RDL pattern, the second through via, the second post bump, and the third chip pad constitute a second electrical path supplying electric power to the second semiconductor chip or grounding the second semiconductor chip.

9. The system-in-package of claim 3 , wherein:

the body of the bridge die has a thickness which is less than a thickness of the first semiconductor chip; and

a combined thickness of the first post bump, the first through via, and the via pad is substantially equal to the thickness of the first semiconductor chip.

10. The system-in-package of claim 1 , wherein:

the body of the bridge die comprises a silicon material; and

the first through via of the bridge die comprises a through silicon via (TSV).

11. The system-in-package of claim 1 , wherein:

the RDL structure further comprises a third RDL pattern spaced apart from the first RDL pattern and electrically connected to a second outer connector; and

the first semiconductor chip further comprises a fourth chip pad electrically connected to the third RDL pattern through a third inner connector.

12. The system-in-package of claim 1 , further comprising a molding layer disposed on the RDL structure to cover the first semiconductor chip and the bridge die and to surround the second semiconductor chip.