3D vertical NAND memory device including multiple select lines and control lines having different vertical spacing
Some embodiments include apparatuses, and methods of forming and operating the apparatuses. Some of the apparatuses include a pillar including a length, a memory cell string and control lines located along a first segment of the pillar, and select lines located along a second segment of the pillar. The control lines include at least a first control line and a second control line. The first control line is adjacent the second control line. The first control line is separated from the second control line by a first distance in a direction of the length of the pillar. The select lines include at least a first select line and a second select line. The first select line is separated from the second select line by a second distance in the direction of the length of the pillar. The second distance is less than the first distance.
1. An apparatus comprising:
a pillar including a first segment, a second segment, and a third segment, the second segment located between the first and third segments;
a memory cell string and control lines located adjacent the first segment of the pillar;
a first dielectric between a first control line of the control lines and a second control line of the control lines;
select lines located adjacent the third segment of the pillar, the select lines being coupled to each other;
a second dielectric between a first select line of the select lines and a second select line of the select lines, wherein a combination of a thickness of the first select line, a thickness of the second select line, and a thickness of the second dielectric is less than a combination of a thickness of the first control line, a thickness of the second control line, and a thickness of the first dielectric; and
an additional select line located adjacent the second segment of the pillar, the additional select line being electrically separated from the select lines.
2. The apparatus of claim 1 , wherein:
the first control line is adjacent the second control line and separated from the second control line by a first distance in a direction of the length of the pillar; and
the first select line is separated from the second select line by a second distance in the direction of the length of the pillar, wherein the second distance is less than the first distance.
3. The apparatus of claim 1 , wherein:
the additional select line is adjacent the first select line and separated from the first select line by a first distance in the direction of the length of the pillar; and
the first select line is separated from the second select line by a second distance in the direction of the length of the pillar, wherein the second distance is less than the first distance.
4. The apparatus of claim 1 , wherein:
the additional select line is adjacent a control line of the control lines and separated from the control line by a first distance in the direction of the length of the pillar; and
the first select line is separated from the second select line by a second distance in the direction of the length of the pillar, wherein the second distance is less than the first distance.
5. The apparatus of claim 1 , further comprising:
a first driver circuit coupled to the select lines; and
a second driver circuit coupled to the additional select line.
6. The apparatus of claim 1 , wherein the select lines, the additional select line, and the control lines include a same material.
7. The apparatus of claim 1 , wherein the select lines, the additional select line, and the control lines are formed from metal.
8. The apparatus of claim 1 , further comprising:
a data line; and
a conductive bridge coupled to the pillar and the data line, the conductive bridge and the data line extending in a same direction.
9. The apparatus of claim 1 , wherein the control lines and at least one of the additional select line and the select lines have a same thickness.
10. The apparatus of claim 1 , wherein each of the select lines and the additional select line has a first width, each of the control lines has a second width, and the first width is less than the second width.
11. The apparatus of claim 1 , wherein the select lines, the additional select line, and the control lines have a same width.
12. The apparatus of claim 1 , further comprising:
a first slit, and a first dielectric material in the first slit, the first slit located immediately on a first side of the control lines, he select lines, and the additional select line; and
a second slit, and a second dielectric material in the second slit, the second slit located immediately next to a second side opposite from the first side of the control lines, the select lines, and the additional select line.
13. An apparatus comprising:
a data line;
a pillar located under the data line, the pillar including a first segment, a second segment, and a third segment, the second segment located between the first and third segments, the third segment located between the second segment and the data line;
a memory cell string and control lines located adjacent the first segment of the pillar, the control lines including a first control line and a second control line, the first control line adjacent the second control line and separated from the second control line by a first distance in a direction of the length of the pillar;
select lines located adjacent the third segment of the pillar, the select lines being coupled to each other, the select lines including a first select line and a second select line, the first select line separated from the second select line by a second distance in the direction of the length of the pillar, wherein the second distance is less than the first distance; and
an additional select line located adjacent the second segment of the pillar, the additional select line being electrically separated from the select lines.
14. The apparatus of claim 13 , wherein the additional select line is adjacent the first select line and separated from the first select line by a third distance, and the second distance is less than the third distance.
15. The apparatus of claim 13 , wherein the additional select line is adjacent the first control line and separated from the first control line by a third distance, and the second distance is less than the third distance.
16. The apparatus of claim 13 , wherein the pillar includes a conductive material directly contacting the data line.
17. The apparatus of claim 13 , further comprising a conductive bridge coupled to the pillar and the data line, the conductive bridge and the data line extending in a same direction.
18. An apparatus comprising:
a substrate;
a pillar extending from the substrate, the pillar including a first segment, a second segment, and a third segment, the second segment located between the first and third segments, and the third segment located between the second segment and the substrate,
a memory cell string and control lines located adjacent the first segment of the pillar;
select lines located adjacent the third segment of the pillar, the select lines being coupled to each other, the select lines including a first select line and a second select line, the first select line separated from the second select line by a first distance in the direction of the length of the pillar; and
an additional select line located adjacent the second segment of the pillar, the additional select line being electrically separated from the select lines, the additional select line is adjacent a control line of the control lines and separated from the control line by a second distance in the direction of the length of the pillar, wherein the second distance is greater than the first distance.
19. The apparatus of claim 18 , wherein the additional select line is adjacent the first select line and separated from the first select line by a third distance, and the third distance is greater than the first distance.
20. The apparatus of claim 18 , wherein the control lines include an additional control line adjacent the control line and separated from the control line by a third distance in the direction of the length of the pillar, and the third distance is greater than the first distance.