Fin-like field effect transistor (FinFET) device and method of manufacturing same

1. A method comprising:

forming a first fin structure and a second fin structure, wherein the first fin structure and the second fin structure include a first semiconductor material portion disposed over a second semiconductor material portion;

forming a gate structure that covers a first region of the first fin structure and a first region of the second fin structure while exposing a second region of the first fin structure and a second region of the second fin structure;

etching the first semiconductor material portion of the second region of the first fin structure to form a first trench and the first semiconductor material portion of the second region of the second fin structure to form a second trench; and

epitaxially growing a third semiconductor material that fills the first trench and the second trench, wherein the epitaxially growing is performed until merging is achieved between the third semiconductor material grown from the first trench and the third semiconductor material grown from the second trench.

2. The method of claim 1 , wherein the etching includes:

completely removing the first semiconductor material portion of the second region of the first fin structure to expose the second semiconductor material portion of the second region of the first fin structure; and

completely removing the first semiconductor material portion of the second region of the second fin structure to expose the second semiconductor material portion of the second region of the second fin structure.

3. The method of claim 1 , wherein the etching includes:

partially removing the first semiconductor material portion of the second region of the first fin structure to expose the second semiconductor material portion of the second region of the first fin structure; and

partially removing the first semiconductor material portion of the second region of the second fin structure to expose the second semiconductor material portion of the second region of the second fin structure.

4. The method of claim 1 , further comprising epitaxially growing a fourth semiconductor material over the third semiconductor material.

5. The method of claim 1 , wherein the epitaxially growing the third semiconductor material includes epitaxially growing silicon germanium.

6. The method of claim 1 , wherein the epitaxially growing the third semiconductor material includes epitaxially growing silicon.

7. The method of claim 1 , further comprising:

before forming the gate structure, forming an isolation feature between the first fin structure and the second fin structure; and

wherein the etching the first semiconductor material portion of the second region of the first fin structure to form the first trench and the first semiconductor material portion of the second region of the second fin structure to form the second trench includes etching the first semiconductor material portion until a topmost surface of the first fin structure and a topmost surface of the second fin structure are each lower than a topmost surface of the isolation feature.

8. The method of claim 1 , wherein the forming the first fin structure and the second fin structure includes:

performing a lithography and etching process to form the second semiconductor material portion; and

performing a condensation process to form the first semiconductor material portion.

9. The method of claim 1 , wherein the third semiconductor material has a substantially planar top surface.

10. A method comprising:

forming a first fin and a second fin having a trench defined therebetween, wherein the first fin and the second fin each include a first semiconductor layer disposed over a second semiconductor layer, and further wherein a composition of the first semiconductor layer is different than a composition of the second semiconductor layer;

forming an isolation feature in the trench between the first fin and the second fin;

forming a gate structure over the isolation feature, a first region of the first fin, and a first region of the second fin, such that the gate structure is disposed between second regions of the first fin and between second regions of the second fin;

recessing the first fin and the second fin; and

after recessing the first fin and the second fin, forming a third semiconductor layer over the first fin and the second fin, wherein the third semiconductor layer extends over the isolation feature and merges the first fin and the second fin.

11. The method of claim 10 , wherein the recessing the first fin and the second fin includes performing an etching process that uses a mixture of HBr, Cl 2 , and O 2 .

12. The method of claim 10 , wherein the recessing the first fin and the second fin includes performing an etching process that uses an RF bias of about 30 W to about 400 W.

13. The method of claim 10 , wherein the forming the first fin and the second fin having the trench defined therebetween includes:

performing a lithography and etching process on a silicon substrate to form a first silicon substrate extension separated from a second silicon substrate extension by the trench;

after forming the isolation feature, wherein the isolation feature surrounds a lower portion of the first silicon substrate extension and the second silicon substrate extension, forming a silicon germanium layer on an upper portion of the first silicon substrate extension and an upper portion of the second silicon substrate extension; and

performing a condensation process that causes germanium from the silicon germanium layer to diffuse into the upper portion of the first silicon substrate extension and the upper portion of the second silicon substrate extension.

14. The method of claim 10 , wherein:

the recessing the first fin and the second fin includes forming a first trench having sidewalls defined by the isolation feature and a second trench having sidewalls defined by the isolation feature; and

the forming the third semiconductor layer over the first fin and the second fin includes filling the first trench and filling the second trench with the third semiconductor layer.

15. The method of claim 10 , wherein:

the first semiconductor layer includes silicon and germanium;

the second semiconductor layer includes silicon; and

the third semiconductor layer includes silicon or silicon and germanium.

16. The method of claim 10 , further comprising forming a fourth semiconductor layer over the third semiconductor layer, wherein a composition of the fourth semiconductor layer is different than the composition of the third semiconductor layer, and further wherein the fourth semiconductor layer extends over the isolation feature.

17. A method comprising:

forming a first fin and a second fin, wherein the first fin and the second fin each include a silicon-and-germanium-comprising layer disposed over a silicon-comprising layer;

forming a gate structure over a first channel region of the first fin and a second channel region of the second fin, such that the gate structure interposes first source/drain regions of the first fin and second source/drain regions of the second fin;

after selectively etching the silicon-and-germanium-comprising layer in the first source/drain regions of the first fin and the second source/drain regions of the second fin, forming a first semiconductor layer over the first fin and the second fin, wherein the first semiconductor layer extends between and merges the first fin and the second fin; and

forming a second semiconductor layer over the first semiconductor layer, wherein a composition of the second semiconductor layer is different than a composition of the first semiconductor layer.

18. The method of claim 17 , wherein:

the selectively etching the silicon-and-germanium-comprising layer includes completely removing the silicon-and-germanium-comprising layer and exposing the silicon-comprising layer, wherein the silicon-and-germanium-comprising layer is a first silicon-and-germanium-comprising layer and the silicon-comprising layer is a first silicon-comprising layer;

the forming the first semiconductor layer includes forming a second silicon-comprising layer on the first silicon-comprising layer; and

the forming the second semiconductor layer includes forming a second silicon-and-germanium-comprising layer on the second silicon-comprising layer.

19. The method of claim 17 , wherein:

the selectively etching the silicon-and-germanium-comprising layer includes partially removing the silicon-and-germanium-comprising layer, wherein a remaining portion of the silicon-and-germanium-comprising layer is a first silicon-and-germanium-comprising layer and the silicon-comprising layer is a first silicon-comprising layer;

the forming the first semiconductor layer includes forming a second silicon-and-germanium-comprising layer on the first silicon-and-germanium-comprising layer; and

the forming the second semiconductor layer includes forming a second silicon-comprising layer over the second silicon-and-germanium-comprising layer.

20. The method of claim 17 , wherein:

the selectively etching the silicon-and-germanium-comprising layer includes forming a first trench and a second trench; and

the forming the first semiconductor layer includes filling the first trench and the second trench with the first semiconductor layer.