IP Library Granted Patent US 11,257,727
Granted Patent B2
US 11,257,727 · App. 16/678,037 · Granted Feb 22, 2022

Seal for microelectronic assembly

Inventors: Rajesh Katkar (San Jose, CA); Liang Wang (Milpitas, CA); Cyprian Emeka Uzoh (San Jose, CA); Shaowu Huang (Sunnyvale, CA); Guilian Gao (San Jose, CA); Ilyas Mohammed (Santa Clara, CA)
Assignee: INVENSAS BONDING TECHNOLOGIES, INC.
H01L23/10B81B7/0032B81B7/0074B81C1/00261B81C1/00269B81C1/00333H01L23/02H01L23/04H01L23/053B81C2203/038
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Quick Facts
Patent No.
US 11,257,727
App. No.
16/678,037
Granted
Feb 22, 2022
Kind
B2
Abstract

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

Claims (29)

1. A method of forming a microelectronic assembly, the method comprising:

bonding a first bonding surface of a first microelectronic component to a second bonding surface of a second microelectronic component along a bond joint by directly bonding a first insulating surface of the first bonding surface to a second insulating surface of the second bonding surface without an adhesive to form a covalent bond between the first and second insulating surfaces, a cavity disposed between the first and second microelectronic components;

after the bonding, forming a channel from an outside surface of the first microelectronic component to at least the bond joint, the outside surface opposite the first bonding surface; and

forming a seal in the channel that extends from the outside surface to at least the bond joint.

2. The method of claim 1 , wherein forming the channel comprises forming the channel to cross the bond joint, the seal crossing the bond joint.

3. The method of claim 1 , wherein forming the channel comprises forming the channel to fully surround the cavity.

4. The method of claim 1 , wherein one of the first and second microelectronic components comprises a die and the cavity is formed within the die, and the other of the first and second microelectronic components comprises a microelectromechanical systems (MEMS) die.

5. The method of claim 1 , further comprising, after the bonding, mounting the second microelectronic component to a third microelectronic component.

6. The method of claim 5 , wherein the second microelectronic component comprises a microelectromechanical systems (MEMS) die and the third microelectronic component comprises a logic die, the MEMS die mounted to the logic die.

7. The method of claim 1 , wherein forming the channel comprises exposing a metallic feature on or in the second microelectronic component, and wherein forming the seal comprises contacting the seal with the metallic feature on or in the second microelectronic component.

8. The method of claim 1 , wherein the seal comprises an interior seal, the method further comprising:

providing an exterior seal that surrounds the bond joint and the second microelectronic component.

9. A microelectronic assembly comprising:

a first microelectronic component having a first insulating bonding surface;

a second microelectronic component having a second insulating bonding surface, the first and second bonding surfaces directly bonded together along a bond joint by way of a low temperature covalent bond;

a cavity between the first and second microelectronic components;

a channel extending from an outside surface of the first microelectronic component to at least the bond joint, the outside surface opposite the first bonding surface; and

a seal disposed in the channel and that extends from the outside surface to at least the bond joint.

10. The microelectronic assembly of claim 9 , wherein the channel and the seal cross the bond joint.

11. The microelectronic assembly of claim 9 , wherein the channel fully surrounds the cavity.

12. The microelectronic assembly of claim 9 , wherein one of the first and second microelectronic components comprises a die and the cavity is formed within the die, and the other of the first and second microelectronic components comprises a microelectromechanical systems (MEMS) die.

13. The microelectronic assembly of claim 12 , further comprising a logic die, the MEMS die mounted to the logic die.

14. The microelectronic assembly of claim 9 , wherein the channel extends from the outside surface of the first microelectronic component to a conductor in the second microelectronic component.

15. The microelectronic assembly of claim 14 , wherein the seal contacts the conductor in the second microelectronic component.

16. The microelectronic assembly of claim 14 wherein the conductor is partially or fully embedded within the second microelectronic component.

17. The microelectronic assembly of claim 16 wherein the conductor is disposed at or near the bond joint.

18. The microelectronic assembly of claim 16 wherein the conductor fully surrounds the cavity.

19. The microelectronic assembly of claim 9 , wherein the seal comprises a metal.

20. The microelectronic assembly of claim 19 , wherein the metal fills the channel.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2025
From: KATKAR, RAJESH; WANG, LIANG; UZOH, CYPRIAN EMEKA; HUANG, SHAOWU; GAO, GUILIAN; MOHAMMED, ILYAS
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 072606/0659 →
CHANGE OF NAME Recorded Oct 20, 2025
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 073173/0507 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
Cited By (1)
US 12,690,488