IP Library Granted Patent US 11,515,174
Granted Patent B2
US 11,515,174 · App. 16/681,214 · Granted Nov 29, 2022

Semiconductor devices with package-level compartmental shielding and associated systems and methods

Inventors: Youngik Kwon (Taichung, TW); Jong Sik Paek (Taichung, TW)
Assignee: Micron Technology, Inc.
H01L21/565H01L21/67126H01L23/315H01L23/3135H01L23/552
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Quick Facts
Patent No.
US 11,515,174
App. No.
16/681,214
Granted
Nov 29, 2022
Kind
B2
Abstract

A mold chase for packaging a compartmentally shielded multifunctional semiconductor is provided. The mold chase generally includes a first cavity and a second cavity separated by a trench plate positioned between a first component and a second component of the multifunctional semiconductor between which a compartmental shield is required. The mold chase is lowered into a molding position over the multifunctional semiconductor and a molding material is injected through an inlet sprue into the first and second cavities to surround the first and second components, respectively. After the molding material is cured, the mold chase is removed and an open trench is formed in the cured molding material by the trench plate. The open trench is filled with a conductive material to form the compartmental shield. A conformal shield may be added to cover the package.

Claims (18)

1. A method of shielding a compartment of a multifunctional semiconductor, the method comprising:

positioning a mold chase into a molding position with respect to the multifunctional semiconductor, the mold chase having a top panel with a sprue, a sidewall extending from a perimeter of the top panel, and a trench plate projecting from the top panel at a position between a first component and a second component of the multifunctional semiconductor to define a first cavity and a second cavity, wherein the side panel contacts a substrate of the multifunctional semiconductor in the molding position;

injecting a molding material through the sprue into the first cavity, wherein the trench plate has a passageway to fluidly couple the first cavity and the second cavity to flow the molding material from the first cavity to the second cavity, wherein the passageway is spaced apart from the substrate of the multifunctional semiconductor along the trench plate;

removing the mold chase to form a first molded structure encasing the first component, a second molded structure encasing the second component, and an open trench between the first and second molded structures;

filling the open trench with a conductive material to form a compartmental shield between the first and second components; and

forming an outer conformal shield on the first and second molded structures separately from forming the compartmental shield.

2. The method of claim 1 , wherein the trench plate extends to contact the substrate in the molding position and completely separate the first cavity from the second cavity.

3. The method of claim 1 , wherein the conformal shield is applied to exposed surfaces of the first molded structure, the second molded structure, and the compartmental shield using sputter deposition.

4. The method of claim 1 , wherein the molding material is selected from the group consisting of a resin, an epoxy resin, a silicone-based material, a polyimide, and combinations thereof.

5. A method of shielding a compartment and a package of a multifunctional semiconductor, the method comprising:

positioning a mold chase into a molding position over the multifunctional semiconductor, the mold chase having a first cavity surrounding a first component of the multifunctional semiconductor, a second cavity surrounding a second component of the multifunctional semiconductor, and a trench plate between the first cavity and the second cavity;

injecting a molding material through an inlet sprue into the first cavity to surround the first component, wherein the trench plate has a passageway to fluidly couple the first cavity and the second cavity to flow the molding material from the first cavity into the second cavity to surround the second component, wherein the passageway is spaced apart from a substrate of the multifunctional semiconductor along the trench plate;

removing the mold chase to form an open trench in the cured molding material by the trench plate;

filling the open trench with a conductive material to form a compartmental shield; and

covering the molding material and the compartmental shield with a conformal shield separately from forming the compartmental shield.

6. The method of claim 5 , wherein the trench plate extends to contact the substrate in the molding position and separate the first cavity from the second cavity.

7. The method of claim 5 , wherein the conformal shield is applied to exposed surfaces of the molding material and compartmental shield using sputter deposition.

8. The method of claim 5 , wherein the molding material is selected from the group consisting of a resin, an epoxy resin, a silicone-based material, a polyimide, and combinations thereof.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2019
From: KWON, YOUNGIK; PAEK, JONG SIK
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050984/0141 →
Continuity (1)
Related Publication 20210143073A1 · May 13, 2021
Cited By (2)
US 12,542,358 US 12,744,322