Manufacturing method of semiconductor device
A method of manufacturing a semiconductor device includes forming a stacked structure, forming an opening in the stacked structure, forming a preliminary channel layer in the opening, forming a channel layer by performing heat treatment on the preliminary channel layer, etching an inner surface of the channel layer, and performing ozone (O 3 ) treatment on an etched inner surface of the channel layer.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a stacked structure;
forming an opening in the stacked structure;
forming a preliminary channel layer in the opening;
forming a channel layer by performing heat treatment on the preliminary channel layer;
etching an inner surface of the channel layer; and
performing ozone (O 3 ) treatment on an etched inner surface of the channel layer.
2. The method of claim 1 , wherein the preliminary channel layer includes an amorphous silicon layer and the channel layer includes a polysilicon layer.
3. The method of claim 2 , wherein the amorphous silicon layer is crystallized to form the polysilicon layer and a grain size of the polysilicon layer is increased, by the heat treatment.
4. The method of claim 1 , wherein the etched inner surface includes a defect and the defect is cured by the O 3 treatment.
5. The method of claim 1 , wherein the inner surface of the channel layer is etched using a wet etch process.
6. The method of claim 1 , wherein the inner surface of the channel layer is etched using an isotropic etch process.
7. The method of claim 1 , wherein the O 3 treatment is performed using O 3 plasma.
8. The method of claim 1 , wherein the O 3 treatment is performed using O 3 water.
9. The method of claim 1 , wherein the O 3 treatment is performed by exposing the channel layer to O 3 gas.
10. The method of claim 1 , further comprising forming a memory layer in the opening before forming the preliminary channel layer.
11. The method of claim 1 , further comprising forming a gap-filling insulating layer in a hole defined by the channel layer subjected to the O 3 treatment.
12. The method of claim 1 , wherein the stacked structure includes first material layers and second material layers stacked alternately with each other.
13. A method of manufacturing a semiconductor device, the method comprising:
depositing an amorphous silicon layer on a dielectric layer;
forming a polysilicon layer by performing heat treatment on the amorphous silicon layer;
etching the polysilicon layer to reduce a thickness of the polysilicon layer; and
performing O 3 treatment on an etched surface of the polysilicon layer.
14. The method of claim 13 , wherein the amorphous silicon layer is crystallized to form the polysilicon layer and a grain size of the polysilicon layer is increased, by the heat treatment.
15. The method of claim 13 , wherein the etched surface includes a defect and the defect is cured by the O 3 treatment.
16. The method of claim 13 , wherein the O 3 treatment is performed using O 3 plasma.
17. The method of claim 13 , wherein the O 3 treatment is performed using O 3 water.
18. The method of claim 13 , wherein the O 3 treatment is performed by exposing the etched surface to O 3 gas.
19. The method of claim 13 , further comprising forming an insulating layer on the etched surface subjected to the O 3 treatment.