Absorption enhancement structure for image sensor
The present disclosure, in some embodiments, relates to method of forming an integrated chip. The method may be performed by forming an image sensing element within a substrate. A dry etching process is performed on the substrate to form a plurality of intermediate protrusions defined by the substrate. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions from the plurality of intermediate protrusions.
1. A method of forming an integrated chip, comprising:
forming an image sensing element within a substrate;
performing a dry etching process on the substrate to form a plurality of intermediate protrusions defined by the substrate; and
performing a wet etching process on the plurality of intermediate protrusions to form a plurality of protrusions from the plurality of intermediate protrusions.
2. The method of claim 1 , further comprising:
forming a masking layer over the substrate; and
performing the dry etching process on the substrate according to the masking layer to define the plurality of intermediate protrusions.
3. The method of claim 1 , wherein the image sensing element is formed within the substrate prior to performing the dry etching process.
4. The method of claim 1 , wherein the image sensing element is formed within the substrate after performing the dry etching process.
5. The method of claim 1 ,
wherein a first one of the plurality of protrusions has a flat segment as viewed in a cross-sectional view of the plurality of protrusions; and
wherein a line that extends along the flat segment intersects an opposing sidewall of the first one of the plurality of protrusions.
6. The method of claim 1 ,
wherein a horizontally extending surface having a first width extends between adjacent ones of the plurality of intermediate protrusions; and
wherein the wet etching process reduces a width of the horizontally extending surface from the first width to a second width smaller than the first width.
7. The method of claim 1 ,
wherein the substrate has one or more surfaces extending between a bottom and a top of a first one of the plurality of protrusions; and
wherein a slope of the one or more surfaces increases from a first point a first distance over the image sensing element to a second point a second distance over the image sensing element, the second distance greater than the first distance.
8. A method of forming an integrated chip, comprising:
performing a dry etch on a first side of a substrate to define a plurality of intermediate protrusions having sidewalls oriented at a first angle with respect to a horizontal plane that is parallel to a second side of the substrate opposing the first side; and
performing a second etch on the plurality of intermediate protrusions to reduce an angle of the sidewalls and define a plurality of protrusions.
9. The method of claim 8 , further comprising:
forming a ridge along the first side of the substrate, wherein the ridge has an uppermost surface that is configured to continuously extend in a closed path around the plurality of protrusions.
10. The method of claim 9 , wherein a second horizontal plane extends along the uppermost surface of the ridge and is separated from the plurality of protrusions by one or more non-zero distances.
11. The method of claim 9 , wherein the ridge has a greater width than a respective one of the plurality of protrusions.
12. The method of claim 9 , wherein the ridge has a height that is in a range of between approximately 5% and approximately 15% larger than heights of the plurality of protrusions.
13. The method of claim 8 , wherein the dry etch forms a damaged region having crystalline defects along outer edges of the plurality of intermediate protrusions and the second etch removes the damaged region.
14. The method of claim 8 , wherein the plurality of protrusions respectively have a height in a range of between approximately 400 nm and approximately 600 nm.
15. A method of forming an integrated chip, comprising:
forming an image sensing element within a substrate;
performing a wet etching process to form surfaces of the substrate that define a plurality of protrusions; and
wherein the surfaces of the substrate define a first one of the plurality of protrusions having a first segment, wherein an imaginary line extending along the first segment intersects an opposing sidewall of the first one of the plurality of protrusions.
16. The method of claim 15 , wherein the wet etching process exposes the substrate to tetramethylammonium hydroxide (TMAH).
17. The method of claim 15 ,
wherein the substrate comprises a base substrate and an epitaxial layer over the base substrate; and
wherein the wet etching process forms the surfaces of the substrate that define the plurality of protrusions within the epitaxial layer.
18. The method of claim 15 , further comprising:
forming a dielectric material within recesses between the plurality of protrusions.
19. The method of claim 18 , further comprising:
performing a planarization process to remove part of the dielectric material from over the plurality of protrusions.
20. The method of claim 15 , further comprising:
forming a masking layer over the substrate;
performing a dry etching process to etch the substrate according to the masking layer and define a plurality of intermediate protrusions;
removing the masking layer after defining the plurality of intermediate protrusions; and
performing the wet etching process on the plurality of intermediate protrusions to form the plurality of protrusions.