IP Library › Granted Patent US 11,257,763
Granted Patent B2
US 11,257,763 · App. 16/702,213 · Granted Feb 22, 2022

Electronic device package and method for manufacturing the same

Inventors: Mei-Ju Lu (Kaohsiung, TW); Jr-Wei Lin (Kaohsiung, TW)
Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
H01L23/5384H01L21/563H01L21/76877H01L23/3121H01L23/367H01L24/05H01L2224/02371H01L2224/02372
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,257,763
App. No.
16/702,213
Filed
Dec 3, 2019
Granted
Feb 22, 2022
Kind
B2
Art Unit
2816
USPC
257/774
Abstract

An electronic device package includes a substrate, a first semiconductor die, a second semiconductor die and an encapsulant. The substrate includes a first surface, and a second surface opposite to the first surface. The substrate defines a cavity recessed from the first surface. The first semiconductor die is disposed in the cavity. The second semiconductor die is disposed over and electrically connected to the first semiconductor die. The encapsulant is disposed in the cavity of the substrate. The encapsulant encapsulates a first sidewall of the first semiconductor die, and exposes a second sidewall of the first semiconductor die.

Claims (32)

1. An electronic device package, comprising:

a substrate including a first surface, and a second surface opposite to the first surface, wherein the substrate defines a cavity recessed from the first surface;

a first semiconductor die disposed in the cavity;

a second semiconductor die disposed over and electrically connected to the first semiconductor die;

an encapsulant disposed in the cavity of the substrate, wherein the encapsulant encapsulates a first sidewall of the first semiconductor die, and exposes a second sidewall of the first semiconductor die; and

a first redistribution layer (RDL) disposed between the first surface of the substrate and the second semiconductor die, and electrically connected to the first semiconductor die and the second semiconductor die.

2. The electronic device package of claim 1 , wherein the first semiconductor die comprises a photonic IC, and the second semiconductor die comprises an electronic IC.

3. The electronic device package of claim 1 , wherein the encapsulant further partially encapsulates a first active surface of the first semiconductor die.

4. The electronic device package of claim 3 , wherein an edge of the encapsulant is substantially coplanar with the second sidewall of the first semiconductor die.

5. The electronic device package of claim 1 , wherein a first active surface of the first semiconductor die faces a second active surface of the second semiconductor die.

6. The electronic device package of claim 1 , further comprising a second RDL disposed on the second surface of the substrate.

7. The electronic device package of claim 6 , further comprising a plurality of conductive through vias extending from the first surface to the second surface of the substrate, and electrically connecting the first RDL to the second RDL.

8. The electronic device package of claim 7 , further comprising a plurality of interconnectors disposed on the conductive through vias respectively, surrounded by the encapsulant, and electrically connecting the conductive through vias to the first RDL.

9. The electronic device package of claim 7 , wherein the encapsulant further covers the first surface of the substrate.

10. The electronic device package of claim 7 , further comprising an insulative film between the substrate and the conductive through via.

11. The electronic device package of claim 1 , wherein a thickness of the first semiconductor die is smaller than or substantially equal to a depth of the cavity.

12. The electronic device package of claim 1 , wherein a thickness of the first semiconductor die is larger than a depth of the cavity.

13. The electronic device package of claim 1 , further comprising an optical fiber optically coupled to the first semiconductor die.

14. The electronic device package of claim 1 , further comprising:

a thermal dissipation structure disposed on the second semiconductor die; and

a thermal interface material disposed between the second semiconductor die and the thermal dissipation structure.

15. The electronic device package of claim 1 , further comprising an adhesive layer between the first semiconductor die and the substrate to attach the first semiconductor die to the substrate.

16. An electronic device package, comprising:

a substrate including a first top surface, a second top surface lower than the first top surface, and a bottom surface opposite to the first top surface and the second top surface;

a photonic IC disposed on the second top surface of the substrate, wherein the photonic IC includes at least one exposed sidewall;

an electronic IC disposed over and electrically connected to the photonic IC;

a conductive through via extending from the first top surface to the bottom surface of the substrate; and

a first redistribution layer (RDL) disposed between the photonic IC and the electronic IC, and electrically connected to the conductive through via, the photonic IC and the electronic IC.

17. The electronic device package of claim 16 , further comprising:

a second RDL disposed on the bottom surface of the substrate and electrically connected to the conductive through via.

18. The electronic device package of claim 16 , further comprising an encapsulant disposed on the second top surface of the substrate, partially encapsulating the photonic IC and exposing the exposed sidewall of the photonic IC.

19. The electronic device package of claim 18 , further comprising a conductive pillar disposed on and electrically connected to the conductive through via, and surrounded by the encapsulant.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2019
From: LU, MEI-JU; LIN, JR-WEI
To: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Reel/Frame 051166/0363 →
Continuity (1)
Related Publication 20210167016A1 · Jun 3, 2021
Cited By (3)
US 12,242,123 US 12,538,814 US 12,710,606