Method of forming deep trench isolation in radiation sensing substrate and image sensor device
A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiC x N (2-x) , and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
1. A device, comprising:
a substrate having a first surface and a second surface;
a first dielectric layer extending from the first surface of the substrate toward the second surface of the substrate;
a corrosion resistive layer extending from the first surface of the substrate toward the second surface of the substrate, wherein the corrosion resistive layer is a titanium carbon nitride layer;
a second dielectric layer, wherein:
the first dielectric layer is disposed between the second dielectric layer and the substrate, and
the corrosion resistive layer and the first dielectric layer are in contact with the second dielectric layer; and
an interconnection structure, wherein the substrate is disposed between the interconnection structure and the corrosion resistive layer.
2. The device of claim 1 , wherein the first dielectric layer is disposed between the substrate and the corrosion resistive layer.
3. The device of claim 1 , comprising:
a reflective material disposed between a first sidewall of the corrosion resistive layer and a second sidewall of the corrosion resistive layer.
4. The device of claim 1 , comprising:
a reflective structure, wherein the second dielectric layer is disposed between the reflective structure and the corrosion resistive layer.
5. The device of claim 4 , comprising:
a reflective material disposed between a first sidewall of the corrosion resistive layer and a second sidewall of the corrosion resistive layer.
6. The device of claim 5 , wherein the second dielectric layer is disposed between the reflective structure and the reflective material.
7. The device of claim 1 , comprising:
a radiation sensing region disposed in the substrate and configured to sense radiation incident on the first surface of the substrate.
8. A device, comprising:
a substrate having a first surface and a second surface;
a first dielectric layer extending from the first surface of the substrate toward the second surface of the substrate;
a corrosion resistive layer extending from the first surface of the substrate toward the second surface of the substrate, wherein the corrosion resistive layer is a titanium carbon nitride layer;
a reflective material disposed between a first sidewall of the corrosion resistive layer and a second sidewall of the corrosion resistive layer;
a second dielectric layer, wherein:
the first dielectric layer is disposed between the second dielectric layer and the substrate, and
the reflective material, the corrosion resistive layer, and the first dielectric layer are in contact with the second dielectric layer; and
an interconnection structure, wherein the substrate is disposed between the interconnection structure and the corrosion resistive layer.
9. The device of claim 8 , wherein the first dielectric layer is disposed between the substrate and the corrosion resistive layer.
10. The device of claim 8 , comprising:
a reflective structure, wherein the second dielectric layer is disposed between the reflective structure and the corrosion resistive layer.
11. The device of claim 10 , wherein the second dielectric layer is disposed between the reflective structure and the reflective material.
12. The device of claim 8 , comprising:
a radiation sensing region disposed in the substrate and configured to sense radiation incident on the first surface of the substrate.
13. A device, comprising:
a first substrate having a first surface and a second surface;
a first dielectric layer extending from the first surface of the first substrate toward the second surface of the first substrate;
a corrosion resistive layer extending from the first surface of the first substrate toward the second surface of the first substrate, wherein the corrosion resistive layer is a titanium carbon nitride layer; and
a second dielectric layer, wherein:
the first dielectric layer is disposed between the second dielectric layer and the first substrate, and
the corrosion resistive layer and the first dielectric layer are in contact with the second dielectric layer.
14. The device of claim 13 , comprising:
a second substrate, wherein the first substrate is disposed between the corrosion resistive layer and the second substrate.
15. The device of claim 14 , comprising:
an interconnection structure disposed between the first substrate and the second substrate.
16. The device of claim 13 , wherein the first dielectric layer is disposed between the first substrate and the corrosion resistive layer.
17. The device of claim 13 , comprising:
a reflective material disposed between a first sidewall of the corrosion resistive layer and a second sidewall of the corrosion resistive layer.
18. The device of claim 13 , comprising:
a reflective structure, wherein the second dielectric layer is disposed between the reflective structure and the corrosion resistive layer.
19. The device of claim 18 , comprising:
a reflective material disposed between a first sidewall of the corrosion resistive layer and a second sidewall of the corrosion resistive layer.
20. The device of claim 19 , wherein the second dielectric layer is disposed between the reflective structure and the reflective material.