Laser integration techniques
Described herein are one or more methods for integrating an optical component into an integrated photonics device. The die including a light source, an outcoupler, or both, may be bonded to a wafer having a cavity. The die can be encapsulated using an insulating material, such as an overmold, that surrounds its edges. Another (or the same) insulating material can surround conductive posts. Portions of the die, the overmold, and optionally, the conductive posts can be removed using a grinding and polishing process to create a planar top surface. The planar top surface enables flip-chip bonding and an improved connection to a heat sink. The process can continue with forming one or more additional conductive layers and/or insulating layers and electrically connecting the p-side and n-side contacts of the laser to a source.
1. An integrated photonics device including:
a die including a laser, the laser including an n-layer and a p-layer;
a wafer including a cavity, the cavity including a bottom, wherein the p-layer of the laser is located closer to the bottom of the cavity than the n-layer of the laser when the die is attached to the wafer;
a first conductive layer adjacent to the wafer;
a first insulating material that surrounds at least portions of sides of the die;
a plurality of conductive posts, wherein the plurality of conductive posts include a first conductive post electrically connected to the first conductive layer;
a second insulating material that surrounds the plurality of conductive posts; and
a plurality of electrical connections, the plurality of electrical connections connecting the laser to an electrical chip.
2. The integrated photonics device of claim 1 , wherein the plurality of electrical connections include a plurality of conductive bumps or a plurality of wire bonds.
3. The integrated photonics device of claim 1 , wherein a width of the die is greater than a width of the cavity, and wherein the die includes a plurality of ledges.
4. The integrated photonics device of claim 3 , wherein the first insulating material seals the plurality of ledges.
5. The integrated photonics device of claim 1 , wherein the die includes an opening, and a second conductive layer located within the opening,
further wherein the first conductive layer includes a first portion and a second portion, the second portion of the first conductive layer is electrically connected to the second conductive layer, and
further wherein the plurality of electrical connections connect a contact to the n-layer of the laser and a contact to the p-layer of the laser to the electrical chip at a same side of the die.
6. The integrated photonics device of claim 5 , wherein the plurality of conductive posts include a second conductive post electrically connected to the second conductive layer.
7. The integrated photonics device of claim 1 , wherein the plurality of conductive posts includes a third conductive post on the die.
8. The integrated photonics device of claim 1 , wherein the die further includes an outcoupler.
9. The integrated photonics device of claim 1 , further comprising:
one or more components; and
one or more caps, wherein the one or more caps are attached to the wafer, wherein the one or more caps protect the one or more components and are located between the one or more components and the second insulating material.
10. The integrated photonics device of claim 9 , wherein the one or more components include a waveguide, and further wherein the one or more caps protect an etched facet of the waveguide.
11. The integrated photonics device of claim 9 , further comprising:
the one or more caps and a plurality of heaters, wherein the one or more caps are located between the second insulating material and the plurality of heaters, and
further wherein the one or more caps are attached to the wafer and create an enclosed region including the plurality of heaters.