Substitute sample, method for determining control parameter of processing, and measurement system
A sample simulates a processing state of a semiconductor sample and is measured by a measurement device. The sample includes: a first surface formed at a first height when viewed from a sample surface; a second surface formed at a second height higher than the first height; and a plurality of inflow parts which allow a particle for performing processing on the first surface to flow between the first surface and the second surface. The processing by the particle flowing from the inflow parts is superimposed in at least a part of a region to be processed on the first surface, and the region where the processing is superimposed on the first surface is measured by the measurement device.
1. A sample which simulates a processing state of a semiconductor sample and is measured by a measurement device, the sample comprising:
a first surface formed at a first height when viewed from a sample surface;
a second surface formed at a second height higher than the first height; and
a plurality of inflow parts which allow a particle for performing processing on the first surface to flow between the first surface and the second surface,
wherein the processing by the particle flowing from the plurality of inflow parts is superimposed in at least a part of a region to be processed on the first surface, and
the region where the processing is superimposed on the first surface is measured by the measurement device.
2. The sample according to claim 1 , wherein
the first surface and the second surface are connected by walls arranged in at least two directions, and
the inflow part is formed as a gap which communicates a space formed between the first surface and the second surface with an outside.
3. The sample according to claim 1 , wherein
the inflow part is formed on the second surface and is a hole which communicates the space formed between the first surface and the second surface with the outside.
4. The sample according to claim 1 , wherein
partial regions measured by the measurement device in a region where the processing is superimposed are provided at at least two locations in the one sample.
5. The sample according to claim 1 , comprising:
a plurality of samples having different distances between the inflow parts,
wherein partial regions measured by the measurement device in a region where the processing is superimposed are provided at at least one location in each of the plurality of samples.
6. A method for determining a control parameter of processing performed on a sample executed by a computer, wherein
the computer includes an arithmetic device, a storage device connected to the arithmetic device, and an interface connected to the computer and connected with an external device, and
the storage device stores a first model indicating a correlation between a first processing output obtained by measuring a first sample which is subjected to the processing and is used for manufacturing and a second processing output obtained by measuring a second sample which is subjected to the processing and simulates the first sample,
the method comprising:
a first step of causing the arithmetic device to generate a second model indicating a correlation between a control parameter of the processing performed on the second sample and the second processing output by executing a learning processing and to store the second model in the storage device; and
a second step of causing the arithmetic device to calculate a target control parameter of the processing performed on the first sample based on a target processing output that is the first processing output as a target, the first model, and the second model,
wherein the second sample includes
a first surface formed at a first height when viewed from a sample surface,
a second surface formed at a second height higher than the first height, and
a plurality of inflow parts which allow a particle for performing processing on the first surface to flow between the first surface and the second surface.
7. The method for determining a control parameter of processing according to claim 6 , wherein
the inflow part is formed in a gap communicating a space formed between the first surface and the second surface with an outside or formed in the second surface and is a hole which communicates the space formed between the first surface and the second surface with the outside.
8. The method for determining a control parameter of processing according to claim 6 , wherein
partial regions of at least two locations in the one second sample in a region where the processing is superimposed are measured to obtain the second processing output.
9. The method for determining a control parameter of processing according to claim 6 , wherein
the second sample includes a plurality of second samples having different distances between the inflow parts, and
a portion of at least one location in each of the plurality of second samples in a region where the processing is superimposed is measured to obtain the second processing output.
10. The method for determining a control parameter of processing according to claim 6 , wherein
the arithmetic device is accessible to a database storing data in which the control parameter of the processing performed on the second sample is associated with the second processing output, and
in the first step, the arithmetic device generates the second model by executing learning processing using the database.
11. The method for determining a control parameter of processing according to claim 10 , wherein
the second step includes
causing the arithmetic device to calculate the second processing output corresponding to the target processing output based on the first model,
causing the arithmetic device to calculate an estimated control parameter which is a control parameter having a possibility of obtaining the second processing output corresponding to the target processing output based on the second model, and
causing the arithmetic device to output the estimated control parameter as the target control parameter.
12. The method for determining a control parameter of processing according to claim 10 , wherein
a processing device for performing the processing is connected to the computer, and
the second processing output includes measurement values of a plurality of elements,
the method comprising:
causing the arithmetic device to analyze a distribution of the second processing output in a space with each of the plurality of elements as an axis with reference to the database;
causing the arithmetic device to determine a second processing output of an adding target based on a result of the analysis;
causing the arithmetic device to calculate a new control parameter for the processing performed on the second sample by using the second processing output of the adding target and the second model;
causing the arithmetic device to input the new control parameter to the processing device;
causing the arithmetic device to obtain a new second processing output from the processing device which has performed the processing based on the new control parameter; and
causing the arithmetic device to register the new control parameter and the new second processing output in the database in association with each other.
13. A system comprising:
a processing device for performing a processing on a sample;
a measurement device for measuring a result of the processing performed on the sample; and
a computer for determining a control parameter of the processing performed on the sample,
wherein the computer includes
a storage part which stores a first model indicating a correlation between a first processing output obtained by measuring a first sample which is subjected to the processing and is used for manufacturing and a second processing output obtained by measuring a second sample which is subjected to the processing and is easier to measure than the first sample and a second model indicating a correlation between a control parameter of the processing performed on the second sample and the second processing output, and
an analysis part which calculates a target control parameter of the processing performed on the first sample based on a target processing output that is the first processing output as a target, the first model, and the second model, and
the sample includes
a first surface formed at a first height when viewed from a sample surface,
a second surface formed at a second height higher than the first height, and
a plurality of inflow parts which allow a particle for performing processing on the first surface to flow between the first surface and the second surface.