PATTERN FORMATION MATERIAL AND PATTERN FORMATION METHOD
According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.
1 .- 7 . (canceled)
8 . A pattern formation method, comprising:
providing a resist layer on a substrate, the resist layer having an opening;
providing a polymer layer including a pattern formation material on the resist layer, the pattern formation material including a pattern formation polymer;
forming a block copolymer layer in the opening of the resist layer, the block copolymer layer including a plurality of blocks, one of the plurality of blocks including a plurality of polymer components, the plurality of polymer components being of mutually-different types, a solubility parameter of the pattern formation polymer being between a maximum value and a minimum value of a solubility parameter of the plurality of polymer components;
forming a first domain and a second domain by causing micro phase separation of the block copolymer layer, an etching resistance of the second domain being weaker than an etching resistance of the first domain; and
etching the second domain, the polymer layer, and the substrate.
9 . The method according to claim 8 , wherein the micro phase separation includes annealing.
10 . The method according to claim 8 , wherein
the pattern formation polymer includes:
a main chain including an acrylic backbone; and
a side chain.
11 . The method according to claim 8 , wherein the pattern formation polymer includes a homopolymer.
12 . The method according to claim 8 , wherein the pattern formation polymer includes a random copolymer.
13 . The method according to claim 8 , wherein
the side chain includes an alkyl group, and
the number of carbons included in the alkyl group is not less than 1 and not more than 10.
14 . The method according to claim 13 , wherein the side chain includes a branch.
15 . The method according to claim 13 , wherein the alkyl group is an iso form.
16 . The method according to claim 13 , wherein the block copolymer includes a diblock copolymer.