Semiconductor devices including shielding layer and methods of manufacturing semiconductor devices
In one example, a semiconductor structure or device comprises a substrate comprising a conductive structure having a top side and a first shielding terminal on the top side of the conductive structure, an electronic component on the top side of the conductive structure, a package body on the top side of the conductive structure and contacting a side of the electronic component, a shield on a top side of the package body and a lateral side of the package body, and a shield interconnect coupling the shield to the first shielding terminal of the conductive structure. Other examples and related methods are also disclosed herein.
1. A semiconductor structure, comprising:
a substrate comprising a conductive structure having a top side and a first shielding terminal on the top side of the conductive structure;
an electronic component on the top side of the conductive structure;
a package body on the top side of the conductive structure and contacting a side of the electronic component;
a shield on a top side of the package body and a lateral side of the package body; and
a shield interconnect coupling the shield to the first shielding terminal of the conductive structure;
wherein the conductive structure comprises a horizontally extending support bar having a horizontal width greater than a vertical height, and the first shielding terminal is on the horizontally extending support bar; and
wherein:
the conductive structure comprises a paddle adjacent to the electronic component;
the first shielding terminal is on one of a support bar or a lead of the conductive structure;
a second shielding terminal is on the paddle; and
the shield interconnect is coupled to the first shielding terminal, the second shielding terminal, and the shield.
2. The semiconductor structure of claim 1 , wherein the shield comprises a first shield layer and a second shield layer on the first shield layer.
3. The semiconductor structure of claim 1 , further comprising a dielectric structure coupled to the conductive structure.
4. The semiconductor structure of claim 3 , wherein the dielectric structure comprises part of the package body as a continuous material.
5. The semiconductor structure of claim 3 , wherein the dielectric structure is separate from the package body.
6. The semiconductor structure of claim 1 , wherein the shield contacts a groove in the package body at a lateral side of the package body.
7. The semiconductor structure of claim 2 , wherein the first shield layer comprises a ridge and a ridge ledge at a lateral side of the package body, and the second shield layer is on the ridge ledge at the lateral side of the package body, wherein a portion of the package body is between the ridge ledge and the conductive structure.
8. The semiconductor structure of claim 1 , wherein the horizontally extending support bar has a division bar extending at an angle with respect to the horizontally extending support bar, and the first shielding terminal is on the division bar.
9. The semiconductor structure of claim 1 , wherein the shield interconnect comprises a wire.
10. The semiconductor structure of claim 1 , wherein the conductive structure comprises a paddle adjacent to the electronic component, the first shielding terminal is on the paddle and the shield interconnect couples the shield to the paddle.
11. A method, comprising:
providing a substrate comprising a dielectric structure and a conductive structure having a top side and a shielding terminal on the top side of the conductive structure;
providing an electronic component on the top side of the conductive structure;
providing a package body on the top side of the conductive structure and contacting a side of the electronic component;
providing a via in the package body from a top side of the package body to the shielding terminal;
providing a shield on a top side of the package body and a lateral side of the package body, wherein the shield includes a shield interconnect in the via connecting the shield to the shielding terminal of the conductive structure; and at least one of:
(a) exposing the shielding terminal prior to providing the shield on the top side of the package body and a side surface of the package body, or
(b) providing a groove in the package body at the lateral side of the package body wherein the package body is exposed under the shield at the lateral side of the package body.
12. The method of claim 11 , further comprising exposing the shielding terminal prior to providing the shield on the top side of the package body and the side surface of the package body.
13. The method of claim 11 , further comprising providing a seed layer on the package body prior to providing the shield on the top side of the package body and the side surface of the package body.
14. The method of claim 11 , wherein the shield comprises a first shield layer on the top side of the package body and the side surface of the package body and a second shield layer on the first shield layer.
15. The method of claim 14 , further comprising providing the groove in the package body at the lateral side of the package body wherein the package body is exposed under the shield at the lateral side of the package body.