Chip package with fan-out structure
A chip package is provided. The chip package includes a semiconductor die and a protection layer surrounding the semiconductor die. The chip package also includes a first dielectric layer over the semiconductor die and the protection layer. The first dielectric layer has an upper surface with cutting scratches. The chip package further includes a conductive layer over the first dielectric layer. In addition, the chip package includes a second dielectric layer over the conductive layer and filling some of the cutting scratches. Bottoms of the cutting scratches are positioned at height levels that are lower than a topmost surface of the first dielectric layer and higher than a topmost surface of the semiconductor die.
1. A chip package, comprising:
a semiconductor die;
a protection layer surrounding the semiconductor die;
a first dielectric layer over the semiconductor die and the protection layer, wherein the first dielectric layer has an upper surface with cutting scratches;
a conductive layer over the first dielectric layer, wherein the conductive layer extends across a first plurality of the cutting scratches; and
a second dielectric layer over the conductive layer and filling a second plurality of the cutting scratches, wherein bottoms of the second plurality of the cutting scratches are positioned at height levels that are lower than a topmost surface of the first dielectric layer and higher than a topmost surface of the semiconductor die.
2. The chip package as claimed in claim 1 , further comprising a conductive structure in the protection layer and separated from the semiconductor die by a portion of the protection layer, wherein the protection layer has a recessed portion between the semiconductor die and the conductive structure.
3. The chip package as claimed in claim 2 , wherein the first dielectric layer fills the recessed portion of the protection layer.
4. The chip package as claimed in claim 2 , wherein a top surface of the conductive structure is between the topmost surface of the first dielectric layer and a bottommost surface of the first dielectric layer.
5. The chip package as claimed in claim 1 , wherein an interface between the second dielectric layer and the first dielectric layer has an undulate morphology.
6. The chip package as claimed in claim 1 , wherein widths of the cutting scratches are substantially the same.
7. The chip package as claimed in claim 1 , wherein each of the cutting scratches has a width in a range from about 20 μm to about 60 μm, and each of the cutting scratches has a depth in a range from about 0.05 μm to about 0.1 μm.
8. The chip package as claimed in claim 1 , wherein the conductive layer fills the first plurality of the cutting scratches.
9. The chip package as claimed in claim 1 , wherein intervals between the cutting scratches are substantially the same.
10. The chip package as claimed in claim 1 , wherein the second dielectric layer is in direct contact with sidewalls of second plurality of the cutting scratches.
11. A chip package, comprising:
a semiconductor die;
a protection layer surrounding the semiconductor die;
a first dielectric layer over the semiconductor die and the protection layer;
a conductive layer over the first dielectric layer, wherein a topmost surface of the conductive layer is higher than a topmost surface of the first dielectric layer; and
a second dielectric layer over the first dielectric layer and the conductive layer, wherein the second dielectric layer has a plurality of protruding portions extending into the first dielectric layer, bottoms of the protruding portions are positioned at height levels that are lower than the topmost surface of the first dielectric layer and higher than a topmost surface of the semiconductor die, and a topmost surface of the second dielectric layer is higher than a topmost surface of the conductive layer.
12. The chip package as claimed in claim 11 , wherein widths of the protruding portions of the second dielectric layer are substantially the same.
13. The chip package as claimed in claim 11 , wherein each of the protruding portions of the second dielectric layer has a width in a range from about 20 μm to about 60 μm, and each of the protruding portions of the conductive layer has a height in a range from about 0.05 μm to about 0.1 μm.
14. The chip package as claimed in claim 11 , wherein the conductive layer has a plurality of second protruding portions extending into the first dielectric layer.
15. The chip package as claimed in claim 14 , wherein a width of each of the protruding portions of the second dielectric layer is substantially equal to a width of each of the second protruding portions of the conductive layer.
16. A chip package, comprising:
a semiconductor die;
a protection layer surrounding the semiconductor die;
a first dielectric layer over the semiconductor die and the protection layer; and
a conductive layer over the first dielectric layer, wherein a topmost surface of the conductive layer is higher than a topmost surface of the first dielectric layer; and
a second dielectric layer over the first dielectric layer and the conductive layer, wherein an interface between the second dielectric layer and the first dielectric layer has an undulate morphology, bottoms of the interface with the undulated morphology are positioned at height levels that are lower than the topmost surface of the first dielectric layer and higher than a topmost surface of the semiconductor die, and a topmost surface of the second dielectric layer is higher than a topmost surface of the conductive layer.
17. The chip package as claimed in claim 16 , wherein an interface between the conductive layer and the first dielectric layer has a second undulate morphology.
18. The chip package as claimed in claim 17 , wherein the undulate morphology and the second undulate morphology are substantially the same.
19. The chip package as claimed in claim 16 , further comprising a conductive structure in the protection layer and separated from the semiconductor die by a portion of the protection layer, wherein the protection layer has a recessed portion between the semiconductor die and the conductive structure.
20. The chip package as claimed in claim 16 , further comprising a conductive structure in the protection layer and separated from the semiconductor die by a portion of the protection layer, wherein a top surface of the conductive structure is between the topmost surface of the first dielectric layer and a bottommost surface of the first dielectric layer.