Apparatus for spin injection enhancement and method of making the same
A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.
1. A switching device, comprising:
a spin-orbit coupling (SOC) layer;
a ferromagnetic (FM) layer; and
a normal metal (NM) layer having a thickness of between about 20 nm and about 1 μm sandwiched between the SOC layer and the FM layer, the NM layer configured to funnel spins from a large area of the SOC layer into a small area of the FM layer.
2. The switching device of claim 1 , further comprising a first terminal disposed near a first end of the SOC layer and a second terminal disposed near a second end of the SOC layer.
3. The switching device of claim 2 , the SOC layer comprises a Giant Spin Hall Effect (GSHE) material.
4. The switching device of claim 3 , the NM layer has a resistivity of between about 1.5×10 −8 Ω·m to about 3.0×10 −8 Ω·m.
5. The switching device of claim 4 , wherein the NM layer comprises one of copper, aluminum, silver, gold, or an alloy constituting a combination thereof.
6. The switching device of claim 3 , wherein the GSHE is a transitional metal and is selected from the group consisting of tungsten, tantalum, platinum, and an alloy constituting a combination thereof.
7. The switching device of claim 2 , the SOC layer comprises a topological insulator and is selected from the group consisting of Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 , (Bi 0.5 Sb 0.5 ) 2 Te 3 , α-Sn, and a composite constituting a combination thereof.
8. The switching device of claim 2 , the SOC layer comprises a III-IV semiconductor and is selected from the group consisting of InAs, GaAs, and a composite constituting a combination thereof.
9. The switching device of claim 2 , the SOC layer comprises a perovskites oxide and is selected from the group consisting of LaAlO 3 |SrTiO 3 interface, SrIrO 3 , and an oxide composite constituting a combination thereof.
10. The switching device of claim 2 , wherein the ratio of J s /(θ SH J c ) as a function of spin diffusion length (λ n ) is substantially higher based on a charge current density flowing in the SOC layer (J′ c ) as compared to a charge current density flowing through the first and second terminals (J c ).