Chemical vapor deposition diamond (CVDD) wires for thermal transport

1. A method for forming a board assembly comprising:

identifying a location of a hot-spot on the semiconductor die;

attaching a first Chemical Vapor Deposition Diamond (CVDD) coated wire to a first circuit board in a location corresponding to the location of the identified hot-spot;

applying a layer of thermally conductive paste over the first CVDD-coated wire; and

placing a semiconductor die over the layer of thermally conductive paste such that a surface of the semiconductor die is in direct contact with the layer of thermally conductive paste and such that a portion of the first CVDD-coated wire extends between the identified location of the hot-spot on the semiconductor die and the first circuit board.

2. The method of claim 1 further comprising:

cutting a first slot in the circuit board in a location corresponding to the location of the identified hot-spot,

wherein the attaching a first CVDD-coated wire includes inserting the first CVD-coated wire into the first slot.

3. The method of claim 1 further comprising:

cutting a first slot in the circuit board in a location corresponding to the location of the identified hot-spot; and

dispensing adhesive within the first slot, and

wherein the attaching the first CVDD-coated wire includes inserting the first CVD-coated wire into the first slot.

4. The method of claim 2 further comprising:

cutting a second slot in the circuit board in a location corresponding to the location of the identified hot-spot; and

inserting a second CVDD-coated wire into the second slot, the second CVDD-coated wire crossing the first CVDD-coated wire,

wherein the layer of thermally conductive paste is in direct contact with a portion of the second CVDD-coated wire, and

wherein a portion of the second CVDD-coated wire extends between the hot-spot and the first circuit board.

5. The method of claim 1 further comprising coupling one or more heat sink to the first CVDD-coated wire.

6. The method of claim 1 further comprising coupling a switch to one end of the first CVDD-coated wire and coupling the other end of the first CVDD-coated wire to ground, the switch operable for passing a current through the first CVDD-coated wire to warm-up the semiconductor die.

7. The method of claim 1 wherein a first end of the first CVDD-coated wire extends past the edge of the circuit board.

8. The method of claim 1 wherein both ends of the first CVDD-coated wire extend past the edge of the circuit board.

9. The method of claim 1 further comprising:

coupling a heat sink to the first CVDD-coated wire, the heat sink including a top plate that directly overlies and is in contact with a portion of the first CVDD-coated wire that extends past an edge of the circuit board, the heat sink including a bottom plate that is coupled to the top plate, the bottom plate directly underlying and in contact with the portion of the first-CVDD-coated wire that extends past the edge of the circuit board.

10. The method of claim 1 further comprising coupling a second circuit board to the first circuit board such that the semiconductor die extends between the first circuit board and the second circuit board.

11. The method of claim 1 wherein the thermally conductive paste comprises diamond paste.

12. The method of claim 1 wherein the first CVDD-coated wire comprises tungsten.

13. The method of claim 1 wherein more than ninety percent of the layer of thermally conductive paste is CVDD particles having a size of less than 0.5 microns, and the remaining portion of the thermally conductive paste comprises a thermally conductive material.

14. A board assembly comprising:

a first circuit board;

a semiconductor die electrically coupled to the first circuit board;

a first Chemical Vapor Deposition Diamond (CVDD) coated wire, a portion of the first CVDD-coated wire extending between a hot-spot on the semiconductor die and the first circuit board; and

a layer of thermally conductive paste disposed between the hot-spot on the semiconductor die and the first circuit board, the layer of thermally conductive paste in direct contact with a portion of the CVDD-coated wire.

15. The board assembly of claim 14 wherein the first circuit board includes a first slot, the CVDD-coated wire extending within the first slot.

16. The board assembly of claim 15 further comprising:

a second CVDD-coated wire extending within a second slot in the first circuit board, the second CVDD-coated wire crossing the first CVDD-coated wire, a portion of the second CVDD-coated wire extending between the hot-spot and the first circuit board,

wherein the layer of thermally conductive paste is in direct contact with a portion of the second CVDD-coated wire where the second CVDD-coated wire crosses the first CVDD-coated wire.

17. The board assembly of claim 14 further comprising a heat sink coupled to the first CVDD-coated wire.

18. The board assembly of claim 14 further comprising a switch coupled to one end of the first CVDD-coated wire, the switch operable for passing a current through the first CVDD-coated wire.

19. The board assembly of claim 14 wherein both ends of the first CVDD-coated wire extend past an edge of the first circuit board.

20. A board assembly comprising:

a first circuit board;

a second circuit board overlying the first circuit board;

a semiconductor die electrically coupled to the first circuit board and disposed between the first and second circuit board;

a first Chemical Vapor Deposition Diamond (CVDD) coated wire extending within a first slot in the first circuit board, a portion of the first CVDD-coated wire extending between a hot-spot on the semiconductor die and the first circuit board; and

a layer of thermally conductive paste disposed between the hot-spot on the semiconductor die and the first circuit board, the layer of thermally conductive paste in direct contact with a portion of the CVDD-coated wire; and

one or more heat sink coupled to the first CVDD-coated wire and to the first circuit board.