Vertical memory device with a double word line structure

1. A memory device, comprising:

a substrate;

a bit line which is vertically oriented from the substrate;

a plate line which is spaced apart from the bit line and vertically oriented from the substrate; and

a memory cell including a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line,

wherein the transistor includes:

an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and

a pair of word lines oriented to intersect with the active layer,

wherein the pair of word lines comprises:

a line-shaped lower word line disposed over a lower surface of the active layer; and

a line-shaped upper word line disposed over an upper surface of the active layer.

2. The memory device of claim 1 , wherein the active layer of the transistor includes:

a first source/drain region coupled to the bit line;

a second source/drain region coupled to the capacitor; and

a channel between the first source/drain region and the second source/drain region, and

the first source/drain region, the channel, and the second source/drain region are positioned in a lateral arrangement between the bit line and the capacitor.

3. The memory device of claim 2 , wherein the line-shaped lower word line and the line-shaped upper word line are vertically stacked with the channel of the transistor therebetween.

4. The memory device of claim 2 , wherein the transistor further includes:

a first gate dielectric layer is formed between the line-shaped upper word line and the channel; and

a second gate dielectric layer is formed between the line-shaped lower word line and the channel.

5. The memory device of claim 1 , wherein the line-shaped lower word line and the line-shaped upper word line are applied with different voltages.

6. The memory device of claim 1 , wherein the capacitor includes:

a first node coupled to the transistor;

a second node coupled to the plate line; and

a dielectric material between the first node and the second node,

wherein the first node, the dielectric material, and the second node are positioned in a lateral arrangement between the transistor and the plate line.

7. The memory device of claim 6 , wherein the first node of the capacitor has a three-dimensional structure, and the three-dimensional structure is a laterally oriented to be parallel to the substrate.

8. The memory device of claim 6 , wherein the first node of the capacitor has a lateral cylindrical shape, a lateral pillar shape, or a pylinder shape which is a merged form of the lateral cylindrical shape and the lateral pillar shape.

9. The memory device of claim 6 , wherein the first node of the capacitor has a lateral cylindrical shape, and

the second node of the capacitor includes:

an inner second node which is laterally oriented from the plate line and extending into the cylindrical shape of the first node; and

a plurality of outer second nodes which are laterally oriented from the plate line and surround an outside of the cylindrical shape of the first node.

10. The memory device of claim 1 , wherein the line-shaped lower word line and the line-shaped upper word line are laterally spaced apart from the bit line, the plate line, and the capacitor.

11. The memory device of claim 1 , wherein the substrate includes a peripheral circuit portion for controlling the memory cell, and the peripheral circuit portion is formed under the memory cell.

12. The memory device of claim 1 , wherein the substrate includes a peripheral circuit portion for controlling the memory cell, and the peripheral circuit portion is formed over the memory cell.

13. The memory device of claim 1 , further comprising:

a neighboring bit line which is laterally spaced apart from the bit line and vertically oriented from the substrate; and

a neighboring memory cell which is stacked in a direction perpendicular to the substrate between the neighboring bit line and the plate line,

wherein the memory cell and the neighboring memory cell are laterally arranged in a mirror-like structure sharing the plate line.

14. The memory device of claim 1 , further comprising:

a neighboring plate line which is laterally spaced apart from the plate line and vertically oriented from the substrate; and

a neighboring memory cell which is stacked in a direction perpendicular to the substrate between the neighboring plate line and the bit line,

wherein the memory cell and the neighboring memory cell are laterally arranged in a mirror-like structure sharing the bit line.

15. The memory device of claim 1 , further comprising:

a neighboring bit line which is laterally spaced apart from the bit line and vertically oriented from the substrate; and

a neighboring memory cell which is stacked in a direction perpendicular to the substrate between the neighboring bit line and the plate line,

wherein the neighboring memory cell includes:

a neighboring transistor including a neighboring active layer which is laterally oriented to be parallel to the substrate between the neighboring bit line and the plate line; and

a neighboring capacitor which is laterally oriented to be parallel to the substrate between the neighboring transistor and the plate line,

wherein the line-shaped lower word line is shared by the neighboring transistor and the transistor, and

wherein the line-shaped upper word line is shared by the neighboring transistor and the transistor.

16. The memory device of claim 1 ,

wherein the line-shaped upper word line and the line-shaped lower word line are set to the same potential, and

wherein the line-shaped upper word line and the line-shaped lower word line are electrically connected to each other.

17. A memory device, comprising:

a substrate;

a bit line extending in a first direction from the substrate, the first direction perpendicular to a surface of the substrate;

an active layer extending in a second direction from the bit line, the second direction parallel to the surface of the substrate, the active layer having a lower surface and an upper surface which are opposite to each other in the first direction;

a capacitor electrically connected to the active layer; and

a double word line structure extending in a third direction across the active layer, the third direction being parallel to the surface of the substrate and intersecting the second direction;

wherein the double word line structure comprising:

a lower word line disposed over the lower surface of the active layer; and

an upper word line disposed over the upper surface of the active layer,

wherein the lower and upper word lines are set to the same potential and are electrically connected to each other.

18. The memory device of claim 17 , wherein the capacitor includes:

a first node coupled to the active layer;

a second node on the first node; and

a dielectric material between the first node and the second node.

19. The memory device of claim 18 , wherein the first node of the capacitor has a lateral cylindrical shape, and

the second node of the capacitor includes:

an inner second node extending into the cylindrical shape of the first node; and

a plurality of outer second nodes surrounding an outside of the cylindrical shape of the first node.

20. The memory device of claim 17 , further comprising:

a peripheral circuit portion; and

a memory cell array including a plurality of memory cells,

wherein each of the memory cell including the bit line, the capacitor, the double word line structure, and the active layer, and

wherein the memory cell array and the peripheral circuit portion are stacked in the first direction.