Semiconductor nanoparticles and method of producing semiconductor nanoparticles
A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M 1 , M 2 , and Z. M 1 is at least one element selected from the group consisting of Ag, Cu, and Au. M 2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
1. A method of producing semiconductor nanoparticles, comprising:
providing a dispersion by dispersing primary semiconductor nanoparticles into a solvent containing a surface modifier, each of the primary semiconductor nanoparticles being made of a semiconductor that contains M 1 , M 2 , and Z, wherein M 1 is at least one element selected from the group consisting of Ag, Cu, and Au, M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and Z is at least one element selected from the group consisting of S, Se, and Te, and wherein the surface modifier is disposed on a surface of the primary semiconductor nanoparticles; and
adding, to the dispersion, a compound containing a Group 13 element and one of an elemental substance of a Group 16 element and a compound containing the Group 16 element to form a semiconductor layer that consists essentially of the Group 13 element and the Group 16 element on a surface of each of the primary semiconductor nanoparticles,
wherein a photoluminescence lifetime of the semiconductor nanoparticles is 200 ns or less, and a photoluminescence spectrum at a band-edge emission of the semiconductor nanoparticles has a peak at a wavelength from 430 nm to 680 nm with a full width at half maximum of 50 nm or less.
2. The method of producing semiconductor nanoparticles according to claim 1 , wherein the compound containing the Group 16 element is dibenzyldisulfide.
3. The method of producing semiconductor nanoparticles according to claim 1 , further comprising, after the adding:
increasing a temperature of the dispersion by heating at a predetermined rate up to a peak temperature that is in a range of 200° C. to 290° C., and holding the dispersion at the peak temperature for a predetermined period of time.
4. The method of producing semiconductor nanoparticles according to claim 3 , wherein the elemental substance of the Group 16 element is an elemental sulfur, and the period of time for holding the dispersion at the peak temperature is not less than 40 minutes and not more than 60 minutes.
5. The method of producing semiconductor nanoparticles according to claim 1 , wherein the dispersion contains n-tetradecylamine.
6. The method of producing semiconductor nanoparticles according to claim 1 , wherein the surface modifier is at least one selected from nitrogen-containing compounds having a hydrocarbon group with a carbon number of 4 to 20; or at least one selected from sulfur-containing compounds having a hydrocarbon group with a carbon number of 4 to 20;
or a combination of at least one selected from the nitrogen-containing compounds having a hydrocarbon group with a carbon number of 4 to 20 and at least one selected from the sulfur-containing compounds having a hydrocarbon group with a carbon number of 4 to 20.