SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatus
According to the invention, a SiC single crystal growth crucible includes: a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion, in which the raw material accommodation portion has a tapered portion, an inner surface of which is tapered off downward.
1. A SiC single crystal growth crucible comprising:
a raw material accommodation portion which accommodates a SiC raw material; and
a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion,
wherein the raw material accommodation portion has a body portion on an upper side and a tapered portion on a lower side,
an inner surface of the body portion has a constant width,
an inner surface of the tapered portion is tapered off downward,
a bottom portion of the raw material accommodation portion is a bottom of the SiC single crystal growth crucible,
the tapered portion has a conical shape which is continuously and linearly tapered off, and
an outer surface of the tapered portion of the raw material accommodation portion is tapered off downward.
2. A SiC single crystal manufacturing apparatus comprising:
the SiC single crystal growth crucible according to claim 1 ; and
a heating device which heats the SiC single crystal growth crucible,
wherein the heating device is disposed such that a heating center is positioned in a range of the tapered portion of the raw material accommodation portion.
3. The SiC single crystal manufacturing apparatus according to claim 2 ,
wherein the heating center is a portion of an outer surface of the raw material accommodation portion where quantity of heat transmitted from the heating device is the greatest, and
a height of a taper start position of the tapered portion with respect to the heating center is 60 mm or less.
4. The SiC single crystal growth crucible according to claim 1 , wherein the raw material accommodation portion is made of graphite or tantalum carbide.
5. The SiC single crystal growth crucible according to claim 1 ,
wherein a side wall of the body portion is symmetrical with respect to a central axis of the raw material accommodation portion, and
a side wall of the tapered portion is symmetrical with respect to the central axis of the raw material accommodation portion.
6. The SiC single crystal growth crucible according to claim 1 ,
wherein the body portion and the tapered portion are continuum.