Liquid crystal display device
It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
1. A liquid crystal display device, comprising:
a top gate transistor;
a first insulating layer;
a second insulating layer;
a common electrode;
an auxiliary wiring;
a pixel electrode; and
a liquid crystal layer,
wherein the first insulating layer and the second insulating layer are stacked so as to have a region sandwiching a source electrode of the top gate transistor and a region sandwiching a drain electrode of the top gate transistor,
wherein the first insulating layer and the second insulating layer each comprise organic material,
wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode,
wherein an orientation of the liquid crystal layer is controlled by an electric field generated between the pixel electrode and the common electrode,
wherein the liquid crystal layer is located above the pixel electrode and the common electrode,
wherein the pixel electrode and the common electrode each comprise ITO,
wherein the auxiliary wiring, the source electrode, and the drain electrode each comprise Al,
wherein the auxiliary wiring is in contact with the common electrode without a contact hole, and
wherein the first insulating layer comprises a region located above a gate electrode of the top gate transistor, a region located below the source electrode, a region located below the drain electrode, and a region located below the auxiliary wiring.
2. The liquid crystal display device according to claim 1 ,
wherein the top gate transistor comprises a polysilicon.
3. A liquid crystal display device, comprising:
a top gate transistor;
a first insulating layer;
a second insulating layer;
a common electrode;
an auxiliary wiring;
a pixel electrode; and
a liquid crystal material layer,
wherein the first insulating layer and the second insulating layer are stacked so as to have a region sandwiching a source electrode of the top gate transistor and a region sandwiching a drain electrode of the top gate transistor,
wherein the first insulating layer and the second insulating layer each comprise organic material,
wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode,
wherein an inclination of the liquid crystal material layer is controlled by an electric field generated between the pixel electrode and the common electrode,
wherein the liquid crystal material layer is located above the pixel electrode and the common electrode,
wherein the pixel electrode and the common electrode each comprise ITO,
wherein the auxiliary wiring, the source electrode, and the drain electrode each comprise Al,
wherein the auxiliary wiring is in contact with the common electrode without a contact hole, and
wherein the first insulating layer comprises a region located above a gate electrode of the top gate transistor, a region located below the source electrode, a region located below the drain electrode, and a region located below the auxiliary wiring.
4. The liquid crystal display device according to claim 3 ,
wherein the top gate transistor comprises a polysilicon.
5. A liquid crystal display device, comprising:
a top gate transistor;
a first insulating layer;
a second insulating layer;
a common electrode;
an auxiliary wiring;
a pixel electrode; and
a liquid crystal layer,
wherein the first insulating layer and the second insulating layer are stacked so as to have a region sandwiching a source electrode of the top gate transistor and a region sandwiching a drain electrode of the top gate transistor,
wherein the first insulating layer and the second insulating layer each comprise organic material,
wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode,
wherein an orientation of the liquid crystal layer is controlled by an electric field generated between the pixel electrode and the common electrode,
wherein the liquid crystal layer is located above the pixel electrode and the common electrode,
wherein the pixel electrode and the common electrode each comprise ITO,
wherein the auxiliary wiring, the source electrode, and the drain electrode each comprise Al,
wherein the auxiliary wiring is in contact with the common electrode without a contact hole,
wherein the first insulating layer comprises a region located above a gate electrode of the top gate transistor, a region located below the source electrode, a region located below the drain electrode, and a region located below the auxiliary wiring, and
wherein the auxiliary wiring overlaps with a flat upper surface of the first insulating layer.
6. The liquid crystal display device according to claim 5 ,
wherein the top gate transistor comprises a polysilicon.
7. A liquid crystal display device, comprising:
a top gate transistor;
a first insulating layer;
a second insulating layer;
a common electrode;
an auxiliary wiring;
a pixel electrode; and
a liquid crystal material layer,
wherein the first insulating layer and the second insulating layer are stacked so as to have a region sandwiching a source electrode of the top gate transistor and a region sandwiching a drain electrode of the top gate transistor,
wherein the first insulating layer and the second insulating layer each comprise organic material,
wherein the pixel electrode is electrically connected to one of the source electrode and the drain electrode,
wherein an inclination of the liquid crystal material layer is controlled by an electric field generated between the pixel electrode and the common electrode,
wherein the liquid crystal material layer is located above the pixel electrode and the common electrode,
wherein the pixel electrode and the common electrode each comprise ITO,
wherein the auxiliary wiring, the source electrode, and the drain electrode each comprise Al,
wherein the auxiliary wiring is in contact with the common electrode without a contact hole,
wherein the first insulating layer comprises a region located above a gate electrode of the top gate transistor, a region located below the source electrode, a region located below the drain electrode, and a region located below the auxiliary wiring, and
wherein the auxiliary wiring overlaps with a flat upper surface of the first insulating layer.
8. The liquid crystal display device according to claim 7 ,
wherein the top gate transistor comprises a polysilicon.