Selective deposition of etch-stop layer for enhanced patterning
Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M 2 ) on top of a base material (M 1 ) of a substrate, M 2 defining a pattern for etching M 1 in areas where M 2 is not present above M 1 . The method further includes operations for conformally capping the substrate with an oxide material (M 3 ) after adding M 2 , and for gap filling the substrate with filling material M 4 after the conformally capping. Further, a stop-etch material (M 5 ) is selectively grown on exposed surfaces of M 3 and not on surfaces of M 4 after the gap filling. Additionally, the method includes operations for removing M 4 from the substrate after selectively growing M 5 , and for etching the substrate after removing M 4 to transfer the pattern into M 1 . M 5 adds etching protection to enable deeper etching into M 1.
1. A method comprising:
adding a photo-resist material (M 2 ) on top of a base material (M 1 ) of a substrate, M 2 defining a pattern for etching M 1 in areas where M 2 is not present above M 1 ;
conformally capping the substrate with an oxide material (M 3 ) after adding M 2 ;
gap filling the substrate with filling material M 4 after the conformally capping;
converting filling material M 4 to filling material M 4 - 2 ;
selectively growing stop-etch material (M 5 ) on exposed surfaces of M 3 and not on surfaces of M 4 - 2 after the converting;
removing M 4 - 2 from the substrate after selectively growing M 5 ; and
etching the substrate after removing M 4 - 2 to transfer the pattern into M 1 .
2. The method as recited in claim 1 , wherein etching the substrate after removing M 4 further comprises:
etching exposed surfaces of M 3 in the substrate; and
continue etching the substrate to transfer the pattern into M 1 .
3. The method as recited in claim 1 , wherein M 2 is a carbon-based material.
4. The method as recited in claim 1 , wherein M 3 is one of silicon dioxide or aluminum oxide.
5. The method as recited in claim 1 , wherein M 4 is a CHx surface, wherein M 4 - 2 is a CFx surface.
6. The method as recited in claim 1 , wherein converting the filling material M 4 comprises:
converting M 4 to M 4 - 2 by fluorinating M 4 .
7. The method as recited in claim 1 , wherein M 5 is a metal oxide or oxynitride.
8. The method as recited in claim 1 , wherein conformally capping the substrate with M 3 further comprises:
performing a low-damage plasma enhanced atomic layer deposition.
9. The method as recited in claim 1 , wherein gap filling the substrate with filling material M 4 further comprises:
alternating depositing M 4 and etching M 4 to fill gaps in the substrate.
10. The method as recited in claim 1 , wherein selectively growing M 5 further comprises:
utilizing an atomic-layer-deposition process to deposit M 5 .
11. The method as recited in claim 1 , wherein removing M 4 - 2 from the substrate further comprises:
performing plasma ashing to remove M 4 - 2 .
12. The method as recited in claim 1 , wherein M 5 adds etching protection to enable deeper etching into M 1 than when utilizing M 2 without M 5 .
13. A semiconductor manufacturing apparatus comprising:
a processing chamber; and
a controller for controlling processing of a substrate within the processing chamber, wherein the controller causes the processing chamber to perform operations comprising:
adding a photo-resist material (M 2 ) on top of a base material (M 1 ) of a substrate, M 2 defining a pattern for etching M in areas where M 2 is not present above M 1 ;
conformally capping the substrate with an oxide material (M 3 ) after adding M 2 ;
gap filling the substrate with filling material M 4 after the conformally capping;
converting filling material M 4 to filling material M 4 - 2 ;
selectively growing stop-etch material (M 5 ) on exposed surfaces of M 3 and not on surfaces of M 4 - 2 after the converting;
removing M 4 - 2 from the substrate after selectively growing M 5 ; and
etching the substrate after removing M 4 - 2 to transfer the pattern into M 1 .
14. The semiconductor manufacturing apparatus as recited in claim 13 , wherein etching the substrate after removing M 4 further comprises:
etching exposed surfaces of M 3 in the substrate; and
continue etching the substrate to transfer the pattern into M 1 .
15. The semiconductor manufacturing apparatus as recited in claim 13 , wherein M 3 is one of silicon dioxide or aluminum oxide.
16. The semiconductor manufacturing apparatus as recited in claim 13 , wherein M 4 is a CHx surface, wherein M 4 - 2 is a CFx surface.
17. The semiconductor manufacturing apparatus as recited in claim 13 , wherein converting the filling material M 4 comprises converting M 4 to M 4 - 2 by fluorinating M 4 .
18. The semiconductor manufacturing apparatus as recited in claim 13 , wherein M 5 is a metal oxide.
19. The semiconductor manufacturing apparatus as recited in claim 13 , wherein gap filling the substrate with filling material M 4 further comprises:
alternating depositing M 4 and etching M 4 to fill gaps in the substrate.
20. The semiconductor manufacturing apparatus as recited in claim 13 , wherein removing M 4 - 2 from the substrate further comprises:
performing plasma ashing to remove M 4 - 2 .