EUV masks to prevent carbon contamination
An extreme ultra-violet (EUV) mask and method for fabricating the same is disclosed. For example, the EUV mask includes a substrate, a multi-layered mirror layer formed on the substrate, a metal capping layer formed on the multi-layered mirror layer, and a multi-layered absorber layer formed on the metal capping layer. The multi-layered absorber layer includes features etched into the multi-layered absorber layer to define structures on a semiconductor device.
1. An extreme ultra-violet (EUV) mask, comprising:
a substrate;
a multi-layered mirror layer formed on the substrate;
a metal capping layer formed on the multi-layered mirror layer; and
a multi-layered absorber layer comprising at least one oxide layer formed over the multi-layered mirror layer, wherein the multi-layered absorber layer comprises features etched into the multi-layered absorber layer to define structures on a semiconductor device.
2. The EUV mask of claim 1 , wherein the substrate comprises a low thermal expansion material.
3. The EUV mask of claim 1 , wherein the multi-layered absorber layer comprises a first metal oxide layer, a metal nitride layer, and a second metal oxide layer.
4. The EUV mask of claim 3 , wherein the first metal oxide layer comprises at least one of: Tantalum Boro-oxide (TaBO), Tantalum Pentoxide (Ta 2 O 5 ), Ruthenium oxide (RuO), Ruthenium Niobium Oxide (RuNbO), or Niobium Pentoxide (Nb 2 O 5 ).
5. The EUV mask of claim 4 , wherein the first metal oxide layer comprises TaBO having a thickness of approximately 1-2 nanometers.
6. The EUV mask of claim 4 , wherein the metal capping layer comprises TaBO or Ta 2 O 5 .
7. The EUV mask of claim 6 , wherein the metal capping layer comprises Ruthenium (Ru) or Ruthenium oxide (RuO).
8. The EUV mask of claim 7 , wherein the metal capping layer has a thickness of approximately 0-4 nanometers.
9. The EUV mask of claim 3 , wherein the metal nitride layer comprises a Tantalum Boro-nitride (TaBN).
10. The EUV mask of claim 3 , wherein the second metal oxide layer comprises Tantalum Boro-oxide (TaBO).
11. An extreme ultra-violet (EUV) mask, comprising:
a substrate;
a multi-layered mirror layer formed on the substrate;
a metal capping layer formed on the multi-layered mirror layer; and
an oxide containing absorber layer formed over the multi-layered mirror layer, wherein the oxide containing absorber layer comprises features etched into the oxide containing absorber layer to define structures on a semiconductor device.
12. The EUV mask of claim 11 , wherein the metal capping layer comprises Ruthenium (Ru) or Ruthenium oxide (RuO) having a thickness of approximately 0-4 nanometers.
13. The EUV mask of claim 11 , wherein the oxide containing absorber layer comprises a first layer of Tantalum Boro-oxide (TaBO), a layer of Tantalum Boro-nitride (TaBN), and a second layer of Tantalum Boro-oxide (TaBO) formed on a metal capping layer.
14. The EUV mask of claim 11 , wherein the oxide containing absorber layer comprises a layer of Tantalum Boro-oxide (TaBO), a layer of Tantalum Boro-nitride (TaBN), and a layer of Tantalum Pentoxide (Ta 2 O 5 ) formed on a metal capping layer.
15. The EUV mask of claim 11 , wherein the oxide containing absorber layer comprises a layer of Tantalum Boro-oxide (TaBO), a layer of Tantalum Boro-nitride (TaBN), and a layer of Ruthenium oxide (RuO).
16. The EUV mask of claim 11 , wherein the oxide containing absorber layer comprises a layer of Tantalum Boro-oxide (TaBO), a layer of Tantalum Boro-nitride (TaBN), and a layer of Ruthenium Niobium Oxide (RuNbO).
17. The EUV mask of claim 11 , wherein the oxide containing absorber layer comprises a layer of Tantalum Boro-oxide (TaBO), a layer of Tantalum Boro-nitride (TaBN), and a layer of Niobium Pentoxide (Nb 2 O 5 ).
18. A method for fabricating an extreme ultra-violet (EUV) mask, comprising:
depositing a multi-layered absorber layer containing at least one oxide layer on a multi-layered mirror layer;
defining features in the multi-layered mirror layer via an expose, bake, and develop process of photoresist coated on a hard mark layer; and
etching the multi-layered absorber layer to form the features in the multi-layered absorber layer to define structures on a semiconductor device.
19. The method of claim 18 , wherein the multi-layered absorber layer comprises layer of a first metal oxide layer, a layer of Tantalum Boro-nitride (TaBN), and Tantalum Boro-oxide (TaBO).
20. The method of claim 18 , wherein the first metal oxide layer comprises at least one of: Tantalum Boro-oxide (TaBO), Tantalum Pentoxide (Ta 2 O 5 ), Ruthenium oxide (RuO), Ruthenium Niobium Oxide (RuNbO), or Niobium Pentoxide (Nb 2 O 5 ).