IP Library Granted Patent US 11,658,011
Granted Patent B2
US 11,658,011 · App. 16/749,180 · Granted May 23, 2023

Plasma processing apparatus

Inventors: Yoshiharu Inoue (Yamaguchi, JP); Tetsuo Ono (Yamaguchi, JP); Michikazu Morimoto (Yamaguchi, JP); Masaki Fujii (Yamaguchi, JP); Masakazu Miyaji (Yamaguchi, JP)
Assignee: HITACHI HIGH-TECH CORPORATION
H01J37/32266H01J37/3266H01J37/32192H01J37/32935H01L21/3065H01L21/32137H01L21/67069H01L22/26H01J2237/2485H01J2237/334
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Quick Facts
Patent No.
US 11,658,011
App. No.
16/749,180
Granted
May 23, 2023
Kind
B2
Abstract

A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Claims (17)

1. A plasma processing apparatus for eliminating a discharge flicker that is observed in a light emission of plasma when microwave power applied to the plasma is changed, wherein a discharge flicker in a light emission of plasma indicates an unstable discharge region, and for avoiding a mode jump power region occurring over a range of microwave power values, the plasma processing apparatus comprising:

a processing chamber configured to plasma etch a sample;

a microwave configured to supply microwave power for generating plasma into the processing chamber;

a pulse generator attached to a magenetron configured to generate a pulse for pulse modulation of the microwave power;

a sample stage configured to hold the sample;

a light-measuring device;

a control computer configured to:

control the microwave such that the microwave supplies continuous microwave power over a range of microwave power values, wherein when the control computer causes the microwave to change the microwave power, a discharge flicker occurs in a light emission of the plasma,

identify, via the light-measuring device, a power region in which the discharge flicker occurred,

control the pulse generator, such that the microwave power is ON-OFF pulse-modulated at a set frequency, wherein, during ON periods, the control computer causes the pulse generator to set the microwave to a microwave power value higher than the identified power region in which the discharge flicker occurred,

identify a mode jump power region, wherein the control computer is configured to extract and store light emission intensity values representing a region in which the light emission intensity values of the plasma suddenly changed,

control the microwave power supply so as to provide a microwave power value higher than a microwave power value in the mode jump power region when generating plasma by continuous discharge to the processing chamber, and

control the pulse generator such that pulse modulation is automatically performed when the microwave power values correspond to the mode jump power region, so as to generate the pulse of a duty ratio to control the time average value of the microwave power by pulse modulating the microwave power of the microwave, setting the microwave power during ON to a value higher than a microwave power value in the mode jump power region, and changing a duty ratio of the pulse modulation.

2. The plasma processing apparatus according to claim 1 ,

wherein the duty ratio is set to 65% or less, and

wherein the frequency at which microwave is ON-OFF pulse-modulated is set such that an OFF time of the pulse modulation is 10 ms or less.

3. The plasma processing apparatus according to claim 1 , wherein the light-measuring device is a photodiode.

Assignments (1)
CHANGE OF NAME Recorded Mar 25, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052220/0045 →
Priority Claims (3)
JP 2011-163831 · Jul 27, 2011 · national
JP 2011-211896 · Sep 28, 2011 · national
JP 2011-232446 · Oct 24, 2011 · national
Continuity (4)
Division 15091730 · Apr 6, 2016
Continuation 14452578 · Aug 6, 2014
Continuation 13363415 · Feb 1, 2012
Related Publication 20200161092A1 · May 21, 2020