Semiconductor device
A semiconductor device with a high on-state current and high operating speed is provided. The semiconductor device includes a transistor and a first circuit. The transistor includes a first gate and a second gate, and the first gate and the second gate include a region where they overlap each other with a semiconductor layer therebetween. The first circuit includes a temperature sensor and a voltage control circuit. The temperature sensor has a function of obtaining temperature information and outputting the temperature information to the voltage control circuit. The voltage control circuit has a function of converting the temperature information into a control voltage. The first circuit applies the control voltage to the second gate.
1. A semiconductor device comprising:
a transistor and a first circuit,
wherein the transistor comprises a first gate and a second gate,
wherein the first gate and the second gate overlap each other with a semiconductor layer therebetween,
wherein the first circuit comprises a temperature sensor, a voltage control circuit, and a capacitor,
wherein the temperature sensor is configured to obtain temperature information and output the temperature information to the voltage control circuit,
wherein the voltage control circuit is configured to convert the temperature information into a control voltage,
wherein the control voltage is applied to a first electrode of the capacitor, and
wherein a second electrode of the capacitor is electrically connected to the second gate of the transistor.
2. The semiconductor device according to claim 1 ,
wherein the voltage control circuit is configured to convert the temperature information into the control voltage according to a conversion formula.
3. The semiconductor device according to claim 1 ,
wherein the voltage control circuit comprises a microcomputer or an amplifier.
4. The semiconductor device according to claim 1 ,
wherein the semiconductor layer comprises a metal oxide.
5. The semiconductor device according to claim 1 , further comprising a second circuit,
wherein the second circuit applies a negative voltage to the second gate.
6. The semiconductor device according to claim 5 ,
wherein the second circuit holds the negative voltage.
7. The semiconductor device according to claim 5 ,
wherein the second circuit comprises a transistor comprising a metal oxide in a channel formation region.
8. The semiconductor device according to claim 1 , wherein a positive voltage or a negative voltage is configured to be applied to the first gate, and
wherein a negative voltage is configured to be applied to the second gate.
9. A semiconductor device comprising:
a transistor comprising a first gate and a second gate;
a voltage generation circuit electrically connected to the second gate of the transistor;
a temperature sensor; and
a capacitor,
wherein the first gate and the second gate overlap each other with a semiconductor layer therebetween,
wherein an output terminal of the temperature sensor is electrically connected to a first electrode of the capacitor, and
wherein a second electrode of the capacitor is electrically connected to the second gate of the transistor.
10. The semiconductor device according to claim 9 ,
wherein the semiconductor layer comprises a metal oxide.