UNDERFILL MATERIAL FOR INTEGRATED CIRCUIT (IC) PACKAGE
Embodiments herein describe techniques for an IC package including an electronic component, and an underfill material around or below the electronic component to support the electronic component. The underfill material includes a resin and a thermolatent onium salt as a cationic cure for the underfill material. The thermolatent onium salt comprises an organic cation with a heteroatom center, and an anion including metalloid fluoride. The heteroatom center includes an iodonium, sulphonium, phosphonium, or N-containing onium. Other embodiments may be described and/or claimed.
1 . An integrated circuit (IC) package, comprising:
an electronic component; and
an underfill material around or below the electronic component to support the electronic component, wherein the underfill material includes a resin and a thermolatent onium salt as a cationic cure for the underfill material, wherein the thermolatent onium salt comprises an organic cation with a heteroatom center, and an anion including metalloid fluoride, and wherein the heteroatom center includes an iodonium, sulphonium, phosphonium, or N-containing onium.
2 . The IC package of claim 1 , wherein the organic cation further includes a benzyl moiety.
3 . The IC package of claim 2 , wherein the benzyl moiety includes benzylsulfonium, benzylammonium, benzylphosphonium, or benzylpyrazinium.
4 . The IC package of claim 1 , wherein the anion includes SbF 6 , AsF 6 , PF 6 , or BF 4
5 . The IC package of claim 1 , wherein the thermolatent onium salt includes N-benzylpyrazinium hexafluoroantimonate.
6 . The IC package of claim 1 , wherein the resin is epoxy resin, acrylates, bismaleimides, polyesters, polyimides, polyolefins, polystyrene, polyurethanes, polyurethane resin, silicone resin, or polyester resin.
7 . The IC package of claim 1 , wherein the underfill material does not include an amine type hardener, an anhydride type hardener, or a phenol type hardener.
8 . The IC package of claim 1 , wherein the underfill material includes the thermolatent onium salt with a concentration level greater than or equal to 0.5 wt %.
9 . The IC package of claim 1 , wherein the underfill material includes Sb, F, As, P, B, or I at a concentration level greater than or equal to 100 ppm.
10 . The IC package of claim 1 , wherein the underfill material further includes silica, alumina, boron nitride, zinc oxide, or a filler material.
11 . The IC package of claim 1 , wherein the underfill material further includes colorants, inhibitors, ion trappers, stress absorbers, polymers, surfactants, binding agents, fluxing agents, or additives.
12 . The IC package of claim 1 , wherein the underfill material is a film, liquid, or powder form before cured on the IC package.
13 . The IC package of claim 1 , wherein the underfill material is applied on the IC package by dispensing, printing, curtain coating, molding, or lamination.
14 . The IC package of claim 1 , wherein the underfill material is located at a logic to logic interconnect, a first level interconnect, a mid-level interconnect, or a PCB level interconnect.
15 . The IC package of claim 1 , wherein the underfill material has a flow distance in a range of about 20 mm to about 50 mm, a flow time in a range of about 10 min to about 30 min, and is stable at a temperature about 150 C.
16 . The IC package of claim 1 , wherein the IC package is a chip scale package (CSP), a wafer-level package (WLP), a multi-chip package (WCP), a quad-flat no-leads (QFN) package, a dual-flat no-leads (DFN) package, a flip chip package, or a ball grid array (BGA) package.
17 . A method for forming an integrated circuit (IC) package, the method comprising:
providing an assembly of the IC package, wherein the assembly includes a first component with a first surface; a second component with a second surface placed opposite to the first surface of the first component to form a space between the first component and the second component; and a connector within the space between the first component and the second component; and
providing an underfill material within the space and around the connector, wherein the underfill material includes a resin and a thermolatent onium salt as a cationic cure for the underfill material, wherein the thermolatent onium salt comprises an organic cation with a heteroatom center, and an anion including metalloid fluoride, and wherein the heteroatom center includes an iodonium, sulphonium, phosphonium, or N-containing onium.
18 . The method of claim 17 , wherein the underfill material is a film, liquid, or powder form before cured on the IC package.
19 . The method of claim 17 , wherein providing the underfill material includes dispensing the underfill material, printing the underfill material, curtain coating the underfill material, molding the underfill material, or laminating the underfill material.
20 . The method of claim 17 , wherein the first component or the second component is a printed circuit board (PCB), an interposer, a patch, a packaging substrate, a chip, a die, or a wafer; and
the connector is a solder joint, a solder bump, a micro bump, a ball, a contact, a pin, or a through via.
21 . A computing device, comprising:
a first component with a first surface;
a second component with a second surface placed opposite to the first surface of the first component to form a space between the first component and the second component;
a connector within the space between the first component and the second component; and
an underfill material within the space and around the connector, wherein the underfill material includes a resin and a thermolatent onium salt, wherein the thermolatent onium salt comprises an organic cation with a heteroatom center, and an anion including metalloid fluoride, and wherein the heteroatom center includes an iodonium, sulphonium, phosphonium, or N-containing onium.
22 . The computing device of claim 21 , wherein the first component or the second component is a printed circuit board (PCB), an interposer, a patch, a packaging substrate, a chip, a die, or a wafer.
23 . The computing device of claim 21 , wherein the connector is a solder joint, a solder bump, a micro bump, a ball, a pin, a contact, or a through via.
24 . The computing device of claim 21 , wherein the organic cation further includes a benzyl moiety, and the benzyl moiety includes benzylsulfonium, benzylammonium, benzylphosphonium, or benzylpyrazinium; and
wherein the anion includes SbF 6 , AsF 6 , PF 6 , or BF 4 .
25 . The computing device of claim 21 , wherein the computing device includes a device selected from the group consisting of a wearable device or a mobile computing device, the wearable device or the mobile computing device including one or more of an antenna, a touchscreen controller, a display, a battery, a processor, an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, a Geiger counter, an accelerometer, a gyroscope, a speaker, and a camera coupled with the memory device.