Light-emitting device and electronic apparatus
A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.
1. A light-emitting device comprising:
a substrate;
a semi-transmissive reflective layer disposed on the substrate;
a reflective layer disposed between the substrate and the semi-transmissive reflective layer;
a light-emission functional layer disposed between the reflective layer and the semi-transmissive reflective layer;
a first pixel electrode disposed between the reflective layer and the light-emission functional layer;
a second pixel electrode disposed between the reflective layer and the light-emission functional layer;
a first insulating layer that is disposed between the reflective layer and each of the first pixel electrode and the second pixel electrode and that is in contact with both the reflective layer and the first pixel electrode; and
a first sealing layer that is disposed on the semi-transmissive reflective layer and that is in contact with the semi-transmissive reflective layer, wherein:
in plan view, the first insulating layer overlaps with the first pixel electrode and the second pixel electrode and is continuous between the first pixel electrode and the second pixel electrode,
a first interval between a top surface of the reflective layer and a bottom surface of the first pixel electrode is different from a second interval between the top surface of the reflective layer and a bottom surface of the second pixel electrode; and
a thickness of the first sealing layer is greater than a difference between the first interval and the second interval.
2. The light-emitting device according to claim 1 , wherein
the thickness of the first sealing layer is greater than twice the difference between the first interval and the second interval.
3. The light-emitting device according to claim 1 ,
further comprising a second sealing layer that is disposed on the first sealing layer and that is in contact with the first sealing layer, wherein
a thickness of the second sealing layer is greater than the thickness of the first sealing layer.
4. The light-emitting device according to claim 3 , wherein
the first sealing layer is formed of silicon compound; and
the second sealing layer is formed of organic material.
5. The light-emitting device according to claim 4 ,
further comprising a third sealing layer that is disposed on the second sealing layer and that is in contact with the second sealing layer, wherein
the third sealing layer is formed of nitrogen compound.
6. The light-emitting device according to claim 5 , further comprising:
a first region which is a region having the light-emission functional layer; and
a second region which is a region not having the light-emission functional layer, wherein
the second sealing layer contacts both the first sealing layer and the third sealing layer inside the first region, and
the first sealing layer contacts the third sealing layer inside the second region.
7. The light-emitting device according to claim 1 , further comprising:
a second insulating layer disposed on the first insulating layer; and
a third insulating layer that is disposed between the second insulating layer and the second pixel electrode and that is in contact with both the second insulating layer and the second pixel electrode.
8. The light-emitting device according to claim 7 , wherein
the first insulating layer is formed of silicon nitride,
the second insulating layer is formed of silicon oxide, and
the third insulating layer is formed of silicon oxide.
9. An electronic apparatus comprising the light-emitting device according to claim 1 .