Semiconductor package structure and method of manufacturing the same
The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.
1. A semiconductor package structure, comprising:
a substrate;
a first electronic component disposed adjacent to the substrate;
a support component disposed between the first electronic component and the substrate; and
a heat source region embedded in the first electronic component and exposed from an active surface of the first electronic component,
wherein the heat source region is configured to maintain a constant temperature of a second electronic component which is disposed over the heat source region, and a backside surface of the second electronic component is thermally connected to the heat source region by a thermal bonding layer.
2. The semiconductor package structure of claim 1 , wherein the support component is configured to support the first electronic component and to separate the first electronic component from the substrate, and the heat source region overlaps the support component.
3. The semiconductor package structure of claim 2 , wherein a width of the support component is less than a width of the heat source region.
4. The semiconductor package structure of claim 2 , further comprising a second electronic component over the first electronic component, wherein a width of the support component is less than a width of the second electronic component.
5. The semiconductor package structure of claim 2 , further comprising an adhesive layer connecting the support component to a surface of the substrate, wherein a portion of the support component is disposed in the adhesive layer.
6. The semiconductor package structure of claim 1 , further comprising a conductive wire electrically connecting an active surface of the second electronic component with the active surface of the first electronic component.
7. The semiconductor package structure of claim 6 , wherein a location in which the conductive wire electrically connects the active surface of the first electronic component and the heat source region are located at different regions of the first electronic component.
8. The semiconductor package structure of claim 6 , wherein a top surface of the heat source region and the active surface of the first electronic component are substantially coplanar.
9. A semiconductor package structure, comprising:
a substrate;
a first electronic component disposed adjacent to the substrate;
a support component disposed between the first electronic component and the substrate; and
a heat source region disposed adjacent to the first electronic component;
wherein a top surface of the substrate comprises a first surface, a second surface, and a third surface having three different elevations, and an elevation of the second surface is between an elevation of the first surface and an elevation of the third surface;
wherein the elevation of the second surface of the substrate is not higher than an elevation of an active surface of the first electronic component with respect to the first surface of the substrate; and
wherein the elevation of the second surface is between the active surface of the first electronic component and a backside surface of the first electronic component opposite to the active surface.
10. The semiconductor package structure of claim 9 , wherein the first surface, the second surface, and the third surface of the substrate are free from overlapping each other in a vertical direction.
11. The semiconductor package structure of claim 9 , further comprising a lid and an interlayer between the lid and the third surface of the substrate.
12. The semiconductor package structure of claim 9 , wherein the first surface, the second surface, and the third surface of the substrate define a cavity of the substrate including a lower sub-cavity having a first width and an upper sub-cavity over the lower sub-cavity and having a second width greater than the first width.
13. The semiconductor package structure of claim 9 , further comprising a conductive wire electrically connecting the first electronic component to the substrate.
14. The semiconductor package structure of claim 13 , wherein the conductive wire is electrically connected to a pad on the second surface of the substrate.
15. The semiconductor package structure of claim 9 , wherein the substrate comprises a ceramic material.
16. The semiconductor package structure of claim 15 , wherein the substrate is monolithic.