Semiconductor devices and methods of manufacturing semiconductor devices
In one example, a semiconductor device comprises a substrate comprising a top side, a bottom side, and a conductive structure, a body over the top side of the substrate, an electronic component over the top side of the substrate and adjacent to the body, wherein the electronic component comprises an interface element on a top side of the electronic component, a lid over the interface element and a seal between the top side of the electronic component and the lid, and a buffer on the top side of the substrate between the electronic component and the body. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a substrate comprising a top side, a bottom side, and a conductive structure, wherein the conductive structure comprises a horizontal trace between the top side and the bottom side of the substrate;
a body over the top side of the substrate;
an electronic component over the top side of the substrate and adjacent to the body, wherein the electronic component comprises an interface element on a top side of the electronic component;
a lid over the interface element and a seal between the top side of the electronic component and the lid;
a buffer on the top side of the substrate between the electronic component and the body; and
a protection film over the lid, the buffer, and the body, wherein the protection film contacts the buffer;
wherein:
an internal interconnect is in the buffer;
the internal interconnect is external to the body and the seal; and
the seal does not contact the interface element.
2. The semiconductor device of claim 1 , wherein the electronic component comprises a component terminal, and wherein the internal interconnect is electrically coupled with the component terminal and the conductive structure of the substrate.
3. The semiconductor device of claim 1 , wherein the buffer contacts the seal and the body.
4. The semiconductor device of claim 1 , wherein the buffer and the seal each comprise a different material.
5. The semiconductor device of claim 1 , wherein the buffer and the seal each comprise a same, continuous material.
6. The semiconductor device of claim 1 , wherein the seal comprises a translucent material that covers the interface element.
7. The semiconductor device of claim 1 , wherein the buffer contacts the protection film.
8. The semiconductor device of claim 1 , wherein the body is between the buffer and the protection film.
9. The semiconductor device of claim 1 , wherein the buffer contacts a corner of the lid.
10. The semiconductor device of claim 1 , wherein the buffer contacts a lateral side of the lid.
11. A method, comprising:
providing a substrate comprising a top side, a bottom side, and a conductive structure;
providing an electronic component over the top side of the substrate, wherein the electronic component comprises an interface element and a component terminal on the top side of the electronic component;
providing an internal interconnect electrically coupling the interface element and the conductive structure;
providing a lid over the interface element and seal between the top side of the electronic component and the lid; and
providing a body over the top side of the substrate;
wherein a buffer is provided before the lid is provided and before the body is provided, the seal is between the interface element and the buffer, and the interface element is free of the buffer.
12. The method of claim 11 , wherein the buffer is provided over a top side of the electronic component and contacting a lateral side of the lid.
13. The method of claim 11 , further comprising providing a protection film over the lid and over the body, wherein the protection film is over the body and contacts the buffer.
14. A semiconductor device, comprising:
a substrate comprising a top side, a bottom side, and a conductive structure;
an electronic component over the top side of the substrate, wherein the electronic component comprises an interface element and a component terminal on a top side of the electronic component;
an internal interconnect electrically coupled to the component terminal and the conductive structure;
a lid over the interface element;
a seal between the top side of the electronic component and the lid; and
a body over the top side of the substrate;
wherein the body contacts a lateral side of the lid, the component terminal is in the seal, and the internal interconnect is in the body; and
wherein the seal does not contact the interface element.
15. The semiconductor device of claim 14 , wherein the seal comprises a buffer material contacting a lateral side of the lid and the component terminal is in the buffer material.
16. A semiconductor device, comprising:
a substrate comprising a top side, a bottom side, and a conductive structure;
a body over the top side of the substrate;
an electronic component over the top side of the substrate and adjacent to the body, wherein the electronic component comprises an interface element on a top side of the electronic component;
a lid over the interface element and a seal between the top side of the electronic component and the lid;
a buffer on the top side of the substrate between the electronic component and the body; and
a protection film over the lid, the buffer, and the body;
wherein the protection film is discrete from the body.
17. The semiconductor device of claim 16 , wherein the buffer contacts the protection film.
18. The semiconductor device of claim 16 , wherein the body is between the buffer and the protection film.