Semiconductor devices comprising a lid structure and methods of manufacturing semiconductor devices comprising a lid structure
View Patent ↗In one example, a semiconductor device comprises a substrate comprising a conductive structure, an electronic component over a top side of the substrate and electrically coupled with the conductive structure, a lid structure over the substrate and over the electronic component, and a vertical interconnect in the lid structure extending to a top surface of the lid structure and electrically coupled with the conductive structure. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a substrate comprising a top side and a bottom side, and a conductive structure comprising a horizontal trace between the top side and the bottom side of the substrate;
a first electronic component over a top side of the substrate and electrically coupled with the conductive structure;
a lid structure over the substrate and over the first electronic component;
a vertical interconnect in the lid structure extending to a top surface of the lid structure and electrically coupled with the conductive structure; and
a base component contacting the substrate, wherein the base component comprises a top side and a bottom side,
wherein the substrate is between the base component and the first electronic component;
wherein the base component comprises a second electronic component different than the first electronic component;
wherein the second electronic component of the base component comprises a semiconductor material; and
wherein the top side of the base component facing the first electronic component comprises a component terminal coupled with the conductive structure; and
wherein the lid structure comprises a first material, and the substrate comprises a second material different than the first material.
2. The semiconductor device of claim 1 , further comprising a seal between the top side of the substrate and a bottom side of the lid structure.
3. The semiconductor device of claim 1 , wherein the lid structure comprises a cavity and the first electronic component is in the cavity, and the second electronic component is entirely external to the cavity.
4. The semiconductor device of claim 1 , wherein:
the lid structure comprises a lid cover and a sidewall between the lid cover and the substrate;
the vertical interconnect is coupled with an external connector on a top side of lid cover; and
a majority of the top side of the lid cover is uncovered by metal.
5. The semiconductor device of claim 4 , further comprising a seal between the lid cover and the sidewall.
6. The semiconductor device of claim 4 , wherein the vertical interconnect comprises a lid vertical interconnect in the lid cover and a sidewall vertical interconnect in the sidewall, and the sidewall vertical interconnect is electrically coupled with the lid vertical interconnect and the conductive structure.
7. The semiconductor device of claim 1 , further comprising:
a lid connector electrically connected with the vertical interconnect and the conductive structure; and
a seal between the top side of the substrate and a bottom side of the lid structure, wherein the lid connector is coupled with the vertical interconnect through an opening of the seal.
8. The semiconductor device of claim 1 , further comprising an external interconnect on a top side of the lid structure and electrically coupled with the vertical interconnect.
9. The semiconductor device of claim 1 , wherein the lid structure comprises glass.
10. The semiconductor device of claim 1 , wherein the lid structure comprises a ceramic.
11. The semiconductor device of claim 1 , wherein the lid structure comprises a polymer.
12. The semiconductor device of claim 1 , wherein the lid structure is at least one of translucent or transparent.
13. The semiconductor device of claim 1 , wherein a bottom side of the vertical interconnect is flush with a bottom side of the lid structure and is above a top side of the substrate.
14. The semiconductor device of claim 1 , wherein the first electronic component comprises a sensor arranged to receive wireless radiation through the lid structure.
15. A method to manufacture a semiconductor device, comprising:
providing a base component comprising a top side and a bottom side, and a substrate comprising a top side, a bottom side, and a conductive structure comprising a horizontal trace between the top side of the substrate and the bottom side of the substrate, wherein the substrate contacts the base component;
providing a first electronic component over a top side of the substrate, wherein the first electronic component is electrically coupled with the conductive structure; and
providing a lid structure and a seal over the top side of the substrate and over the first electronic component, wherein the seal is between the lid structure and the top side of the substrate;
wherein the substrate is between the base component and the first electronic component;
wherein the base component comprises a second electronic component different than the first electronic component;
wherein the second electronic component of the base component comprises a semiconductor material;
wherein the top side of the base component facing the first electronic component comprises a component terminal coupled with the conductive structure; and
wherein the lid structure comprises a first material, and the substrate comprises a second material different than the first material.
16. The method of claim 15 , wherein the lid structure comprises a vertical interconnect, and further comprising electrically coupling the vertical interconnect with the conductive structure.
17. The method of claim 15 , further comprising attaching an external connector to a vertical interconnect in the lid structure coupled with the substrate.
18. The method of claim 15 , wherein the first electronic component comprises a sensor arranged to receive wireless radiation through the lid structure.
19. A semiconductor device, comprising:
a substrate comprising a conductive structure;
a first electronic component over a top side of the substrate and electrically coupled with the conductive structure;
a lid structure over the substrate and over the first electronic component;
a vertical interconnect in the lid structure extending to a top surface of the lid structure and electrically coupled with the conductive structure; and
a base component contacting the substrate,
wherein the substrate is between the base component and the first electronic component;
wherein the base component comprises a second electronic component different than the first electronic component;
wherein the second electronic component of the base component comprises a semiconductor material;
wherein the first electronic component comprises a sensor arranged to receive wireless radiation through the lid structure; and
wherein the lid structure comprises a first material, and the substrate comprises a second material different than the first material.
20. The semiconductor device of claim 19 , wherein a bottom side of the vertical interconnect is flush with a bottom side of the lid structure and is above a top side of the substrate.