Semiconductor devices having an electromagnetically transmissive lid structure and methods of manufacturing semiconductor devices having an electromagnetically transmissive lid structure
View Patent ↗In one example, a semiconductor device comprises a substrate comprising a conductive structure, an electronic component over a top side of the substrate and electrically coupled with the conductive structure, a lid structure over the substrate and over the electronic component, and a vertical interconnect in the lid structure extending to a top surface of the lid structure and electrically coupled with the conductive structure. Other examples and related methods are also disclosed herein.
1 . A semiconductor device, comprising:
a base component;
a substrate over a top side of the base component and comprising a conductive structure;
an electronic component over a top side of the substrate and electrically coupled with the conductive structure;
a lid structure over the substrate and the electronic component; and
a vertical interconnect in the base component electrically coupled with the conductive structure;
wherein the lid structure comprises a material that is transmissive to electromagnetic energy;
wherein the lid structure comprises a first material, and the substrate comprises a second material different than the first material;
wherein the lid structure comprises a lid cover and a lid sidewall between the lid cover and the substrate, wherein the lid sidewall is discrete from the lid cover, and a lateral side of the lid sidewall is substantially perpendicular to the lid cover; and
wherein the vertical interconnect is discrete from the conductive structure and extends completely through the base component, and a bottom side of the vertical interconnect is flush with a bottom side of the base component.
2 . The semiconductor device of claim 1 , wherein the base component comprises a semiconductor material.
3 . The semiconductor device of claim 1 , further comprising a seal between the lid structure and the substrate, wherein the seal comprises at least one of a glass frit, metal, or solder.
4 . The semiconductor device of claim 1 , wherein the lid structure comprises a cavity, and the electronic component is in the cavity.
5 . The semiconductor device of claim 1 , further comprising a seal between the lid cover and the lid sidewall, wherein the seal is between a top side of the lid sidewall and a bottom side of the lid cover.
6 . The semiconductor device of claim 1 , further comprising an external interconnect electrically coupled with the vertical interconnect.
7 . A semiconductor device, comprising:
a base component comprising a semiconductor material;
a substrate over a top side of the base component and comprising a conductive structure;
an electronic component over a top side of the substrate and electrically coupled with the conductive structure;
a lid structure over the substrate and the electronic component; and
a vertical interconnect in the base component electrically coupled with the conductive structure;
wherein the lid structure comprises glass;
wherein the lid structure comprises a first material, and the substrate comprises a second material different than the first material;
wherein the lid structure comprises a lid cover and a lid sidewall between the lid cover and the substrate, wherein the lid sidewall is discrete from the lid cover, and a lateral side of the lid sidewall is substantially perpendicular to the lid cover; and
wherein the vertical interconnect is discrete from the conductive structure and extends completely through the base component, and a bottom side of the vertical interconnect is flush with a bottom side of the base component.
8 . The semiconductor device of claim 7 , wherein the lid structure comprises a cavity, and the electronic component is in the cavity.
9 . The semiconductor device of claim 7 , wherein the electronic component comprises an optical device.
10 . The semiconductor device of claim 7 , wherein the electronic component comprises a Light-Detection-And-Ranging (LiDAR) device.
11 . The semiconductor device of claim 7 , further comprising a seal between the lid structure and the substrate, wherein the seal comprises at least one of a glass frit, metal, or solder.
12 . The semiconductor device of claim 7 , further comprising a seal between the lid cover and the lid sidewall, wherein the seal is between a top side of the lid sidewall and a bottom side of the lid cover.
13 . A method to manufacture a semiconductor device, comprising:
providing a substrate on a base component comprising a vertical interconnect, wherein the substrate comprises a conductive structure and the base component comprises a vertical interconnect electrically coupled with the vertical interconnect with the conductive structure;
providing an electronic device over a top side of the substrate and electrically coupling the electronic device with the conductive structure;
providing a seal on the top side of the substrate; and
providing a lid structure over the top side of the substrate and over the electronic device;
wherein the lid structure comprises a material that is transmissive to electromagnetic energy;
wherein the lid structure comprises a first material, and the substrate comprises a second material different than the first material;
wherein the lid structure comprises a lid cover and a lid sidewall between the lid cover and the substrate, wherein the lid sidewall is discrete from the lid cover, and a lateral side of the lid sidewall is substantially perpendicular to the lid cover; and
wherein the vertical interconnect is discrete from the conductive structure and extends completely through the base component, and a bottom side of the vertical interconnect is flush with a bottom side of the base component.
14 . The method of claim 13 , wherein the base component comprises a semiconductor material.
15 . The method of claim 13 , wherein the seal is attached to the lid structure, and the seal is provided on the top side of the substrate, when the lid structure is provided over the top side of the substrate.