Image sensor with shallow trench edge doping
View Patent ↗The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has a photodetector region arranged within a semiconductor substrate. One or more dielectric materials are disposed within a trench defined by one or more interior surfaces of the semiconductor substrate. A doped epitaxial material is arranged within the trench and is laterally between the one or more dielectric materials and the photodetector region. A dielectric protection layer is arranged over the one or more dielectric materials within the trench. The dielectric protection layer laterally contacts a sidewall of the doped epitaxial material.
1. An integrated chip, comprising:
a photodetector region arranged; to at least partly include an upper surface of a semiconductor substrate;
one or more dielectric materials disposed within a trench defined by one or more interior surfaces of the; semiconductor substrate, the trench extends from the upper surface of the semiconductor substrate to within the semiconductor substrate;
a doped epitaxial material arranged within the trench and between the one or more dielectric materials and the photodetector region; and
a dielectric protection layer arranged directly over an upper surface of the one or more dielectric materials within the trench, wherein the dielectric protection layer contacts a sidewall of the doped epitaxial material.
2. The integrated chip of claim 1 , further comprising:
a well region disposed within the semiconductor substrate between the doped epitaxial material and the photodetector region.
3. The integrated chip of claim 2 , wherein the sidewall of the doped epitaxial material contacts both a sidewall of the dielectric protection layer and a sidewall of the one or more dielectric materials.
4. The integrated chip of claim 1 , wherein the doped epitaxial material that is within the trench has a first width that is less than a second width of the trench.
5. The integrated chip of claim 1 , wherein a side of the doped epitaxial material that faces the one or more dielectric materials also extends to vertically above a top of the one or more dielectric materials.
6. The integrated chip of claim 1 , wherein the doped epitaxial material has an outermost sidewall that is separated by non-zero distances from opposing sidewalls of the semiconductor substrate that define the trench.
7. An integrated chip, comprising:
an image sensing element arranged within a substrate, the substrate having a first sidewall and a second sidewall that define a trench within the substrate in a cross-sectional view;
one or more dielectric materials arranged within the trench and contacting the first sidewall; and
a doped epitaxial material arranged within the trench and contacting the second sidewall.
8. The integrated chip of claim 7 , further comprising:
a gate structure disposed over the substrate; and
sidewall spacers arranged along opposing sides of the gate structure, wherein the doped epitaxial material laterally contacts the sidewall spacers.
9. The integrated chip of claim 7 , further comprising:
a well region disposed within the substrate and laterally contacting the doped epitaxial material.
10. The integrated chip of claim 7 , wherein the doped epitaxial material is also arranged directly over the image sensing element.
11. The integrated chip of claim 7 , wherein the second sidewall is closer to the image sensing element than the first sidewall.
12. The integrated chip of claim 7 , wherein the doped epitaxial material is over a horizontally extending surface of the one or more dielectric materials.
13. An integrated chip, comprising:
a photodetector region arranged; to at least partly include an upper surface of a substrate;
one or more dielectric materials disposed within a trench defined by one or more interior surfaces of the substrate, the trench having a height that extends from the upper surface of the substrate to within the substrate; and
a doped epitaxial material disposed within the trench and having an outermost sidewall facing away from the doped epitaxial material, the outermost sidewall contacting a sidewall of the one or more dielectric materials along an interface extending along the height of the trench.
14. The integrated chip of claim 13 , wherein the one or more dielectric materials contact the substrate.
15. The integrated chip of claim 13 , wherein the doped epitaxial material continuously extends from within the trench to outside of the trench.
16. The integrated chip of claim 13 , wherein the doped epitaxial material directly contacts an upper surface of the photodetector region.
17. The integrated chip of claim 13 , further comprising:
a dielectric protection layer arranged over the one or more dielectric materials within the trench, wherein the doped epitaxial material extends from vertically below the dielectric protection layer to vertically above the dielectric protection layer.
18. The integrated chip of claim 13 , wherein the one or more dielectric materials contact a horizontally extending surface of the substrate defining the trench.
19. The integrated chip of claim 13 , wherein a horizontally extending surface of the substrate defining the trench extends in opposing directions for non-zero distances past the outermost sidewall of the doped epitaxial material.
20. The integrated chip of claim 13 , wherein the doped epitaxial material within the trench has a first width and the trench has a second width that is greater than the first width.