IP Library Granted Patent US 11,203,528
Granted Patent B2
US 11,203,528 · App. 16/815,646 · Granted Dec 21, 2021

N—H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications

Inventors: Antonio Sanchez (Tsukuba, JP); Gennadiy Itov (Flemington, NJ); Manish Khandelwal (Somerset, NJ); Cole Ritter (Easton, PA); Peng Zhang (Montvale, NJ); Jean-Marc Girard (Versailles, FR); Zhiwen Wan (Plano, TX); Glenn Kuchenbeiser (Newark, DE); David Orban (Hampton, NJ); Sean Kerrigan (Princeton, NJ); Reno Pesaresi (Easton, PA); Matthew Damien Stephens (Easton, PA); Yang Wang (Glen Mills, PA); Guillaume Husson (Wilmington, DE)
Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude; American Air Liquide, Inc.
C01B21/087B05D1/005B05D1/02B05D1/18C01B21/0823C04B35/14C04B35/5603C04B35/571C04B35/589C04B35/597C08G77/62C09D1/00C09D183/16C23C16/24C23C16/45553C23C18/122C23C18/1275C23C18/1291C23C18/1295C04B2235/483H01L21/0214H01L21/02222
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Quick Facts
Patent No.
US 11,203,528
App. No.
16/815,646
Granted
Dec 21, 2021
Kind
B2
Abstract

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH 3 ) x (SiH 2 —) y ], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Claims (17)

1. A method of forming a Si-containing film on a substrate, the method comprising forming a solution comprising a N—H free, C-free, and Si-rich perhydropolysilazane molecule and contacting the solution with the substrate via a spin coating, spray coating, dip coating, or slit coating technique to form the Si-containing film, the N—H free, C-free, and Si-rich perhydropolysilazane molecule comprising N—H free repeating units having the formula [—N(SiH 3 ) x (SiH 2 —) y ], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; or x=0, 1 or 2 and y=1, 2, or 3 with x+y=3, and wherein the N—H free, C-free, and Si-rich perhydropolysilazane molecule comprises no Hydrogen bound to Nitrogen, and wherein all N's are bound to three Si atoms, and wherein the N—H free, C-free, and Si-rich perhydropolysilazane molecule has a weight average molecular weight (M w ) ranging from approximately 332 dalton to approximately 100,000 dalton.

2. The method of claim 1 , further comprising curing the Si-containing film.

3. The method of claim 1 , the Si-containing film being SiON.

4. The method of claim 1 , wherein the solution is a liquid at standard temperature and pressure.

5. The method of claim 1 , wherein the solution comprises a solvent or a solvent system.

6. The method of claim 5 , wherein the solvent or the solvent system comprises hydrocarbons, ketones, ethers, amines, esters, or combinations thereof.

7. The method of claim 5 , wherein the solvent or the solvent system comprises benzene, toluene, xylene, n-hexane, mesitylene, methylethylketone, cyclohexanone, 2-heptanone, ethyl ether, tetrahydrofuran, pyridine, xylene, methyl pyridine, 2-hydroxy ethyl propionate, hydroxyl ethyl acetate, or combinations thereof.

8. The method of claim 5 , wherein the N—H free, C-free, and Si-rich perhydropolysilazane molecule is dissolved in the solvent or the solvent system.

9. The method of claim 1 , wherein the solution does not include a catalyst capable of catalyzing a synthesis of the N—H free and Si-rich perhydropolysilazane.

10. A method of forming a Si-containing film on a substrate, the method comprising forming a solution comprising a N—H free, C-free, and Si-rich perhydropolysilazane molecule and contacting the solution with the substrate via a spin coating, spray coating, dip coating, or slit coating technique to form the Si-containing film, the N—H free, C-free, and Si-rich perhydropolysilazane molecule comprising N—H free repeating units having the formula [—N(SiH 3 ) x (SiH 2 —) y ], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; or x=0, 1 or 2 and y=1, 2, or 3 with x+y=3, and wherein the N—H free, C-free, and Si-rich perhydropolysilazane molecule comprises no Hydrogen bound to Nitrogen, and wherein all N's are bound to three Si atoms, and wherein the N—H free, C-free, and Si-rich perhydropolysilazane molecule has a weight average molecular weight (Mw) ranging from approximately 500 to approximately 1,000,000 daltons.

11. The method of claim 10 , wherein the M w is from approximately 1,000 to approximately 100,000 daltons.

12. The method of claim 10 , wherein the M w is from approximately 3,000 to approximately 50,000 daltons.

13. The method of claim 10 , wherein the solution is a liquid at standard temperature and pressure.

14. The method of claim 10 , wherein the solution comprises a solvent or a solvent system.

15. The method of claim 14 , wherein the solvent or the solvent system comprises hydrocarbons, ketones, ethers, amines, esters, or combinations thereof.

16. The method of claim 14 , wherein the solvent or the solvent system comprises benzene, toluene, xylene, n-hexane, mesitylene, methylethylketone, cyclohexanone, 2-heptanone, ethyl ether, tetrahydrofuran, pyridine, xylene, methyl pyridine, 2-hydroxy ethyl propionate, hydroxyl ethyl acetate, or combinations thereof.

17. The method of claim 14 , wherein the N—H free, C-free, and Si-rich perhydropolysilazane molecule is dissolved in the solvent or the solvent system.

Continuity (3)
Division 15661412 · Jul 27, 2017
Provisional Application 62432592 · Dec 11, 2016
Related Publication 20200277190A1 · Sep 3, 2020