Build-up package for integrated circuit devices, and methods of making same
A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.
1. A device, comprising:
an integrated circuit die having an active surface, a backside opposite the active surface, and a sidewall extending between the active surface and the backside;
a molded body extending around a perimeter of the die; and
a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body, and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate between a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body,
wherein a first portion of the sidewall adjacent the active surface is in direct contact with the CTE buffer material, and
wherein a second portion of the sidewall adjacent the backside is in direct contact with the molded body.
2. The device of claim 1 , wherein the CTE buffer material extends around the entire perimeter of the die.
3. The device of claim 1 , wherein the CTE buffer material has a coefficient of thermal expansion of approximately 4.14 ppm/° C.
4. The device of claim 1 , wherein the CTE buffer material has a thickness in the direction of the active surface of the die of approximately 150-250 μm.
5. The device of claim 1 , wherein the CTE buffer material has a triangular shaped cross-sectional configuration.
6. The device of claim 1 wherein the CTE buffer material has an upper surface, and wherein the upper surface of the CTE buffer material is directly adjacent the active surface of the die.
7. The device of claim 6 wherein the CTE buffer material contacts the active surface of the die.
8. The device of claim 1 wherein:
the CTE buffer material includes an upper surface, and
the CTE buffer material is in direct contact with the first portion of the sidewall, and the upper surface of the CTE buffer material is directly adjacent to the active surface of the die.
9. The device of claim 1 wherein the first portion of the sidewall and the second portion of the sidewall are vertically aligned.
10. A device, comprising:
an integrated circuit die having an active surface, a backside, and a sidewall extending between the active surface and the backside;
a molded body extending around a perimeter of the die; and
a ring of CTE buffer material positioned between the die and the molded body at the active surface of the die,
wherein a first portion of the sidewall adjacent the active surface is in physical contact with the CTE buffer material, and
wherein a second portion of the sidewall adjacent the backside is in physical contact with the molded body.
11. The device of claim 10 , wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.
12. The device of claim 10 , wherein the CTE buffer material has a triangular shaped cross-sectional configuration.
13. The device of claim 10 , wherein an upper surface of the molded body and an upper surface of the CTE buffer material are substantially coplanar.
14. The device of claim 10 wherein the CTE buffer material includes an upper surface, and wherein the upper surface of the CTE buffer is directly adjacent to the active surface of the die.
15. The device of claim 14 wherein the CTE buffer material contacts the active surface of the die.
16. The device of claim 10 wherein:
the CTE buffer material includes an upper surface, and
the CTE buffer material is in direct contact with the first portion of the sidewall, and the upper surface of the CTE buffer material is directly adjacent to the active surface of the die.
17. The device of claim 10 wherein the first portion of the sidewall and the second portion of the sidewall are vertically aligned.