IP Library Granted Patent US 11,121,074
Granted Patent B2
US 11,121,074 · App. 16/819,963 · Granted Sep 14, 2021

Packaged die stacks with stacked capacitors and methods of assembling same

Inventors: Bok Eng Cheah (Bukit Gambir, MY); Mooi Ling Chang (Bayan Baru, MY); Ping Ping Ooi (Butterworth, MY); Jackson Chung Peng Kong (Tanjung Tokong, MY); Wen Wei Lum (Sungai Petani, MY)
Assignee: Intel Corporation
H01L23/5223H01G4/30H01G4/38H01G4/40H01L24/17H01L25/0657H01L25/16H01L28/60H01L23/50H01L23/5389H01L24/16H01L2224/16145H01L2224/16146H01L2224/16225H01L2224/16265H01L2224/171H01L2224/17181H01L2224/18H01L2224/32265H01L2224/73203H01L2224/73259H01L2924/15311H01L2924/19105
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Quick Facts
Patent No.
US 11,121,074
App. No.
16/819,963
Granted
Sep 14, 2021
Kind
B2
Abstract

A stacked-die and stacked-capacitor package vertically arranged capacitors to mirror a semiconductive-device stack. The stacked capacitor can be electrically coupled to one or more semiconductive devices in the stacked architecture.

Claims (11)

1. A semiconductive apparatus, comprising:

a plurality of stacked dies on a package substrate;

a plurality of stacked capacitors associated with at least some of the dies in the plurality of stacked dies;

one or more through mold vias (TMVs) that communicate power between the plurality of stacked capacitors;

wherein the plurality of stacked capacitors are located on a periphery of the plurality of stacked dies.

2. The semiconductive apparatus of claim 1 , wherein there is at least one capacitor corresponding to each die in the plurality of stacked dies.

3. The semiconductive apparatus of claim 1 , wherein there are eight capacitors corresponding to each die in the plurality of stacked dies.

4. The semiconductive apparatus of claim 1 , wherein there are four capacitors on opposing sides of a die in the plurality of stacked dies.

5. The semiconductive apparatus of claim 1 , wherein stacked capacitors on two adjacent levels in the plurality of stacked capacitors share a common merged power rail.

6. The semiconductive apparatus of claim 1 , wherein the plurality of stacked dies and the plurality of stacked capacitors are encapsulated in one or more layers of a molding material.

7. The semiconductive apparatus of claim 1 , further including one or more through silicon vias (TSVs) that communicate power between levels to both the plurality of stacked dies and the plurality of stacked capacitors.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2025
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP. (DBA SOLIDIGM)
Reel/Frame 072792/0414 →
Priority Claims (1)
MY PI 2017702405 · Jun 29, 2017 · national
Continuity (2)
Continuation 16017652 · Jun 25, 2018
Related Publication 20210005547A1 · Jan 7, 2021
Cited By (2)
US 12,580,126 US 12,614,677