Red light emitting diode and manufacturing method thereof

1. A red light emitting diode, comprising:

an epitaxial stacked layer, comprising a first-type semiconductor layer, a second-type semiconductor layer, and a light emitting layer located between the first-type semiconductor layer and the second-type semiconductor layer, a main light emitting wavelength of the light emitting layer falling in a red light range, the epitaxial stacked layer comprising a first side and a second side opposite to each other, wherein the first side is adjacent to the first-type semiconductor layer, and the second side is adjacent to the second-type semiconductor layer;

a first electrode, electrically connected to the first-type semiconductor layer and located at the first side of the epitaxial stacked layer;

a second electrode, electrically connected to the second-type semiconductor layer and located at the second side of the epitaxial stacked layer;

a first electrode pad, disposed on the first electrode and electrically connected to the first electrode;

a second electrode pad, disposed on the second electrode and electrically connected to the second electrode, wherein the first electrode pad and the second electrode pad are located at the first side of the epitaxial stacked layer; and

a reflective stacked layer, comprising a first insulating layer, a second insulating layer, and a reflective layer, the reflective layer disposed between the first insulating layer and the second insulating layer,

wherein,

the first insulating layer covers the epitaxial stacked layer and is located between the reflective layer and the epitaxial stacked layer, the first insulating layer has a plurality of first vias, and the first vias expose the first electrode and the second electrode;

the second insulating layer covers the reflective layer and has a plurality of second vias; and

the reflective layer has a plurality of third vias,

wherein the first electrode pad and the second electrode pad are electrically connected to the first electrode and the second electrode respectively through the first vias, the second vias, and the third vias.

2. The red light emitting diode according to claim 1 , further comprising:

a buffer stacked layer, the reflective stacked layer located between the epitaxial stacked layer and the buffer stacked layer, the buffer stacked layer comprising a third insulating layer, a fourth insulating layer, and a buffer layer, the buffer layer sandwiched between the third insulating layer and the fourth insulating layer,

wherein the third insulating layer covers the buffer layer, wherein the third insulating layer has a plurality of fourth vias, the buffer layer has a plurality of fifth vias, and the fourth insulating layer has a plurality of sixth vias;

a first current conducting layer, disposed between the reflective stacked layer and the buffer stacked layer; and

a second current conducting layer, disposed between the reflective stacked layer and the buffer stacked layer,

wherein,

the first current conducting layer and the second current conducting layer are electrically connected to the first electrode and the second electrode respectively through the first vias, the second vias, and the third vias, and the first electrode pad and the second electrode pad are electrically connected to the first current conducting layer and the second current conducting layer respectively through the fourth vias, the fifth vias, and the sixth vias.

3. The red light emitting diode according to claim 1 , wherein

at least one of the first electrode and the second electrode has a soldering portion and at least one finger portion extending from the soldering portion,

wherein the reflective layer and the soldering portion of the first electrode or the second electrode are disposed in a misaligned manner, and the finger portion of the first electrode or the second electrode and the reflective layer are disposed in an overlapping manner.

4. The red light emitting diode according to claim 1 , further comprising:

a carrying substrate, having an upper surface;

a bonding layer, disposed on the upper surface; and

a lower insulating layer, disposed on the upper surface, the bonding layer located between the carrying substrate and the lower insulating layer,

wherein,

the epitaxial stacked layer, the first electrode, the second electrode, the first electrode pad, and the second electrode pad are located on the lower insulating layer.

5. The red light emitting diode according to claim 4 , wherein side surfaces of the carrying substrate, the bonding layer, and the lower insulating layer form an inclined surface.

6. The red light emitting diode according to claim 4 , further comprising:

a third insulating layer;

a first current conducting layer, disposed between the reflective stacked layer and the third insulating layer; and

a second current conducting layer, disposed between the reflective stacked layer and the third insulating layer,

wherein the first electrode pad and the second electrode pad are electrically connected to the first electrode and the second electrode through the first current conducting layer and the second current conducting layer respectively.

7. The red light emitting diode according to claim 4 , further comprising:

a buffer layer;

a first current conducting layer, disposed between the reflective stacked layer and the buffer layer; and

a second current conducting layer, disposed between the reflective stacked layer and the buffer layer,

wherein the first electrode pad and the second electrode pad are electrically connected to the first electrode and the second electrode through the first current conducting layer and the second current conducting layer respectively.

8. The red light emitting diode according to claim 1 , further comprising:

a semiconductor layer, located between the first electrode and the first-type semiconductor layer, wherein the first electrode is electrically connected to the first-type semiconductor layer through the semiconductor layer.

9. The red light emitting diode according to claim 1 , further comprising a conductive structure layer, disposed at the second side and located between the second-type semiconductor layer and the second electrode.

10. The red light emitting diode according to claim 9 , wherein the conductive structure layer comprises:

a transparent conductive layer; and

a plurality of ohmic metal structures, the ohmic metal structures located between transparent conductive layer and the second-type semiconductor layer, the transparent conductive layer covering the ohmic metal structures.

11. The red light emitting diode according to claim 9 , wherein the conductive structure layer comprises a transparent conductive layer.

12. A manufacturing method of a red light emitting diode, comprising:

forming an epitaxial stacked layer, wherein the epitaxial stacked layer comprises a first-type semiconductor layer, a second-type semiconductor layer, and a light emitting layer located between the first-type semiconductor layer and the second-type semiconductor layer, and a main light emitting wavelength of the light emitting layer falls in a red light range, wherein the epitaxial stacked layer has a first side and a second side opposite to each other, the first side is adjacent to the first-type semiconductor layer, and the second side is adjacent to the second-type semiconductor layer;

respectively forming a first electrode and a second electrode on the first side and the second side of the epitaxial stacked layer, the first electrode and the second electrode electrically connected to the first-type semiconductor layer and the second-type semiconductor layer of the epitaxial stacked layer respectively;

forming a first electrode pad and a second electrode pad on the first side of the epitaxial stacked layer, the first electrode pad and the second electrode pad electrically connected to the first electrode and the second electrode respectively; and

forming a reflective stacked layer on the epitaxial stacked layer, wherein the reflective stacked layer comprises a first insulating layer, a reflective layer, and a second insulating layer, wherein the reflective layer is located between the first insulating layer and the second insulating layer,

wherein the step of forming the reflective stacked layer further comprising:

forming the first insulating layer on the epitaxial stacked layer, the first electrode, and the second electrode and etching parts of the first insulating layer to form a plurality of first vias, the first vias exposing parts of the first electrode and the second electrode;

forming the reflective layer on the first insulating layer and etching parts of the reflective layer to form a plurality of third vias, the third vias respectively aligning with the first vias; and

forming the second insulating layer on the reflective layer and etching parts of the second insulating layer to form a plurality of second vias, the second vias respectively aligning with the third vias.

13. The manufacturing method of the red light emitting diode according to claim 12 , the step of forming the first electrode pad and the second electrode pad on the first side of the epitaxial stacked layer further comprising: filling the first vias, the second vias, and the third vias with the first electrode pad and the second electrode pad, so that the first electrode pad and the second electrode pad are electrically connected to the first electrode and the second electrode respectively.

14. The manufacturing method of the red light emitting diode according to claim 12 , further comprising forming a first current conducting layer and a second current conducting layer on the third insulating layer and filling the first vias, the second vias, and the third vias with the first current conducting layer and the second current conducting layer, so that the first current conducting layer and the second current conducting layer are electrically connected to the first electrode and the second electrode respectively.

15. The manufacturing method of the red light emitting diode according to claim 14 , further comprising: forming a buffer stacked layer on the epitaxial stacked layer, wherein the buffer stacked layer comprises a third insulating layer, a buffer layer, and a fourth insulating layer, wherein the buffer layer is located between the third insulating layer and the fourth insulating layer.

16. The manufacturing method of the red light emitting diode according to claim 15 , the step of forming the buffer stacked layer further comprising:

forming the third insulating layer on the epitaxial stacked layer, the first electrode, and the second electrode and etching parts of the third insulating layer to form a plurality of fourth vias, the fourth vias exposing pails of the first current conducting layer and the second current conducting layer;

forming the buffer layer on the third insulating layer and etching parts of the buffer layer to form a plurality of fifth vias, the fifth vias respectively aligning with the fourth vias; and

forming the fourth insulating layer on the buffer layer and etching parts of the fourth insulating layer to form a plurality of sixth vias, the sixth vias respectively aligning with the fifth vias.

17. The manufacturing method of the red light emitting diode according to claim 16 , the step of forming the first electrode pad and the second electrode pad on the first side of the epitaxial stacked layer further comprising: filling the fourth vias, the fifth vias, and the sixth vias with the first electrode pad and the second electrode pad, so that the first electrode pad and the second electrode pad are electrically connected to the first current conducting layer and the second current conducting layer respectively.