Reducing or eliminating nanopipe defects in III-nitride structures
Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.
1. A device comprising:
a III-nitride structure disposed between an n-type region and a p-type region;
a III-nitride layer comprising GaN islands coalesced into a smooth film, and a nanopipe defect disposed at a boundary between two GaN islands; and
a nanopipe terminating layer that is doped with a donor disposed between the III-nitride structure and the III-nitride layer comprising the nanopipe defect, wherein the nanopipe terminates in the nanopipe terminating layer.
2. The device of claim 1 wherein the donor comprises Si.
3. The device of claim 1 wherein the III-nitride structure comprises a light emitting layer.
4. The device of claim 1 wherein the nanopipe terminating layer comprises aluminum.
5. The device of claim 1 wherein the nanopipe terminating layer comprises indium.
6. A device comprising:
a III-nitride device structure;
a III-nitride layer comprising GaN islands coalesced into a smooth film, and a nanopipe defect disposed at a boundary between two GaN islands; and
a nanopipe termination layer disposed between the III-nitride device structure and the III-nitride layer comprising the nanopipe defect, wherein the nanopipe defect terminates in the nanopipe terminating layer.
7. The device of claim 6 wherein III-nitride structure comprises a light emitting layer.
8. The device of claim 6 wherein the nanopipe terminating layer comprises aluminum.
9. The device of claim 6 wherein the nanopipe terminating layer comprises indium.
10. The device of claim 6 wherein the nanopipe terminating layer is not intentionally doped.
11. The device of claim 6 wherein the nanopipe terminating layer is doped with an acceptor.
12. The device of claim 6 wherein the nanopipe terminating layer is doped with a donor.