Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices
Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.
1. A method for growing a light emitting device, the method comprising:
growing a p-type region over a growth substrate by at least one of RP-CVD and sputtering deposition in at least a reduced hydrogen environment that does not cause inoperability of at least the p-type region; and
growing an n-type region over the p-type region using a non-RP-CVD and non-sputtering deposition process, the p-type region and the n-type region comprising III-nitride materials.
2. The method of claim 1 , wherein the growth substrate comprises a non-III nitride material and a GaN film disposed on a non-III nitride material, and the method further comprises growing the GaN film by metal organic chemical vapor deposition (MOCVD).
3. The method of claim 1 , wherein the growth substrate comprises a non-III-nitride material, and the method further comprises: growing the GaN film by at least one of RP-CVD and sputtering deposition.
4. The method of claim 1 , wherein growing the n-type region over the p-type region comprises growing a portion of the n-type region be at least one of RP-CVD and sputtering deposition.
5. The method of claim 1 , wherein growing the n-type region over the p-type region comprises growing the n-type region by MOCVD.
6. A method for growing a light emitting device, the method comprising:
growing a hydrogen-free p-type region over a growth substrate by at least one of RP-CVD and sputtering deposition;
growing an n-type region over the p-type region, using a non-RP-CVD and non-sputtering deposition process, the p-type region and the n-type region comprising III-nitride materials.
7. The method of claim 6 , wherein the growth substrate comprises a non-III nitride material and a GaN film disposed on a non-III nitride material, and the method further comprises growing the GaN film by metal organic chemical vapor deposition (MOCVD).
8. The method of claim 6 , wherein the growth substrate comprises a non-III-nitride material, and the method further comprises: growing the GaN film by at least one of RP-CVD and sputtering deposition.
9. The method of claim 6 , wherein growing the n-type region over the p-type region comprises growing a portion of the n-type region be at least one of RP-CVD and sputtering deposition.
10. The method of claim 6 , wherein growing the n-type region over the p-type region comprises growing the n-type region by MOCVD.
11. A method for growing a light emitting device, the method comprising:
growing a p-type region over a growth substrate by at least one of RP-CVD and sputtering deposition in a gaseous environment comprising one or more of a nitrogen-containing gas and a hydrogen-containing gas that does not cause inoperability of at least the p-type region; and
growing an n-type region over the p-type region using a non-RP-CVD and non-sputtering deposition process, the p-type region and the n-type region comprising III-nitride materials.
12. The method of claim 11 , wherein the growth substrate comprises a non-III nitride material and a GaN film disposed on a non-III nitride material, and the method further comprises growing the GaN film by metal organic chemical vapor deposition (MOCVD).
13. The method of claim 11 , wherein the growth substrate comprises a non-III-nitride material, and the method further comprises: growing the GaN film by at least one of RP-CVD and sputtering deposition.
14. The method of claim 11 , wherein growing the n-type region over the p-type region comprises growing a portion of the n-type region be at least one of RP-CVD and sputtering deposition.
15. The method of claim 11 , wherein growing the n-type region over the p-type region comprises growing the n-type region by MOCVD.