High-speed light sensing apparatus
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
1. An image system, comprising:
a semiconductor substrate having a first material composition;
a light absorption portion supported by the semiconductor substrate and having a second material composition different from the first material composition;
a first switch, electrically coupled to the light absorption portion, having a first region for receiving a first control signal and a first output region for outputting a first portion of charges from the light absorption portion;
a second switch, electrically coupled to the light absorption portion, having a second region for receiving a second control signal and a second output region for outputting a second portion of charges from the light absorption portion; and
a processing unit in electrical communication with the first and second switches, the processing unit being configured to derive a depth information based on the first portion of charges and the second portion of charges.
2. The image system of claim 1 , wherein the first material composition comprises germanium.
3. The image system of claim 1 , wherein the second material composition comprises silicon.
4. The image system of claim 1 , wherein the light absorption portion is embedded in the semiconductor substrate.
5. The image system of claim 1 , wherein the first region for receiving the first control signal and the first output region for outputting the first portion of charges are doped regions.
6. The image system of claim 5 , wherein a doping concentration of the first region for receiving the first control signal and a doping concentration of the first output region for outputting the first portion of charges are lower than 5×10 20 cm −3 .
7. The image system of claim 6 , wherein a doping type of the first region for receiving the first control signal and a doping type of the first output region for outputting the first portion of charges are different.
8. The image system of claim 1 , wherein the first region for receiving the first control signal is entirely or partially formed within a well region with a doping type different from the first region for receiving the first control signal.
9. The image system of claim 1 , wherein the first output region for outputting the first portion of charges is surrounded by a well region with a doping type different from the first output region for outputting the first portion of charges.
10. The image system of claim 1 , further comprising a first doping region arranged between the light absorption portion and the semiconductor substrate.
11. The image system of claim 10 , wherein the first doping region is electrically coupled to one or more additional doping regions, the one or more additional doping regions having a doping type different from the first doping region.
12. The image system of claim 1 , further comprising a metal layer arranged over the light absorption portion.
13. The image system of claim 1 , wherein the light absorption portion is configured to absorb incident light within a first wavelength band.
14. The image system of claim 1 , wherein the first region for receiving the first control signal is arranged in the light absorption portion and the first output region for outputting the first portion of charges is formed in the light absorption portion.
15. The image system of claim 1 , wherein the first region for receiving the first control signal is formed in the light absorption portion and the first output region for outputting the first portion of charges is formed in the semiconductor substrate.
16. The image system of claim 1 , wherein the first region for receiving the first control signal is formed in the semiconductor substrate and the first output region for outputting the first portion of charges is formed in the semiconductor substrate.
17. An image system, comprising:
a semiconductor substrate having a first material composition;
a light absorption portion supported by the semiconductor substrate and having a second material composition different from the first material composition;
a first switch, electrically coupled to the light absorption portion, having a first region for receiving a first control signal and a first output region for outputting a first portion of charges; and
a processing unit in electrical communication with the first switch, the processing unit being configured to derive a depth information based on the first portion of charges.
18. The image system of claim 17 , wherein the first region for receiving the first control signal is formed in the light absorption portion and the first output region for outputting the first portion of charges is formed in the light absorption material.
19. The image system of claim 17 , wherein the first region for receiving the first control signal is formed in the light absorption portion and the first output region for outputting the first portion of charges is formed in the semiconductor substrate.
20. The image system of claim 17 , wherein the first region for receiving the first control signal is formed in the semiconductor substrate and the first output region for outputting the first portion of charges is formed in the semiconductor substrate.