Photo-detecting apparatus with low dark current
An optical sensing apparatus is provided. The optical sensing apparatus includes a semiconductor substrate composed of a first material; a transmitter-receiver set supported by the semiconductor substrate and including: (1) a photodetector includes an absorption region composed of a second material including germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal; and (2) a light source including a light-emitting region composed of a third material including germanium and configured to emit a light toward a target; wherein the absorption region includes at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate; wherein the first material is different from the second material and the third material.
1 . An optical sensing apparatus, comprising:
a semiconductor substrate composed of a first material, wherein the semiconductor substrate includes a planar surface; and
a transmitter-receiver set supported by the semiconductor substrate and comprising:
one or more photodetectors each comprising an absorption region composed of a second material comprising germanium formed in a first recess of the semiconductor substrate and configured to receive an optical signal reflected from a target outside of the optical sensing apparatus and to generate photo-carriers in response to the optical signal, wherein the one or more photodetectors are configured for sensing to detect information of the target; and
one or more light sources each comprising a light-emitting region composed of a third material comprising germanium formed in a second recess of the semiconductor substrate and configured to emit a light out of the optical sensing apparatus toward the target,
wherein the absorption region comprises at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate,
wherein the first material is different from the second material and the third material, wherein the one or more light sources are configured to emit the light at a direction that is out-of-plane from the planar surface of the semiconductor substrate towards the target outside of the optical sensing apparatus,
wherein the one or more photodetectors are configured to receive the optical signal at a direction that is out-of-plane from the planar surface of the semiconductor substrate from the target outside of the optical sensing apparatus,
wherein a first depth of the first recess is less than a second depth of the second recess, and
wherein the transmitter-receiver set comprises one or more buffer layers for adjusting a strain of the light-emitting region formed in the second recess prior to the light-emitting region formed in the second recess.
2 . The optical sensing apparatus of claim 1 , further comprising: an integrated circuit layer; and
a bonding layer between the integrated circuit layer and the transmitter-receiver set,
wherein the integrated circuit layer comprises an integrated circuit configured to control the light source and process the photo-carriers generated by the photodetector.
3 . The optical sensing apparatus of claim 1 , wherein the transmitter-receiver set comprises multiple light sources surrounding the photodetector.
4 . The optical sensing apparatus of claim 1 , wherein an area of the absorption region is different from an area of the light-emitting region.
5 . The optical sensing apparatus of claim 1 , wherein the photodetector comprises a one-dimensional array or a two-dimensional array of absorption regions.
6 . The optical sensing apparatus of claim 1 , wherein the first material comprises silicon, and wherein the second material and the third material comprise germanium.
7 . The optical sensing apparatus of claim 1 , wherein the light-emitting region is doped with an n-type dopant, and wherein the absorption region is doped with a p-type dopant.
8 . The optical sensing apparatus of claim 1 , wherein a first uppermost surface of the one or more photodetectors and a second uppermost surface of the one or more light sources are coplanar with the planar surface of the semiconductor substrate.
9 . An optical sensing apparatus, comprising:
a semiconductor substrate composed of a first material, wherein the semiconductor substrate includes a planar surface; and
a transmitter-receiver set supported by the semiconductor substrate and comprising:
one or more photodetectors each comprising:
an absorption region configured to receive an optical signal reflected from a target and configured to generate photo-carriers in response to the optical signal, wherein the absorption region is composed of a second material comprising germanium formed in a first recess of the semiconductor substrate and doped with a first dopant having a first conductivity type and a first peak doping concentration; and
a carrier guiding region formed in the semiconductor substrate and doped with a second dopant having a second conductivity type different from the first conductivity type and a second peak doping concentration, wherein the carrier guiding region is in contact with the absorption region to form at least one heterointerface, and
wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier guiding region is equal to or greater than 10; and
one or more light sources each comprising a light-emitting region composed of a third material comprising germanium formed in a second recess of the semiconductor substrate and configured to emit a light toward the target outside of the optical sensing apparatus,
wherein the first material is different from the second material and the third material,
wherein the one or more light sources are configured to emit the light at a direction that is out-of-plane from the planar surface of the semiconductor substrate towards the target outside of the optical sensing apparatus,
wherein the one or more photodetectors are configured to receive the optical signal at a direction that is out-of-plane from the planar surface of the semiconductor substrate from the target outside of the optical sensing apparatus,
wherein a first depth of the first recess is less than a second depth of the second recess, and
wherein the transmitter-receiver set comprises one or more buffer layers for adjusting a strain of the light-emitting region formed in the second recess prior to the light-emitting region formed in the second recess.
10 . The optical sensing apparatus of claim 9 , wherein the first conductivity type is p-type, and the light-emitting region is doped with an n-type dopant.
11 . The optical sensing apparatus of claim 9 , further comprising:
an integrated circuit layer; and
a bonding layer between the integrated circuit layer and the transmitter-receiver set,
wherein the integrated circuit layer comprises an integrated circuit configured to control the light source and process the photo-carriers generated by the photodetector.
12 . The optical sensing apparatus of claim 9 , wherein the transmitter-receiver set comprises multiple light sources surrounding the photodetector.
13 . The optical sensing apparatus of claim 9 , wherein an area of the absorption region is different from an area of the light-emitting region.
14 . The optical sensing apparatus of claim 9 , wherein the light-emitting region has a strain different from the strain of the absorption region.
15 . The optical sensing apparatus of claim 9 , wherein the photodetector comprises a one-dimensional array or a two-dimensional array of absorption regions.
16 . The optical sensing apparatus of claim 9 , wherein the first material comprises silicon, the second material and the third material comprise germanium.
17 . The optical sensing apparatus of claim 9 , wherein the photodetector is configured for proximity sensing or depth sensing.
18 . The optical sensing apparatus of claim 9 , wherein a first uppermost surface of the one or more photodetectors and a second uppermost surface of the one or more light sources are coplanar with the planar surface of the semiconductor substrate.