Semiconductor photodiode device and manufacturing method thereof
A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.
1. A semiconductor photodiode device comprising:
a semiconductor substrate;
a first conduction type first semiconductor layer formed above the semiconductor substrate;
a high resistance second semiconductor layer formed above the first semiconductor layer;
a first conduction type third semiconductor layer formed above the second semiconductor layer; and
a second conduction type fourth semiconductor layer buried in the second semiconductor layer,
wherein the fourth semiconductor layer has a plurality of parts, each of the parts being spaced from at least one other adjacent part of said plurality by a predetermined distance in a direction parallel to an upper surface of the semiconductor substrate.
2. The semiconductor photodiode device according to claim 1 , wherein the fourth semiconductor layer has a band-like stripe structure or a lattice-like periodical structure.
3. The semiconductor photodiode device of a surface photoreceiving type according to claim 2 , wherein said predetermined distance is one-half or less of a penetration length of light having a predetermined wavelength for optical communication.
4. The semiconductor photodiode device according to claim 3 , comprises a transistor having a current amplification function.
5. The semiconductor photodiode device according to claim 4 ,
wherein the transistor is a bipolar transistor,
wherein the semiconductor substrate comprises silicon,
wherein each of the first to the fourth semiconductor layers comprises single-crystal germanium or single-crystal silicon-germanium, and
wherein an emitter of the bipolar transistor comprises single-crystal silicon-germanium or single-crystal silicon.
6. The semiconductor photodiode device according to claim 5 , wherein the fourth semiconductor layer serves as a base of the bipolar transistor.
7. The semiconductor photodiode device according to claim 5 , wherein the first semiconductor layer serves as a base of the bipolar transistor.
8. The semiconductor photodiode device according to claim 2 , wherein said predetermined distance is one-half or less of a thickness of the second semiconductor layer.
9. A semiconductor photodiode device according to claim 8 , comprising a transistor having a current amplification function.
10. The semiconductor photodiode device according to claim 9 ,
wherein the transistor is a bipolar transistor,
wherein the semiconductor substrate comprises silicon,
wherein each of the first to the fourth semiconductor layers comprises single-crystal germanium or single-crystal silicon-germanium, and
wherein an emitter of the bipolar transistor comprises single-crystal silicon-germanium or single-crystal silicon.
11. The semiconductor photodiode device according to claim 10 , wherein the fourth semiconductor layer serves as a base of the bipolar transistor.
12. The semiconductor photodiode device according to claim 10 , wherein the first semiconductor layer serves as a base of the bipolar transistor.