Light-sensing device
A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are expitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The expitaxially grown layers for the photodiode devices may be either undoped or in-situ doped with profiles suitable for their respective operation. With appropriate choice of substrate materials, device layers and heterojunction engineering and process architecture, it is possible to fabricate silicon-based and germanium-based multi-spectral sensors that can deliver pixel density and cost of fabrication comparable to the state of the art CCDs and CMOS image sensors. The method can be implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, Thick-Film and Thin-Film Geranium-On-Insulator (GeOI).
1. A light-sensing device comprising a semiconductor substrate and photodiodes formed thereon, wherein the semiconductor substrate includes side-by-side active areas implanted therein and CMOS devices, said active areas having a defined polarity and said active areas being electrically isolated from one another and from the adjacent CMOS device by isolation regions, the photodiodes comprising photodiodes of a first type and of a second type, the photodiodes of the first and second types being formed in one single epitaxial growth step on said active areas.
2. A light-sensing device as claimed in claim 1 , wherein the substrate is made of a material selected from the group comprising Silicon Bulk substrates, or Thick-Film Silicon-On-Insulator (SOI), or Thin-Film Silicon-On-Insulator (SOI), or Germanium Bulk substrates, or Thick-Film Germanium (GeOI), or Thin-Film Germanium-On-Insulator (GeOI).
3. A light-sensing device as claimed in claim 1 , wherein the active areas are the bottom electrodes of epitaxially grown photodiodes.
4. A light-sensing device as claimed in claim 1 , wherein the surface of the active areas is corrugated.
5. A light-sensing device as claimed in claim 1 , wherein the epitaxially grown layers of the photodiodes are in contact with the side edges of the active areas underneath.
6. A light-sensing device as claimed in claim 1 , wherein the epitaxially grown layers of the photodiodes cover the top edges of the isolation areas placed between active areas.
7. A light-sensing device as claimed in claim 1 , wherein the bottom electrode and the epitaxial layers comprising a middle region and a top electrode, form devices operating in avalanche mode, such as Avalanche Photo-Diodes.
8. A light-sensing device comprising a semiconductor substrate and photodiodes formed thereon, wherein the semiconductor substrate includes side-by-side active areas implanted therein and CMOS devices, said active areas having a defined polarity and said active areas being electrically isolated from one another and from the adjacent CMOS device by isolation regions, the photodiodes comprising photodiodes of a first type and of a second type, the photodiodes of the first and second types being formed in one single epitaxial growth step on said active areas, wherein the photodiodes of the first type are grown on active areas having a predetermined first polarity and the photodiodes of the second type being grown on active areas having a second polarity that is opposite to said first polarity.
9. A light-sensing device as claimed in claim 8 , wherein the substrate is made of a material selected from the group comprising Silicon Bulk substrates, or Thick-Film Silicon-On-Insulator (SOI), or Thin-Film Silicon-On-Insulator (SOI), or Germanium Bulk substrates, or Thick-Film Germanium (GeOI), or Thin-Film Germanium-On-Insulator (GeOI).
10. A light-sensing device as claimed in claim 8 , wherein the active areas are the bottom electrodes of epitaxially grown photodiodes.
11. A light-sensing device as claimed in claim 8 , wherein the surface of the active areas is corrugated.
12. A light-sensing device as claimed in claim 8 , wherein the epitaxially grown layers of the photodiodes are in contact with the side edges of the active areas underneath.
13. A light-sensing device as claimed in claim 8 , wherein the epitaxially grown layers of the photodiodes cover the top edges of the isolation areas placed between active areas.
14. A light-sensing device as claimed in claim 8 ,wherein the bottom electrode and the epitaxial layers comprising a middle region and a top electrode, form devices operating in avalanche mode, such as Avalanche Photo-Diodes.