Semiconductor device and method for manufacturing the same
A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure.
1. A semiconductor device, comprising:
a III-V semiconductor substrate;
a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and
a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure, wherein
the crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure.
2. The semiconductor device according to claim 1 , wherein
a first conductivity type dopant concentration in the first adjusting layer is higher than a first conductivity type dopant concentration in the second adjusting layer.
3. The semiconductor device according to claim 2 , wherein
the first conductivity type dopant concentration in the first adjusting layer is 5 times or more of the first conductivity type dopant concentration in the second adjusting layer.
4. The semiconductor device according to claim 1 , wherein
a thickness of the first adjusting layer is ⅕ or less of a thickness of the second adjusting layer.
5. The semiconductor device according to claim 1 , wherein
a thickness of the first adjusting layer is not less than 10 nm but not more than 60 nm, and a thickness of the second adjusting layer is not less than 150 nm.
6. The semiconductor device according to claim 1 , further comprising a first conductivity side electrode, the first conductivity side electrode being in ohmic contact with the crystal-adjusting layer.
7. The semiconductor device according to claim 1 , further comprising a first conductivity side electrode, the first conductivity side electrode being in ohmic contact with a rear surface of the substrate.
8. The semiconductor device according to claim 1 , wherein
the substrate is any one of InP, GaSb, and GaAs, the multiple quantum well structure is a type II multiple quantum well structure, and each pair a/b is InGaAs/GaAsSb or InAs/GaSb.
9. The semiconductor device according to claim 1 , wherein
the substrate is InP, and the multiple quantum well structure is a type II InGaAs/GaAsSb multiple quantum well structure, and
in the crystal-adjusting layer, the first adjusting layer is InP, and the second adjusting layer is InGaAs.
10. The semiconductor device according to claim 1 , wherein
the semiconductor device is a photodiode including the multiple quantum well structure as an absorption layer.
11. An optical sensor device including the semiconductor device according to claim 10 , and a read-out circuit.
12. A method for manufacturing a semiconductor device by metal-organic vapor phase epitaxy, the method comprising the steps of:
growing a crystal-adjusting layer in contact with a III-V semiconductor substrate; and
growing a type II multiple quantum well structure including a plurality of pairs of a layer a and a layer b, in contact with the crystal-adjusting layer, wherein
the crystal-adjusting layer is composed of a first adjusting layer and a second adjusting layer,
the first adjusting layer is grown by using the same material as the substrate, so as to be in contact with the substrate,
the second adjusting layer is grown by using the same material as the layer a or the layer b, on the first adjusting layer so as to be in contact with a lower surface of the multiple quantum well structure, and
a first conductivity type dopant concentration in the first adjusting layer is higher than a first conductivity type dopant concentration in the second adjusting layer.
13. The method for manufacturing a semiconductor device according to claim 12 , wherein
in the step of growing the crystal-adjusting layer, a thickness of the first adjusting layer is ⅕ or less of a thickness of the second adjusting layer.
14. The method for manufacturing a semiconductor device according to claim 12 , further comprising a step of forming a first conductivity side electrode, wherein
the second adjusting layer is removed by using a selective etchant that etches the second adjusting layer but does not etch the first adjusting layer, and thereafter, the first conductivity side electrode is formed in contact with the first adjusting layer.