Time-of-flight detection pixel
A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.
1. A pixel, comprising:
a photodiode region having a first quadrilateral shape in a top view and including a charge collection area doped with a first conductivity type;
a first memory region having a second quadrilateral shape in the top view, said first memory region extending from the photodiode region from a first side of the first quadrilateral shape of the photodiode region, said first memory region including a first well more heavily doped with the first conductivity type than the charge collection area;
a first transfer transistor gate electrode extending over a first corner region of the first quadrilateral shape of the photodiode region between the charge collection area and the first memory region;
a second memory region having the second quadrilateral shape in the top view, said second memory region extending from the photodiode region from a second side of the first quadrilateral shape of the photodiode region, said second memory region including a second well more heavily doped with the first conductivity type than the charge collection area; and
a second transfer transistor gate electrode extending over a second corner region of the first quadrilateral shape of the photodiode region between the charge collection area and the second memory region,
wherein an insulated conductive electrode extends along at least a portion of each side of the first quadrilateral shape of the photodiode region.
2. The pixel of claim 1 , wherein the first quadrilateral shape is square and the second quadrilateral shape is rectangular.
3. The pixel of claim 1 , wherein the first and second sides are adjacent sides of the first quadrilateral shape and the first and second corner regions are adjacent corner regions of the first quadrilateral shape.
4. The pixel of claim 1 , wherein the first and second sides are opposite sides of the first quadrilateral shape and the first and second corner regions are opposite corner regions of the first quadrilateral shape.
5. The pixel of claim 1 , further comprising:
a first charge sense region including a first charge sense area more heavily doped with the first conductivity type than both the charge collection area and the first well;
a first sense transistor gate electrode extending between the first memory region and the first charge sense area;
a second charge sense region including a second charge sense area more heavily doped with the first conductivity type than both the charge collection area and the second well; and
a second sense transistor gate electrode extending between the second memory region and the second charge sense area.
6. The pixel of claim 5 , wherein the first memory region and the first charge sense region are aligned in a direction which extends perpendicular to the first side of the first quadrilateral shape of the photodiode region, and wherein the second memory region and the second charge sense region are aligned in a direction which extends perpendicular to the second side of the first quadrilateral shape of the photodiode region.
7. The pixel of claim 5 , wherein the first memory region and the first charge sense region are aligned in a direction which extends parallel to the first side of the first quadrilateral shape of the photodiode region, and wherein the second memory region and the second charge sense region are aligned in a direction which extends parallel to the second side of the first quadrilateral shape of the photodiode region.
8. The pixel of claim 5 , further comprising:
a semiconductor substrate of a second conductivity type;
a semiconductor layer of the first conductivity type;
wherein the charge collection area, the first charge sense area, the second charge sense area, the first memory area and the second memory area are all more heavily doped than the semiconductor layer; and
wherein the first and second sense transistor gate electrodes extend over portions of the semiconductor layer.
9. The pixel of claim 1 , further comprising:
a semiconductor substrate of a second conductivity type;
a semiconductor layer of the first conductivity type;
wherein the charge collection area, the first memory area and the second memory area all have depths which extend into the semiconductor substrate to a level below a bottom of the semiconductor layer; and
wherein the charge collection area, the first memory area and the second memory area are all more heavily doped than the semiconductor layer; and
wherein the first and second transfer transistor gate electrodes extend over portions of the semiconductor layer.
10. The pixel of claim 9 , wherein the photodiode region further includes an intermediate area positioned between the portion of the semiconductor layer and the first memory region, said intermediate area being more heavily doped than the portion of the semiconductor layer and less heavily doped than the first well, and said intermediate area being covered by the first transfer transistor gate electrode.
11. The pixel of claim 9 , wherein the memory region further includes an intermediate area positioned between the photodiode region and the first well, said first intermediate area being more heavily doped than the portion of the semiconductor layer and less heavily doped than the first well.
12. The pixel of claim 9 , wherein a doping level of the semiconductor substrate decreases as distance to the semiconductor layer decreases.
13. A pixel, comprising:
a photodiode region having a first quadrilateral shape in a top view and including a charge collection area doped with a first conductivity type;
a first memory region having a second quadrilateral shape in the top view, said first memory region extending from the photodiode region from a first side of the first quadrilateral shape of the photodiode region, said first memory region including a first well more heavily doped with the first conductivity type than the charge collection area;
a first transfer transistor gate electrode extending over a first corner region of the first quadrilateral shape of the photodiode region between the charge collection area and the first memory region;
a second memory region having the second quadrilateral shape in the top view, said second memory region extending from the photodiode region from a second side of the first quadrilateral shape of the photodiode region, said second memory region including a second well more heavily doped with the first conductivity type than the charge collection area; and
a second transfer transistor gate electrode extending over a second corner region of the first quadrilateral shape of the photodiode region between the charge collection area and the second memory region;
wherein each first and second well is laterally delimited by insulated conductive electrodes which extend parallel to and facing each other.
14. The pixel of claim 13 , wherein the insulated conductive electrodes extend perpendicular to sides of the first quadrilateral shape of the photodiode region.
15. The pixel of claim 13 , wherein the insulated conductive electrodes extend parallel to sides of the first quadrilateral shape of the photodiode region.
16. The pixel of claim 13 , wherein the first quadrilateral shape is square and the second quadrilateral shape is rectangular.
17. The pixel of claim 13 , wherein the first and second sides are adjacent sides of the first quadrilateral shape and the first and second corner regions are adjacent corner regions of the first quadrilateral shape.
18. The pixel of claim 13 , wherein the first and second sides are opposite sides of the first quadrilateral shape and the first and second corner regions are opposite corner regions of the first quadrilateral shape.
19. The pixel of claim 13 , further comprising:
a first charge sense region including a first charge sense area more heavily doped with the first conductivity type than both the charge collection area and the first well;
a first sense transistor gate electrode extending between the first memory region and the first charge sense area;
a second charge sense region including a second charge sense area more heavily doped with the first conductivity type than both the charge collection area and the second well; and
a second sense transistor gate electrode extending between the second memory region and the second charge sense area.
20. The pixel of claim 19 , wherein the first memory region and the first charge sense region are aligned in a direction which extends perpendicular to the first side of the first quadrilateral shape of the photodiode region, and wherein the second memory region and the second charge sense region are aligned in a direction which extends perpendicular to the second side of the first quadrilateral shape of the photodiode region.
21. The pixel of claim 19 , wherein the first memory region and the first charge sense region are aligned in a direction which extends parallel to the first side of the first quadrilateral shape of the photodiode region, and wherein the second memory region and the second charge sense region are aligned in a direction which extends parallel to the second side of the first quadrilateral shape of the photodiode region.
22. The pixel of claim 19 , further comprising:
a semiconductor substrate of a second conductivity type;
a semiconductor layer of the first conductivity type;
wherein the charge collection area, the first charge sense area, the second charge sense area, the first memory area and the second memory area are all more heavily doped than the semiconductor layer; and
wherein the first and second sense transistor gate electrodes extend over portions of the semiconductor layer.
23. The pixel of claim 13 , further comprising:
a semiconductor substrate of a second conductivity type;
a semiconductor layer of the first conductivity type;
wherein the charge collection area, the first memory area and the second memory area all have depths which extend into the semiconductor substrate to a level below a bottom of the semiconductor layer; and
wherein the charge collection area, the first memory area and the second memory area are all more heavily doped than the semiconductor layer; and
wherein the first and second transfer transistor gate electrodes extend over portions of the semiconductor layer.
24. The pixel of claim 23 , wherein the photodiode region further includes an intermediate area positioned between the portion of the semiconductor layer and the first memory region, said intermediate area being more heavily doped than the portion of the semiconductor layer and less heavily doped than the first well, and said intermediate area being covered by the first transfer transistor gate electrode.
25. The pixel of claim 23 , wherein the memory region further includes an intermediate area positioned between the photodiode region and the first well, said first intermediate area being more heavily doped than the portion of the semiconductor layer and less heavily doped than the first well.
26. The pixel of claim 23 , wherein a doping level of the semiconductor substrate decreases as distance to the semiconductor layer decreases.
27. The pixel of claim 13 , wherein the insulated conductive electrodes further extend along sides of the first quadrilateral shape of the photodiode region.
28. A pixel, comprising:
a semiconductor layer of a first conductivity type on a semiconductor substrate of a second conductivity type;
a photodiode region having a first quadrilateral shape in a top view and including a charge collection area doped with a first conductivity type;
a first memory region having a second quadrilateral shape in the top view, said first memory region extending from the photodiode region from a first side of the first quadrilateral shape of the photodiode region, said first memory region including a first well more heavily doped with the first conductivity type than the charge collection area;
a first transfer transistor gate electrode extending over a first corner region of the first quadrilateral shape of the photodiode region between the charge collection area and the first memory region;
a second memory region having the second quadrilateral shape in the top view, said second memory region extending from the photodiode region from a second side of the first quadrilateral shape of the photodiode region, said second memory region including a second well more heavily doped with the first conductivity type than the charge collection area; and
a second transfer transistor gate electrode extending over a second corner region of the first quadrilateral shape of the photodiode region between the charge collection area and the second memory region;
wherein the charge collection area, the first memory area and the second memory area all have depths which extend into the semiconductor substrate to a level below a bottom of the semiconductor layer;
wherein the charge collection area, the first memory area and the second memory area are all more heavily doped than the semiconductor layer; and
wherein the first and second transfer transistor gate electrodes extend over portions of the semiconductor layer.
29. The pixel of claim 28 , wherein the photodiode region further includes an intermediate area positioned between the portion of the semiconductor layer and the first memory region, said intermediate area being more heavily doped than the portion of the semiconductor layer and less heavily doped than the first well, and said intermediate area being covered by the first transfer transistor gate electrode.
30. The pixel of claim 28 , wherein the memory region further includes an intermediate area positioned between the photodiode region and the first well, said first intermediate area being more heavily doped than the portion of the semiconductor layer and less heavily doped than the first well.
31. The pixel of claim 28 , wherein a doping level of the semiconductor substrate decreases as distance to the semiconductor layer decreases.