High-speed light sensing apparatus
View Patent ↗An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
1. An optical apparatus comprising:
a semiconductor substrate;
a germanium-silicon layer supported by the semiconductor substrate, the germanium-silicon layer comprising a photodetection region configured to absorb photons and to generate photo-carriers in response to the absorbed photons;
one or more first switches each controlled by a first control signal, the one or more first switches each configured to collect at least a portion of the photo-carriers based on the first control signal; and
one or more second switches each controlled by a second control signal, the one or more second switches each configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal,
wherein each of the one or more first switches comprise:
a first p-doped region in the germanium-silicon layer, wherein the first p-doped region is controlled by the first control signal; and
a first n-doped region in the germanium-silicon layer, wherein the first n-doped region is coupled to a first readout integrated circuit;
wherein each of the one or more second switches comprise:
a second p-doped region in the germanium-silicon layer, wherein the second p-doped region is controlled by the second control signal; and
a second n-doped region in the germanium-silicon layer, wherein the second n-doped region is coupled to a second readout integrated circuit.
2. The optical apparatus of claim 1 ,
wherein the germanium-silicon layer comprises a third n-doped region and a fourth n-doped region,
wherein at least a portion of the first p-doped region overlaps with the third n-doped region, and
wherein at least a portion of the second p-doped region overlaps with the fourth n-doped region.
3. The optical apparatus of claim 1 ,
wherein the germanium-silicon layer comprises a third n-doped region,
wherein the third n-doped region overlaps with at least a portion of the first and the second p-doped regions.
4. The optical apparatus of claim 1 ,
wherein the semiconductor substrate comprises a third p-doped region and one or more additional n-doped regions,
wherein the germanium-silicon layer overlaps with the third p-doped region.
5. The optical apparatus of claim 1 , further comprising one or more electrical isolations on the germanium-silicon layer or on the semiconductor substrate, the electrical isolations being selected from the group consisting of: insulator isolations, implant isolations, and heterojunction isolations.
6. The optical apparatus of claim 1 ,
wherein the first control signal is a fixed bias voltage, and
wherein the second control signal is a variable bias voltage that is biased over the fixed voltage of the first control signal.
7. The optical apparatus of claim 1 , wherein the first control signal and the second control signal are differential to each other.
8. The optical apparatus of claim 1 , further comprising a metal layer and a dielectric layer arranged over the germanium-silicon layer to reflect an incident optical signal transmitted by the germanium-silicon layer back towards the germanium-silicon layer.
9. The optical apparatus of claim 1 , further comprising a time-of-flight system in electrical communication with the one or more first switches and the one or more second switches,
wherein, during operation, the time-of-flight system analyzes depth information or material composition of a three-dimensional target based on the portion of the photo-carriers collected by the one or more first switches and the portion of the photo-carriers collected by the one or more second switches in response to photons reflected from the three-dimensional target and then absorbed by the germanium-silicon layer.
10. An optical apparatus comprising:
a semiconductor substrate;
a germanium-silicon mesa supported by and in direct contact with the semiconductor substrate, the germanium-silicon mesa comprising a photodetection region configured to absorb photons and to generate photo-carriers in response to the absorbed photons;
one or more first switches each controlled by a first control signal, the one or more first switches each configured to collect at least a portion of the photo-carriers based on the first control signal; and
one or more second switches each controlled by a second control signal, the one or more second switches each configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal,
wherein the one or more first switches each comprise:
a first p-doped region in the germanium-silicon mesa, wherein the first p-doped region is controlled by the first control signal; and
a first n-doped region in the germanium-silicon mesa, wherein the first n-doped region is coupled to a first readout integrated circuit;
wherein the one or more second switches each comprise:
a second p-doped region in the germanium-silicon mesa, wherein the second p-doped region is controlled by the second control signal; and
a second n-doped region in the germanium-silicon mesa, wherein the second n-doped region is coupled to a second readout integrated circuit.
11. The optical apparatus of claim 10 ,
wherein the germanium-silicon mesa comprises a third n-doped region and a fourth n-doped region,
wherein at least a portion of the first p-doped region overlaps with the third n-doped region, and
wherein at least a portion of the second p-doped region overlaps with the fourth n-doped region.
12. The optical apparatus of claim 10 ,
wherein the germanium-silicon mesa comprises a third n-doped region,
wherein the third n-doped region overlaps with at least a portion of the first and the second p-doped regions.
13. The optical apparatus of claim 10 ,
wherein the semiconductor substrate comprises a third p-doped region and one or more additional n-doped regions,
wherein the germanium-silicon mesa overlaps with the third p-doped region.
14. The optical apparatus of claim 13 , wherein the third p-doped region is electrically shorted with the one or more additional n-doped regions.
15. An optical apparatus comprising:
a semiconductor substrate comprising a recessed portion;
a germanium-silicon mesa at least partially embedded in the recessed portion and in direct contact with the semiconductor substrate, the germanium-silicon mesa comprising a photodetection region configured to absorb photons and to generate photo-carriers in response to the absorbed photons;
one or more first switches each controlled by a first control signal, the one or more first switches each configured to collect at least a portion of the photo-carriers based on the first control signal; and
one or more second switches each controlled by a second control signal, the one or more second switches each configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal,
wherein the one or more first switches each comprise:
a first p-doped region in the germanium-silicon mesa, wherein the first p-doped region is controlled by the first control signal; and
a first n-doped region in the germanium-silicon mesa, wherein the first n-doped region is coupled to a first readout integrated circuit;
wherein the one or more second switches each comprise:
a second p-doped region in the germanium-silicon mesa, wherein the second p-doped region is controlled by the second control signal; and
a second n-doped region in the germanium-silicon mesa, wherein the second n-doped region is coupled to a second readout integrated circuit.
16. The optical apparatus of claim 15 ,
wherein the germanium-silicon mesa comprises a third n-doped region and a fourth n-doped region,
wherein at least a portion of the first p-doped region overlaps with the third n-doped region, and
wherein at least a portion of the second p-doped region overlaps with the fourth n-doped region.
17. The optical apparatus of claim 15 ,
wherein the germanium-silicon mesa comprises a third n-doped region,
wherein the third n-doped region overlaps with at least a portion of the first and the second p-doped regions.
18. The optical apparatus of claim 15 ,
wherein the semiconductor substrate comprises a third p-doped region and one or more additional n-doped regions,
wherein the germanium-silicon mesa overlaps with the third p-doped region.
19. The optical apparatus of claim 18 , wherein the third p-doped region is electrically shorted with the one or more additional n-doped regions.