Solid-state image sensor to reduce display unevenness of a captured image
It is an object of the present technology to provide a solid-state image sensor capable of reducing display unevenness of a captured image. A solid-state image sensor includes a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, an FD unit that is connected to the transfer gate unit, and an interlayer insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the FD unit. The solid-state image sensor further includes a second substrate that includes an amplifier transistor and is disposed to be adjacent to the interlayer insulating film, the amplifier transistor constituting a part of a pixel transistor connected to the FO unit via the interlayer insulating film and including a back gate unit.
1. A solid-state image sensor, comprising:
a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, a floating diffusion unit that is connected to the transfer gate unit, and an insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the floating diffusion unit; and
a second substrate that includes a first transistor which is adjacent to the insulating film, the first transistor constituting a part of a circuit connected to the floating diffusion unit via the insulating film and including a back gate, wherein
the first transistor includes a front gate connected to the back gate,
the back gate includes a back gate electrode and a back gate insulating film,
the front gate includes a front gate electrode and a front gate insulating film, and
the back gate insulating film and the front gate insulating film have different film types or different film structures.
2. The solid-state image sensor according to claim 1 , wherein the first transistor has a SOI structure.
3. The solid-state image sensor according to claim 1 , wherein
the back gate insulating film and the front gate insulating film have different film quality.
4. The solid-state image sensor according to claim 1 , wherein
the second substrate includes a switch unit connected to the back gate.
5. The solid-state image sensor according to claim 1 , further comprising
a third substrate which is adjacent to the second substrate, a comparator circuit on the third substrate, the comparator circuit including a transistor that includes a back gate and has a SOI structure.
6. The solid-state image sensor according to claim 1 , further comprising
a third substrate which is adjacent to the second substrate, a comparator circuit on the third substrate, the comparator circuit including a transistor that includes a back gate and has a bulk silicon structure.
7. The solid-state image sensor according to claim 1 , wherein
the second substrate includes
a second transistor constituting a part of the circuit, and
an interlayer insulating film between the first transistor and the second transistor.
8. The solid-state image sensor according to claim 7 , wherein
the second substrate includes a plurality of first transistors, and
a plurality of front gates is connectable to each other in at least a part of the plurality of first transistors.
9. The solid-state image sensor according to claim 1 , wherein
the first substrate includes a plurality of photoelectric conversion units and a plurality of transfer gate units.