High-speed light sensing apparatus
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
1. An optical apparatus, comprising:
a silicon substrate that includes an n-doped region; and
multiple pixels supported by the silicon substrate, each pixel of the multiple pixels comprising an absorption region comprising germanium, the absorption region comprising a p-doped region,
wherein the absorption region is configured to absorb photons reflected from a three-dimensional object and to generate photo-carriers in response to the absorbed photons, and
wherein each pixel of the multiple pixels is configured such that at least one of the photons reflected from the three-dimensional object is transmitted through the silicon substrate into the absorption region.
2. The optical apparatus of claim 1 , wherein the absorption region is formed on a planar surface of the silicon substrate.
3. The optical apparatus of claim 1 , wherein the absorption region is formed in a trench at least partially surrounded by an insulator or a semiconductor material.
4. The optical apparatus of claim 1 , further comprising a processing unit configured to process the photo-carriers.
5. The optical apparatus of claim 4 , wherein the processing unit is configured to determine a material composition of the three-dimensional object.
6. The optical apparatus of claim 4 , wherein the processing unit is configured to determine depth information of the three-dimensional object.
7. The optical apparatus of claim 4 , wherein the processing unit is configured to perform an eye-tracking application associated with the three-dimensional object.
8. The optical apparatus of claim 4 , wherein the processing unit is configured to perform a gesture recognition application associated with the three-dimensional object.
9. The optical apparatus of claim 4 , wherein the processing unit is configured to perform an augmented reality or a virtual reality application associated with the three-dimensional object.
10. The optical apparatus of claim 4 , wherein the processing unit comprises control circuitry or one or more processors.
11. The optical apparatus of claim 1 , further comprising a transmitter unit that includes one or more light sources.
12. The optical apparatus of claim 11 , wherein the one or more light sources comprise one or more NIR LEDs or lasers.
13. The optical apparatus of claim 1 , wherein each pixel of the multiple pixels further comprises one or more first switches each controlled by a first control signal, the one or more first switches each configured to collect at least a first portion of the photo-carriers based on the first control signal.
14. The optical apparatus of claim 13 , wherein each pixel of the multiple pixels further comprises one or more second switches each controlled by a second control signal, the one or more second switches each configured to collect at least a second portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
15. The optical apparatus of claim 1 , further comprising a second substrate bonded to the silicon substrate.
16. The optical apparatus of claim 15 , wherein the second substrate includes circuitry for processing the photo-carriers.
17. The optical apparatus of claim 1 , further comprising one or more optical components formed on the silicon substrate, the one or more optical components being configured to focus, collimate, defocus, filter, or otherwise manipulate light reflected from the three-dimensional object prior to reaching the multiple pixels.
18. The optical apparatus of claim 1 , further comprising isolation structures separating different pixels of the multiple pixels, wherein the isolation structures comprise an insulator isolation or an implant isolation.
19. An optical apparatus comprising:
a silicon substrate that includes multiple isolation structures; and
multiple pixels supported by the silicon substrate, each pixel of the multiple pixels comprising an absorption region comprising germanium,
wherein different pixels of the multiple pixels are separated by the multiple isolation structures,
wherein the absorption region is configured to absorb photons reflected from a three-dimensional object and to generate photo-carriers in response to the absorbed photons, and
wherein each of the multiple pixels is configured such that at least one of the photons reflected from the three-dimensional object are transmitted through the silicon substrate into the absorption region.